• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1585-1587
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• 2004

이중 에피층 구조를 가지는 SOI(Silicon-On-Insulator) LIGBT(Lateral Insulated Gate Bipolar Transistor)의 에피층 두께 변화에 따른 항복전압 특성을 분석하였다. 제안된 소자는 전하보상효과를 얻기 위해 n/p-epi의 이중 에피층 구조를 사용하였으며, 에피층 전체에 걸쳐서 전류가 흐를 수 있도록 하기 위해 trenched anode구조를 채택하였다. 본 논문에서는 n/p-epi층의 농도를 고정시킨 후 각각의 epi층의 두께를 변화시켜가며 simulation을 수행하였을 때 항복전압의 변화 및 표면과 epi층에서의 전계분포변화를 분석하였다.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.129-132
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• 2004

The electrothermal characteristics of a high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) using thin silicon on insulator (SOI) and silicon on sapphire (SOS) such as thermal conductivity and sink is analyzed by MEDICI. The device simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for modeling of the thermal behavior of SOI devices. In this paper we simulated the thermal conductivity and temperature distribution of a SOI LIGBT with an insulator layer of SiO$_2$ and $Al_2$O$_3$ at before and after latch-up and verified that the SOI LIGBT with the $Al_2$O$_3$ insulator had good thermal conductivity and reliability.

• Proceedings of the KIEE Conference
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• 2000.11a
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• pp.250-255
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• 2000

본 "수소 플라즈마를 이용한 SOI 기판 제작 및 SOI 전력용 반도체 소자 제작에 관한 연구"를 통해 수소플라즈마 전처리 공정에 의한 실리콘 기판 표면의 활성화를 통해 실리콘 직접 접합 공정을 수행하여 접합된 기판쌍을 제작할 수 있었으며, 접합된 기판쌍에 대한 CMP(Chemical Mechanical Polishing) 공정을 통해 SOI(Silicon on Insulator) 기판을 제작할 수 있었다. 아울러, 소자의 동작 시뮬레이션을 통해 기존 SOI LIGBT(Lateral Insulated Gate Bipolar Transistor) 소자에 비해 동작 특성이 향상된 이중 채널 SOI LIGBT 소자의 설계 파라미터를 도출하였으며, 공정 시뮬레이션을 통해 소자 제작 공정 조건을 확립하였고, 마스크 설계 및 소자 제작을 통해 본 연구 수행으로 개발된 SOI 기판의 전력용 반도체 소자 제작에 대한 가능성을 확인할 수 있었다.

• 한국컴퓨터산업교육학회:학술대회논문집
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• 2003.11a
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• pp.79-82
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2$ and $Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.120-124
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• 2000

In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.163-166
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• 2003

The electrothermal simulation of high voltage LIGBT(Lateral Insulated Gate Bipolar Transistor) in thin Silicon on insulator (SOI) and Silicon on sapphire (SOS) for thermal conductivity and sink is performed by means of MEDICI. The finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on-insulator (SOI) devices. In this paper, using for SOI LIGBT, we simulated electrothermal for device that insulator layer with $SiO_2\;and\;Al_2O_3$ at before and after latch up to measured the thermal conductivity and temperature distribution of whole device and verified that SOI LIGBT with $Al_2O_3$ insulator had good thermal conductivity and reliability

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.338-341
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• 2002

A new small size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed and fabricated to improve the characteristics of device. The entire electrode of LTEIGBT is placed to trench type electrode. The LTEIGBT is designed so that the width of device is 19$\mu\textrm{m}$. The latch-up current density of the proposed LTEIGBT is improved by 10 and 2 times with those of the conventional LIGET and LTIGBT The forward blocking voltage of the LTEIGBT is 130V. At the same size, those of conventional LIGBT and LTIGBT are 60V and 100V, respectively. Because that the electrodes of the proposed device is formed of trench type, the electric field in the device are crowded to trench oxide. We fabricated He proposed LTEIGBT after the device and process simulation was finished. When the gate voltage is applied 12V, the forward conduction currents of the proposed LTEIGBT and the conventional LIGBT are 80mA and 70mA, respectively, at the same breakdown voltage of 150V,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.267-270
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.546-550
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• 2001

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.

• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.