• Title/Summary/Keyword: laser etching

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Effect of corrugation structure and shape on the mechanical stiffness of the diaphragm

  • Kim, Junsoo;Moon, Wonkyu
    • Journal of Sensor Science and Technology
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    • v.30 no.5
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    • pp.273-278
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    • 2021
  • Here, we studied the change in the mechanical stiffness of a diaphragm according to the corrugation pattern. The diaphragm consists of a silicon oxide and nitride double layer; a corrugation pattern was formed by dry etching, and the diaphragm was released by wet etching. The fabrication of the thin film was verified using focused ion beam and scanning electron microscopy images. The mechanical stiffness of the diaphragm was obtained by measuring the surface vibration using a laser Doppler vibrometer while applying external sound pressure. Flat squares, diaphragms with square corrugations, and circular corrugation patterns were measured and compared. The stiffness of the diaphragm with a corrugation structure was found to be smaller than that without a corrugation structure; in particular, circular corrugation showed a better effect because of the high symmetry. Furthermore, the effect of corrugation was theoretically predicted. The proposed corrugated diaphragm showed comparable flexibility with the state-of-the-art MEMS microphone diaphragm.

CW Operation of $1.3{$mu}$ GaInAsP/p-InP BH Lasers at Room Temperature ($1.3{$mu}$ GaInAs P/p-InP BH형 레이저의 상온 연속발진)

  • Yoo, Tae Kyung;Chung, Gi Oong;Kwon, Young Se;Hong, Tchang Hee
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.780-788
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    • 1986
  • 1.3\ulcorner GaInAsP BH(Buried Heterostructure) lasers were fabricated on the p-InP substrate. Two step chemical etching processes and melt-back etching technique during 2nd epitaxy were used for BH active layer. BH laser had the threshold current, Ith, of 72mA(23\ulcorner), peak wavelength of 1.2937\ulcorner, nd of 10-20%, and To of 85K. They operated in single mode under pulse condition up to 1.4 Ith. CW(DC) operation was successfully performed at room temperature.

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Fabrication of Superconducting Narrow Bandpass Filters with Parallel Microstrip Line (마이크로스트립 평행결합선을 이용한 초전도 협대역 필터의 제작)

  • Park, Joo-Hyung;Lee, Sang-Yeol;Yoon, Hyung-Kuk;Yoon, Young-Joong
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1549-1551
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    • 1998
  • We have designed and developed narrow bandpass multipole filters for satellite communication using $YBa_2Cu_3O_{7-x}$(YBCO) thin films on MgO substrates. The superconducting film used in this study was prepared by laser ablation on one side polished MgO (100) substrates. A Nd:YAG laser was used to fabricate YBCO thin films. The wave length of the laser was 355 nm. The laser beam was focused onto a YBCO target rotating linearly to avoid deep craters that may eject macroscopic YBCO particles. The YBCO films were grown at $750^{\circ}C$ in the oxygen partial pressure of 200 mTorr. The deposited YBCO thin films were patterned by conventional wet-etching method. The transition temperatures of YBCO thin films were 85 - 88 K and the film thicknesses were about 5,000 $\AA$. By comparing the performances of normal-metal filters and YBCO filters, we observed that superconducting YBCO multipole filters have been showed superior performances at 77 K.

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Fabrication and Analysis of Characteristics of PRT using High-fine Laser Trimming Technology (고정밀 레이저 가공 기술을 이용한 PRT 제작 및 특성 분석)

  • 노상수;서정환;정귀상;김광호
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.1
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    • pp.46-52
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    • 2003
  • In this paper, we fabricated PRT(platinum resistance thermometers) with the trimming technology using high fine laser system. U. V.(wavelength: 355nm) laser was mainly used for adjusting Pt thin films resistors to 100Ω at 0$^{\circ}C$. Internationally, the accepted A-class tolerance of temperature sensor is ${\pm}$0.06Ω at 0$^{\circ}C$. according to DIN EN 60751. The width of trimmed lines was about 10$\mu\textrm{m}$ and the best trimming conditions of Pt thin films were power : 37mW, frequency : 200Hz and bite size:1.5$\mu\textrm{m}$. And 96 resistors, fabricated by photolithography and etching process, have 79∼90Ω and 91∼102Ω as the proportion of 45.7% and 57.3%, respectively. As result of sitting Pt thin films resistors to the target value(109.73Ω at 25$^{\circ}C$), 82.3% of all resistors had the tolerance within ${\pm}$0.03Ω and the others(17.7%) were within ${\pm}$0.06Ω of A-class tolerance. The PRTs which wore fabricated in this research had excellent characteristics as follows; high accuracy, international standard TCR(temperature coefficient of resistance) value, long-term stability, wide temperature range, good linearity and repeatability, rapid response time, etc.

Advanced surface processing of NLO borate crystals for UV generation

  • Mori, Yusuke;Kamimur, Tomosumi;Yoshimura, Masashi;Sasaki, Takatomo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.5
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    • pp.459-462
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    • 1999
  • Recent advances in NLO Borate Crystals for UV Generation are reviewed with the particular emphasis on the technique to improve the life time of UV optics. The laser-damage resistance of CLBO and fused silica surfaces was successfully improved after removing polishing compound by ion beam etching. The polishing compound embedded in the CLBO and fused silica surfaces were to a depth of less than 100nm. We were able to remove polishing compound without degrading the surface condition when the applied ion beam voltage was less than 200 V. The laser-induced surface damage threshold of CLBO was improved up to 15J/$\textrm{cm}^2$(wavelength: 355 nm, pulse width: 0.85 ns)as compared with that of the as-polished surface (11 J/$\textrm{cm}^2$). The laser-induced surface damage of fused silica also increased from 7.5J/$\textrm{cm}^2$ to 15J/$\textrm{cm}^2$. For the irradiation of a 266 nm high-intensity and high-repetition laser light, the surface lifetime of CLBO and fused silica could be more doubled compared with that of the as-polished surface.

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The Fabrication of (Ga, Al) As/GaAs Modified Multi-Quantum Well Laser Diode by MOCVD (MOCVD법에 의한 (Ga, Al) As/GaAs 변형된 영지우물 레이저 다이오드의 제작)

  • Kim, Chung-Jin;Kang, Myung-Ku;Kim, Yong;Eom, Kyung-Sook;Min, Suk-Ki;Oh, Hwan-Sool
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.9
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    • pp.36-45
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    • 1992
  • The Modified Multi-Quantum Well(MMQWAl) structures have been grown by Mental-Organic chemical Vapor Deposition(MOCVD) method and stripe type MMQW laser diodes have been investigated. In the case of GaAs/AlGaAs superlattice and quantum well growth by MOCVD, the periodicity, interface abruptess, Al compositional uniformity and layer thickness have been confirmed though the shallow angle lapping technique, double crystal x-ray diffractometry (DCXD) and photoluminescence (PL) measurement. stripe-type MMQW laser diodes have been fabricated using the process technology of photolithography, chemical etching, ohmic contact, back side removing and cleaving. As the result of the electrical and opticalmeasurement of these laser diodes, we have achieved the series resistance of $1[\Omega}~2{\Omega}$ by current-voltage measurements, the threshold current of 200-300mA by currnt-light measurements and the lasing wavelength of 8000-8400$\AA$ by lasing spectrum measurements.

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Analysis on Design and Fabrication of High-diffraction-efficiency Multilayer Dielectric Gratings

  • Cho, Hyun-Ju;Lee, Kwang-Hyun;Kim, Sang-In;Lee, Jung-Hwan;Kim, Hyun-Tae;Kim, Won-Sik;Kim, Dong Hwan;Lee, Yong-Soo;Kim, Seoyoung;Kim, Tae Young;Hwangbo, Chang Kwon
    • Current Optics and Photonics
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    • v.2 no.2
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    • pp.125-133
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    • 2018
  • We report an in-depth analysis of the design and fabrication of multilayer dielectric (MLD) diffraction gratings for spectral beam combining at a wavelength of 1055 nm. The design involves a near-Littrow grating and a modal analysis for high diffraction efficiency. A range of wavelengths, grating periods, and angles of incidence were examined for the near-Littrow grating, for the $0^{th}$ and $-1^{st}$ diffraction orders only. A modal method was then used to investigate the effect of the duty cycle on the effective indices of the grating modes, and the depth of the grating was determined for only the $-1^{st}$-order diffraction. The design parameters of the grating and the matching layer thickness between grating and MLD reflector were refined for high diffraction efficiency, using the finite-difference time-domain (FDTD) method. A high reflector was deposited by electron-beam evaporation, and a grating structure was fabricated by photolithography and reactive-ion etching. The diffraction efficiency and laser-induced damage threshold of the fabricated MLD diffraction gratings were measured, and the diffraction efficiency was compared with the design's value.

Effects of Mixing Ratio of Silicon Carbide Particles on the Etch Characteristics of Reaction-Bonded Silicon Carbide

  • Jung, Youn-Woong;Im, Hangjoon;Kim, Young-Ju;Park, Young-Sik;Song, Jun-Baek;Lee, Ju-Ho
    • Journal of the Korean Ceramic Society
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    • v.53 no.3
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    • pp.349-353
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    • 2016
  • We prepared a number of reaction-bonded silicon carbides (RBSCs) made from various mixing ratios of raw SiC particles, and investigated their microstructure and etch characteristics by Reactive Ion Etch (RIE). Increasing the amount of $9.5{\mu}m$-SiC particles results in a microstructure with relatively coarser Si regions. On the other hand, increasing that of $2.6{\mu}m$-SiC particles produces much finer Si regions. The addition of more than 50 wt% of $2.6{\mu}m$-SiC particles, however, causes the microstructure to become partially coarse. We also evaluated their etching behaviors in terms of surface roughness (Ra), density and weight changes, and microstructure development by employing Confocal Laser Scanning Microscope (CLSM) and Scanning Electron Microscope (SEM) techniques. During the etching process of the prepared samples, we confirmed that the residual Si region was rapidly removed and formed pits isolating SiC particles as islands. This leads to more intensified ion field on the SiC islands, and causes physical corrosion on them. Increased addition of $2.6{\mu}m$-SiC particles produces finer residual Si region, and thus decreases the surface roughness (Ra.) as well as causing weight loss after etching process by following the above etching mechanism.

Bonding effects of cleaning protocols and time-point of acid etching on dentin impregnated with endodontic sealer

  • Tatiane Miranda Manzoli;Joissi Ferrari Zaniboni;Joao Felipe Besegato;Flavia Angelica Guiotti;Andrea Abi Rached Dantas;Milton Carlos Kuga
    • Restorative Dentistry and Endodontics
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    • v.47 no.2
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    • pp.21.1-21.11
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    • 2022
  • Objectives: This study aimed to investigate the bonding effects of cleaning protocols on dentin impregnated with endodontic sealer residues using ethanol (E) or xylol (X). The effects of dentin acid etching immediately (I) or 7 days (P) after cleaning were also evaluated. For bonding to dentin, universal adhesive (Scotchbond Universal; 3M ESPE) was used. The persistence of sealer residues, hybrid layer formation and microshear bond strength were the performed analysis. Materials and Methods: One hundred and twenty bovine dentin specimens were allocated into 4 groups (n = 10): G1 (E+I); G2 (X+I); G3 (E+P); and G4 (X+P). The persistence of sealer residues was evaluated by SEM. Confocal laser scanning microscopy images were taken to measure the formed hybrid layer using the Image J program. For microshear bond strength, 4 resin composite cylinders were placed over the dentin after the cleaning protocols. ANOVA followed by Tukey test and Kruskal-Wallis followed by Dunn test were used for parametric and non-parametric data, respectively (α = 5%). Results: G2 and G4 groups showed a lower persistence of residues (p < 0.05) and thicker hybrid layer than the other groups (p < 0.05). No bond strength differences among all groups were observed (p > 0.05). Conclusions: Dentin cleaning using xylol, regardless of the time-point of acid etching, provided lower persistence of residues over the surface and thicker hybrid layer. However, the bond strength of the universal adhesive system in etch-and-rinse strategy was not influenced by the cleaning protocols or time-point of acid etching.

Recent development of polymer optical circuits for the next generation fiber to the home system

  • Kaino, Toshikuni
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.13-14
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    • 2006
  • The use of soft-lithography instead of standard photolithography and dry etching technologies is attractive because inexpensive optical device can be realized. Polymerization using multi-photon absorption of materials is also a good method for optical waveguide fabrication. Laser induced self-writing technology of optical waveguide is also very simple and attractive. Using these processes, we can fabricate and interconnect optical circuits at once. In this presentation, several simple fabrication methods will be introduced. New optical loss evaluation method for polymer optical waveguides will also be presented

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