• 공업화학
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• 제18권4호
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• pp.350-355
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• 2007

천연망간광석을 이용한 질소산화물의 선택적촉매환원 반응에서 배가스 내에 포함된 수분의 영향을 연구하였다. 실험은 천연망간광석 촉매상에서 NO와 $NH_3$의 반응을 독립 또는 동시에 반응시켰다. 천연망간광석 촉매의 격자산소를 통하여 저온에서 $NH_3$가 산화될 수 있으며, $NH_3$의 산화로 인하여 생긴 NO 및 $NO_2$의 농도는 수분이 없을 때보다 수분이 존재할 때에 $300^{\circ}C$ 이상 고온에서 더 높게 나타났다. 수분은 천연망간광석 촉매상에서 NO 및 $NH_3$와 경쟁흡착하며, 이것은 고온 및 저온에서의 선택적촉매환원 반응을 저해하는 요인으로 작용할 수 있다. 촉매제조시 dipping한 수분도 $NH_3$와 경쟁흡착을 하여 $250^{\circ}C$ 이하에서 NOx 전환율이 감소하였다. NMO는 소성온도별로 활성특성이 달라지고 수분의 유무에 관계없이 $400^{\circ}C$의 최적소성온도를 갖는다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.207-207
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• 2011

Amorphous transparent oxide semiconductors (a-TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). Recently, Nomura et al. demonstrated high performance amorphous IGZO (In-Ga-Zn-O) TFTs.1 Despite the amorphous structure, due to the conduction band minimum (CBM) that made of spherically extended s-orbitals of the constituent metals, an a-IGZO TFT shows high mobility.2,3 But IGZO films contain high cost rare metals. Therefore, we need to investigate the alternatives. Because Aluminum has a high bond enthalpy with oxygen atom and Alumina has a high lattice energy, we try to replace Gallium with Aluminum that is high reserve low cost material. In this study, we focused on the electrical properties of IZO:Al thin films as a channel layer of TFTs. IZO:Al were deposited on unheated non-alkali glass substrates (5 cm ${\times}$ 5 cm) by magnetron co-sputtering system with two cathodes equipped with IZO target and Al target, respectively. The sintered ceramic IZO disc (3 inch ${\phi}$, 5 mm t) and metal Al target (3 inch ${\phi}$, 5 mm t) are used for deposition. The O2 gas was used as the reactive gas to control carrier concentration and mobility. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of IZO:Al thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Bulletin of the Korean Chemical Society
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• 제34권11호
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• pp.3387-3390
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• 2013

Catalytic gasification of mandarin waste residue was carried out using direct and indirect catalyst-contact methods for the first time. In the indirect method, non-catalytic reaction in a reactor was followed by catalytic upgrading of vapor product in another reactor. Two different catalysts, $Ni/{\gamma}-Al_2O_3$ and $Ni/CeO_2-ZrO_2$, were employed. $CeO_2-ZrO_2$ support was prepared using hydrothermal synthesis in supercritical water. The catalysts were characterized by $H_2$-temperature programmed reduction and Brunauer-Emmett-Teller analyses. Under the condition of equivalent ratio (ER) = 0, the indirect catalyst-contact method led to a higher gas yield than the direct method. Under ER = 0.2, the yield of biogas obtained over $Ni/CeO_2-ZrO_2$ was higher than that obtained over $Ni/{\gamma}-Al_2O_3$. Also, the coke formation of $Ni/CeO_2-ZrO_2$ was lower than that of $Ni/{\gamma}-Al_2O_3$. Such results were attributed to the higher reducibility and better lattice oxygen mobility of $Ni/CeO_2-ZrO_2$, which were advantageous for partial oxidation reaction.

• Nuclear Engineering and Technology
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• 제52권11호
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• 대한환경공학회지
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• 제27권5호
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• pp.513-518
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• 2005

망간 산화물 촉매, 망간-세륨 산화물 촉매에서 톨루엔의 촉매 산화에 대하여 조사 하였다. XRD, TGA, 톨루엔-TPR 분석을 통해 촉매의 특성을 조사하였다. 톨루엔 산화반응에 있어서 망간 18.2 wt.% 세륨 10.0 wt.%이 적절한 비율인 것으로 나타났다. 그리고 세리아가 망간 산화물에서의 활성을 증진 시키는 것으로 보여진다. XRD결과 $MnO_2$가 황성 자리인 것으로 추측된다. TGA 톨루엔-TPR결과 세리아가 격자 산소의 이동성, 활성자리의 적절한 상화 상태, 저온에서의 환원능력 및 활성자리의 재산화 능력을 증진시키는 것으로 사료된다.

• Bulletin of the Korean Chemical Society
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• 제32권1호
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• pp.49-52
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• 2011

A dinuclear copper(II) complex of [$Cu_2(aceace)_4$(dipyph)] [aceace = acetylacetone, dipyph = 1,4-di(4-pyridylethene-2-yl-)benzene] has been synthesized and characterized by elemental analysis, IR and X-ray single crystal diffraction. It crystallizes in the monoclinic system, space group P21/c, with lattice parameters a = 7.9584(16) $\AA$, b = 18.594(4) $\AA$, c = 15.063(4) $\AA$ $\beta=120.97(2)^o$ and $M_r$ = 807.85 ($C_{40}H_{44}Cu_2N_2O_8$), Z = 2. Each of the $Cu^{2+}$ ion adopts a square pyramid geometry and coordinates with four oxygen atoms from two aceace ligands and one nitrogen atom from dipyph bidentate ligand. Magnetic measurement shows that the Weiss constant and Curie constant for the title compound are -0.22 K and 0.1154 emu K/mol, respectively. Thermal stability data indicate that the title complex undergoes two steps decomposition and the residue is $Cu_2O_4$. In the potential range of -1.5 ~ 0.8 V, the title complex represents an irreversible electrochemical process.

• 한국자기학회지
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• 제15권1호
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• pp.21-24
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• 2005

강자성, 초거대자기저항체인 $La_{0.67}Sr_{0.33}MnO_{3}$ 타겟을 이용하여 248nm의 파장을 갖는 KrF 엑시머 레이저를 사용한 PLD법으로 박막으 제작하고, 강유전체 물질인 $PbZr_{0.52}Ti_{0.48}O_{3}$ 물질을 spin coating 방법으로 제조하였다. Pt 기관(111)위에 125 mtorr의 산소분압으로 증착한 rhombohedral 구조를 갖는 LSMO 박막을 증착하고 그 위에 PZT 물질을 증착한 결과 LSMO, PZT en 물질 모두 단일상으로 [111]방향으로서의 성장하였음을 알 수 있었다. AFM(atomic force micrscope) data 및 SEM(scanning electron microscope) data를 바탕으로 매우 균질한 박막을 얻었음을 알 수 있었으며, 이때의 자기적 성질 및 전기적 성질은 각각 강자성적인 성질 및 강유전체적인 성향을 나타내었다. 이러한 결과를 가지고 박막증착에 있어서 서로간의 결정구조가 미치는 영향과 다른 경향에 대한 조절이 가능함을 알 수 있었다.

• 한국세라믹학회지
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• 제48권5호
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• pp.368-372
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• 2011

Aluminum nitride (AlN) has excellent thermal conductivity, whereas it has some disadvantage such as low sinterability. In this study, the effects of sintering additive content and sintering condition on thermal conductivity of pressureless sintered AlN ceramics were examined on the variables of 1~3 wt% sintering additive ($Y_2O_3$) content at $1900^{\circ}C$ in $N_2$ atmosphere with holding time of 2~10 h. All AlN specimens showed higher thermal conductivity as the $Y_2O_3$ content and holding time increase. The formation of secondary phases (yttrium aluminates) by reaction of $Y_2O_3$ and $Al_2O_3$ from AlN surface promoted the thermal conductivity of AlN specimens, because the secondary phases could reduce the oxygen contents in AlN lattice. Also, thermal conductivity was increased by long sintering time because of the uniform distribution and the elimination of the secondary phases at the grain boundary by the evaporation effect during long holding time. A carbothermal reduction reaction was also affected on the thermal conductivity. The thermal conductivity of AlN specimens sintered at $1900^{\circ}C$ for 10 h showed 130~200W/mK according to the content of sintering additive.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1122-1127
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• 1998

Group II-AF_2$films such as $CaF_2$, $SrF_2$, and $BaF_2$ have been commonly used many practical applications such as silicon on insulatro(SOI), three-dimensional integrated circuits, buffer layers, and gate dielectrics in filed effect transistor. This paper presents electrical and structural properties of fluoride films as a gate dielectric layer. Conventional gate dielectric materials of TFTs like oxide group exhibited problems on high interface trap charge density($D_it$), and interface state incorporation with O-H bond created by mobile hydrogen and oxygen atoms. To overcome such problems in conventional gate insulators, we have investigated $CaF_2$ films on Si substrates. Fluoride films were deposited using a high vacuum evaporation method on the Si and glass substrate. $CaF_2$ films were preferentially grown in (200) plane direction at room temperature. We were able to achieve a minimum lattice mismatch of 0.74% between Si and $CaF_2$ films. Average roughness of $CaF_2$ films was decreased from 54.1 ${\AA}$ to 8.40 ${\AA}$ as temperature increased form RT and $300^{\circ}C$. Well fabricated MIM device showed breakdown electric field of 1.27 MV/cm and low leakage current of $10^{-10}$ A/$cm^2$. Interface trap charge density between $CaF_2$ film and Si substrate was as low as $1.8{\times}10^{11}cm^{-2}eV^{-1}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.56-59
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• 2004

HgTe and HgTe/CdTe core-shell structured nanocrystals(NCs) were synthesized in aqueous solution by colloidal method. HgTe and HgTe/CdTe NCs structure showed very similar XRD patterns because of the same lattice constant and crystal structure of both samples. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe NCs revealed the strong exitonic peak in the IR region. The PL spectrum of HgTe/CdTe NCs have the intense peak in about 700nm shorter than that of HgTe by 400nm. The photocurrent measurement of colloidal NCs are performed using He-Ne laser for light source. The photocurrent of HgTe NCs shows the instant increased current response to light, but HgTe/CdTe NCs revealed a decreased current when lighted to the sample. In the vacuum condition, it shows reverse result that current increased under the illumination of light and it is thought that the molecules like the hydro-oxygen gas in the air give an important effect on the current mechanism.