• 한국항공운항학회지
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• 제17권4호
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• pp.8-16
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• 2009

An experimental study was carried out to investigate aerodynamic characteristics on reduced frequency of flapping wings. The half span of the wing is 28cm, and the mean chord length of wing is 10cm. In flight, the Reynolds Number range of birds is about $10^4$, and the reduced frequency during a level flight is 0.25. The experimental variables of present study were set to have similar conditions with the bird flight's one. The freestream velocities in a wind tunnel were 2.50, 3.75 and $5.00^m/s$, and the corresponding Reynolds numbers were $1.7{\times}10^4$, $2.5{\times}10^4$ and $3.3{\times}10^4$, respectively. The wing beat frequencies of an experimental model were 2, 3 and 4Hz, and the corresponding reduced frequency was decided between 0.1 and 0.5. Aerodynamic forces of an experimental flapping model were measured by using 2 axis load-cell. Inertial forces measured in a vacuum chamber were removed from measuring forces in the wind tunnel in order to acquire pure aerodynamic forces. Hall sensors and laser trigger were used to make sure the exact position of wings during the flapping motion. Results show that the ratio of downstroke in a wing beat cycle is increased as a wing beat frequency increases. The instantaneous lift coefficient is the maximum value at the end of downstroke of flapping wing model. It is found that a critical reduced frequency with large lift coefficient is existed near k=0.25.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• E2M - 전기 전자와 첨단 소재
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• 제12권7호
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• pp.7-11
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• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• 대한기계학회논문집B
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• 제34권2호
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• pp.213-218
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• 2010

인공위성 적외선 탑재체의 열싱크 역할을 위해, 액체헬륨을 이용하여 극저온패널(가로 약 800 mm, 세로 약 700 mm)을 4.2 K까지 냉각시키는 시스템을 설계, 개발, 검증하였다. 유효직경 8 m, 유효 깊이 10 m의 대형열진공챔버에서 검증된 본 냉각시스템은 500리터 용량의 액체헬륨용기 두 개(극저온 패널로의 액체헬륨 또는 저온헬륨가스 주 공급용기 및 주공급용기로의 재충진용기)를 사용하였는데, 목표인 극저온패널의 냉각 및 온도제어는 주 공급용기 내부의 미세압력조절을 통해 액체헬륨 공급유량을 제어함으로써 이루었다. 극저온패널에 공급된 후 배기되는 저온 헬륨가스는 특별히 설계, 제작된 사중진공배관의 제3층을 흐르며 열차단막의 역할을 수행함으로써, 액체헬륨 공급 라인인 제1층(중심배관)으로의 열유입을 최소화하였다. 극저온패널을 상온에서 40 K(합성표준불확도 194 mK)까지 냉각시키는데 약 3시간이 소요되었으며, 20 W의 열을 발산하는 극저온패널을 40 K 주변 온도에서 1 K 이내의 온도균일도를 가지며 유지할 수 있었다.