• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.307-307
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• 2012

In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16 sccm, O2: 24 sccm). Micro-structure of Al-doped MgOx films and atomic concentration were investigated by XRD and XPS, respectively. The Al-doped MgOx films showed set/reset resistance switching behavior at various Al doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased with decreasing thickness of Al-doped MgOx films. Besides, the initial current of Al-doped MgOx films is increased with increasing Al doping concentration in MgOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen of Al-doped MgOx.

• 전기의세계
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• 제30권7호
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• pp.441-447
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• 1981

As a preceeding work for the study on dielectric characterstics of a kind of low density polyethylene introduced morphological change by mechanical method, glass transition temperature which is regarded as a macroscopic aspect for relaxation of molecular chain segments has been observed by means of temperature dependent dilatometric measurement. The origina specimen clearly shows two knees which correspond to two peaks (.gamma. and .betha. peak) in the intenal friction measurement, suggesting the existence of separated glass transition temperatures at 150.deg.k and 260.deg.k respectively. On the specimen irradiated to 100 Mrad both glass transition temperatures tend to shift towards high temperature sides because of crosslinking by irradiation. furthemore an evidence can be seen that radiation effect, even in amorphous phase, is also slelctive depending on slight morphological differences. The specimen extended to four times in length shows a peculiar nature such as negative linear thermal expansion coefficient increasing with temperature between 220.deg.k and ambient temperature and that this fact is interpreted by considering that c axis of the lattice aligns along the extended direction by drawing, further c axis inherently possesses the characteristics of negative linear thermal expansion coefficient. For the observations that the relatively small positive linear expansion on the specimen extended to ca. two times as well as the part below 220.deg.k of the specimen extended to four times, it is considered for the reason of the facts that the incompletely oriented region indicated as the middle part of Peterlin's model tends to restore partially to orginal arrangement-a kind of phase transition-as increasing with temperature.

• 한국세라믹학회지
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• 제40권5호
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• pp.405-409
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• 2003

The effect of substitution of Gd ions for Ca ions in the B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$(C $a_{1-x}$ G $d_{x}$)$_{2.03}$ C $u_{3.06}$ $O_{ 10+{\delta}}$/ (x=0.0~0.06) was investigated by measuring x-ray diffraction patterns, lattice constants, do resistivity and Hall effect. We found the solubility limit of Gd in the 110 K phase to be x < 0.015. Within the solubility limit, the c-axis seemed to decrease with increasing x. In the region of the 110 K single phase, the critical temperature $T_{c}$ gradually decreased with an increasing the Gd concentration x, corresponding to a small change of the carrier concentration.

• 한국재료학회지
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• 제13권1호
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• pp.48-52
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• 2003

The substituted yttrium iron garnet systems $Y_{ 3-x}$/Gd$_{x}$X$0.2_{0.2}$ $Fe_{4.8}$ $O _{12}$ (x = 0.2, 0.4, 0.6) have been investigated by means of X-ray diffraction, Mossbauer spectroscopy and SQUID. The X-ray diffraction patterns at room temperature confirm the samples to have a single phase of the garnet structure over the whole composition range. The lattice constants of all the samples linearly change with increasing x due to the size of substituted ions in the dodecahedral sites. $Y_{3-x}$ $Gd_{x}$ X$Fe_{4.8}$ $In_{0.2}$ $O_{12}$ system which $Y_{3-x}$ ions are substituted with Gd$^{ 3＋}$ ions, the Mossbauer spectrum consists of three Zeeman sextets at room temperature, one due to the $Fe^{3＋}$ ions on the octahedral(a-) sites and the others due to the $Fe^{3＋}$ ions on the tetrahedral(d-, d'-) sites, respectively. From the hysteresis loop measured by means of SQUID over the whole composition range, the saturation magnetization $M_{s}$ and magnetic moments $\mu_{ B}$ per unit cell have been obtained. The increment of Gd-ion content causes $M_{s}$ and $\mu_{B}$ decrease while the increment of In-ion content does not.

• 전기학회논문지
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• 제57권1호
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• pp.92-97
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• 2008

This is a research to apply 1310nm single-mode optical fiber to a temperature sensor. The existing study of optical fiber sensor is complicated because it was made with various equipment. To vary scattering, the variation of optical frequency is measured by using Bragg(lattice) or pulse generator and also bulk system is created by YAG laser but there were some difficulties creating experimental environment and it was a problem that the stability of measured data was low. The temperature sensor system using the suggested sBs(stimulated Brillouin scattering:sBs) from this research is much more simplified straight-line system. To improve the trust and accuracy of noises from optical frequency and unclear results, it was analysed by using Neuro-Fuzzy algorithm. we tried to get more correct data than existing system. sBs measure that optical frequency changed due to the variation of temperature. The analyzed change rate of outcome by Fuzzy theory is 1.1 MHz.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.618-618
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• 2013

Graphene is only one atom thick planar sheet of sp2-bonded carbon atoms arranged in a honeycomb crystal lattice, which has flexible and transparent characteristics with extremely high mobility. These noteworthy properties of graphene have given various applicable opportunities as electrode and/or channel for various flexible devices via suitable physical and chemical modifications. In this work, for the development of all-graphene devices, we performed to synthesize alternately patterned structure of mono- and multi-layer graphene by using the patterned Ni film on Cu foil, having much different carbon solid solubilities. Depending on the process temperature, Ni film thickness, introducing occasion of methane and gas ratio of CH4/H2, the thickness and width of the multi-layer graphene were considerably changed, while the formation of monolayer graphene on just Cu foil was not seriously influenced. Based on the alternately patterned structure of mono- and multi-layer graphene as a channel and electrode, respectively, the flexible TFT (thin film transistor) on SiO2/Si substrate was fabricated by simple transfer and O2 plasma etching process, and the I-V characteristics were measured. As comparing the change of resistance for bending radius and the stability for a various number of repeated bending, we could confirm that multi-layer graphene electrode is better than Au/Ti electrode for flexible applications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.163-164
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• 2008

Chalcogenide glass has been known for many photo induced phenomena and superial electron / optical specific by structure flexibility, unique electronic configuration. It is become known to the greatest specific as photonic material medium that possible to perfect controlling by continuity and photo inducing direction of amorphous chalcogenide. In our experiment, we choose the amorphous As-Ge-Se-S and corning glass as a substrate. And then we have evaporated in the ${\sim}2{\times}10^{-6}$ Torr using a E-beam evaporator, completed thin film sample that have 1um thickness of As-Ge-Se-S in $600{\AA}$, $10{\sim}5{\AA}/s$. At first, we let the change the angle between laser and sample by holography litho method and then, expect that satisfied conclusion which 2-dimension diffraction lattice manufacture and specifics by investing a He-Ne laser for 2000 seconds.

• 한국수소및신에너지학회논문집
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• 제14권4호
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• pp.298-304
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• 2003

The thermal behavior of $NiFe_2O_4$ prepared by a solid-state reaction was investigated for $H_2$ generation by the thermochemical cycle. The reduction of $NiFe_2O_4$ started from $800^{\circ}C$, and the weight loss was 0.2-0.3 wt% up to $1000^{\circ}C$. In the $H_2O$ decomposition reaction, $H_2$ was generated by oxidation of reduced $NiFe_2O_4$. The crystal structure of $NiFe_2O_4$ maintained during the redox reaction of 5 cycles. From this observation, the lattice oxygen in $NiFe_2O_4$ is released without the structural change during the thermal reduction and oxygen deficient $NiFe_2O_4$ can be restored to the spinel structure of $NiFe_2O_4$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.768-771
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• 2004

Pb0.5,Sr0.5TiO3(PST) thin films were deposited on Si with MgO (100) buffer layer by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. For the MgO/Si buffer layer, the PST thin films exhibited highly (100) orientation. The MgO buffer layer affects the stress state of the (100)-oriented PST thin films. The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the MgO/Si substrates measured at 10 kHz were 822, 0.025, and 80.1%, respectively.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.245-249
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• 2010

Two dimensional(2D) pair-photonic crystals (pair-PCs) have been fabricated by a multiple-exposure nanosphere lithography (MENSL) method using the self-assembled nanospheres as lens-mask patterns and the collimated laser beam as a multiple-exposing source. The arrays of the 2D pair-PCs exhibited variable lattice structures and shape the control of rotating angle (${\Theta}$), tilting angle (${\gamma}$) and the exposure conditions. In addition, the base period or filling factor of pair-PCs as well as their shapes could be changed by experimental conditions and nanosphere size. A 1.18-${\mu}m$-thick resist was spincoated on Si substrate and the multiple exposure was carried out at change of ${\gamma}$ and ${\Theta}$. Images of prepared 2D pair-PCs were observed by SEM. We believe that the MENSL method is a suitable useful tool to realize the pair-periodic arrays of large area.