• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.886-888
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• 1998

By irradiating photoresist on Si or glass with $Ar^+$ (${\lambda}$=514 nm, CW) and Nd:YAG (${\lambda}$=266 and 532nm, pulse) laser beam, the photoresist was etched masklessly in air. Using a fourth harmonic Nd:YAG laser beam, the etching threshold of energy fluence was $25\;J/cm^2$ and the damage of substrate was appeared over $40\;J/cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.41-44
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• 1998

Dual mode resonators were fabricated using high temperature superconductor. The deposited material was $Y_1Ba_2Cu_3O_{7-x}$(YBCO) on MgO(100) substrate using pulsed laser deposition. Dual mode resonators were patterned by standard photolithography process and wet etching. At the back-side of the substrate, the ground plane with the metal layer of Ti and Ag was fabricated. The transition temperatures of YBCO films were 85-88 K, and network analyzer was used for testing the performance of the resonators. The input/output feedline angles of each resonator were $60^{\circ}$and $100^{\circ}$. The resonant frequency of resonators was 10 GHz. In this paper, dual mode resonator was fabricated for the application of satellite communication.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.593-599
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• 1996

Laser scribing of silicon plays an important role in metallization including the grid pattern and the front surface geometry which means aspect ratio of metal contacts. To make a front metal electrode of buried contact solar cell, we used ND:YAG lasers that deliver average 3-4W at TEM$\_$00/ mode power to sample stage. The Q-switched Nd:YAG laser of 1.064 gm wavelength was used for silicon scribing with 20-40.mu.m width and 20-200.mu.m depth capabilities. After silicon slag etching, the groove width and depth for buried contact solar cell are -20.mu.m and 30-50.mu.m respectively. Using MEL 40 Nd:YAG laser system, we can scribe the silicon surface with 18-23.mu.m width and 20-200.mu.m depth controlled by krypton arc lamp power, scan speed, pulse frequency and beam focusing. We fabricated a buried contact Silicon Solar Cell which had an energy conversion efficiency of 18.8 %. In this case, the groove width and depth are 20.mu.m and 50.mu.m respectively.

• 한국태양에너지학회 논문집
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• 제31권4호
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• pp.103-111
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• 2011

Laser drilling of vias is the one of key technologies in developing Emitter-Wrap Through(EWT) solar cell which is particularly attractive due to the use of industrial processing and common solar grade p-type silicon materials. While alternative economically feasible drilling process is not available to date, the processing time and laser induced damage should be as small as possible in this process. This paper provides an overview on various factors that should be considered in using the laser via drilling technology for developing highly efficient and industrially applicable EWT solar cells.

• Journal of Oral Medicine and Pain
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• 제31권3호
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• pp.211-221
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• 2006

목적 전통적 고속 회전식 절삭기구 또는 Er:YAG 레이저로 삭제된 상아질에, 두가지 다른 접착 시스템을 적용한 후, 축조한 컴포지트 레진의 미세인장결합강도를 비교하고, 다양한 Er:YAG 레이저 에너지가 미세인장결합강도에 미치는 영향을 평가한다. 재료 및 방법 40개의 제3대구치를 사용하여, 평평한 상아질면을 만든 후 8개의 군으로 나누어, 4가지 절삭방법 (고속 회전식 절삭기구, 2 W, 3 W, 4 W 출력의 Er:YAG 레이저) 중 한 가지로 삭제하고, 2가지 접착 시스템 (Scotchbond Multipurpose Plus, Clearfil SE bond) 중 한 가지로 처리하여 컴포지트 레진을 축조하였다. 24시간의 저장 후, 각 시편을 결합면에 수직으로 자르고, 미세인장결합강도를 측정하였다. 각 군의 미세인장결합강도는 평균$\pm$표준 편차로 표현하였고, 통계분석을 위해 two-way ANOVA, one-way ANOVA, student-Newman-Keuls' multiple comparison test, 그리고 t-test가 사용되었다. 결과 및 결론 1. 접착시스템과 관계없이, 절삭방법에 따른 미세인장결합강도의 유의한 차이가 있었고, 높은 순서대로 나열하면 다음과 같다: 3 W, 2 W, Bur, 4 W (p<0.001). 2. 절삭방법과 관계없이, Scotchbond Multipurpose Plus로 처리한 군이 Clearfil SE bond로 처리한 군보다 유의하게 높은 미세인장결합강도를 나타냈다 (p<0.001). 3. Scotchbond Multipurpose Plus로 처리한 군 중에서, 3 W 레이저 절삭군이 가장 높은 미세인장결합강도를 나타냈고, 다음이 Bur, 2 W, 4 W 절삭군 순이었다 (p<0.001). 4. Clearfil SE bond로 처리한 군 중에서 3 W 레이저 절삭군이 가장 높은 미세인장결합강도를 나타냈고, 다음이 2 W, 4 W, Bur 절삭군 순이었다 (p<0.001). 5. 두 가지 접착 시스템 모두에서, 레이저로 절삭한 군의 미세인장결합강도의 차이가 있었고, 높은 순서대로 나열하면 3 W, 2 W, 4 W 순이었다 (p<0.001). :상아질에 접착된 컴포지트 레진의 미세인장결합강도는 절삭방법과 접착시스템의 상호작용에 의해 유의한 영향을 받았다. 임상에서 레진 수복시, 2 W-3 W 범위내로 Er:YAG laser를 사용한다면 전통적 핸드피스 못지않게 수복물의 우수한 결합강도를 얻을 수 있다. 특히 시술시간의 단축, 과도한 산부식에 따른 부작용의 예방을 위해 Clearfil SE bond를 포함한 self etching system을 사용하고자 한다면 bur보다 Er:YAG laser를 이용한 삭제방법이 더 유용한 결합력을 제공할 것이다.

• 소성∙가공
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• 제14권5호
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• pp.473-476
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• 2005

The demand of on-chip total analyzing system with MEMS (micro electro mechanical system) bio/chemical sensor is rapidly increasing. In on-chip total analyzing system, to detect the bio/chemical products with submicron feature size, a filtration system with nano-filter is required. One of the conventional methods to fabricate nano-filter is to use direct patterning or RIE (reactive ion etching). However, those procedures are very costly and are not suitable fur mass production. In this study, we suggested new fabrication method for a nano-filter based on replication process, which is simple and low cost process. After the Si master was fabricated by laser interference lithography and reactive ion etching process, the polymeric mold was replicated by UV-imprint process. Metallic nano-filter was fabricated after removing the polymeric part of metal deposited polymeric mold. Finally, our fabrication method was applied to metallic nano-filter with $1{\mu}m$ pitch size and $0.4{\mu}m$ hole size for bacteria sensor application.

• 소성∙가공
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• 제13권3호
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• pp.285-289
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• 2004

Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.

• 한국표면공학회지
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• 제50권5호
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• pp.315-321
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• 2017

Antireflective pyramid arrays can be readily obtained via anisotropic etching in alkaline solution (KOH, NaOH), which is widely used in crystalline-Si (c-Si) solar cells. The periodic inverted pyramid arrays show even lower light reflectivity because of their superior light-trapping characteristics. Since this inverted pyramidal structures are mostly achieved using very complex techniques such as photolithograpy and laser processes requiring extra costs, here, we demonstrate the Cu-nanoparticle assisted chemical etching processes to make the inverted pyramidal arrays without the need of photolithography. We have mainly controlled the concentration of $Cu(NO_3)_2$, HF, $H_2O_2$ and temperature as well as time factors that affecting the reaction. Optimal inverted pyramid structure was obtained through reaction parameters control. The reflectance of inverted pyramid arrays showed < 10% over 400 to 1100 nm wavelength range while showing 15~20% in random pyramid arrays.

• Design & Manufacturing
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• 제14권3호
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• pp.44-49
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• 2020

One of display trends today is development of high pixel density. To get high PPI, a small size of pixel must be developed. RGB pixel is arranged by evaporation process which determines pixel size. Normally, a fine metal mask (FMM; Invar alloy) has been used for evaporation process and it has advantages such as good strength, and low thermal expansion coefficient at low temperature. A FMM has been manufactured by chemical etching which has limitation to controlling the pattern shape and size. One of alternative method for patterning FMM is laser micromachining. Femtosecond laser is normally considered to improve those disadvantages for laser micromachining process due to such short pulse duration. In this paper, a femtosecond laser drilling for thickness of 16 ㎛ FMM is examined. Additionally, we introduce experimental results for controlling taper angle of hole by vibration module adapted in laser system. We used Ti:Sapphire based femtosecond laser with attenuating optics, co-axial illumination, vision system, 3-axis linear stage and vibration module. By controlling vibration amplitude, entrance and exit diameters are controllable. Using vibrating objective lens, we can control taper angle when femtosecond laser hole drilling by moving focusing point. The larger amplitude of vibration we control, the smaller taper angle will be carried out.

• 한국결정성장학회지
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• 제11권3호
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• pp.106-111
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• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.