• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.4
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• pp.524-533
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• 2003

DBD(Dielectric Barrier Discharge) plasma in air is well established for the production of large quantities of ozone and is more recently being applied to aftertreatment processes for HAPs(Hazardous Air Pollutants). Aim of this work is to determine design and operating parameters of a hybrid air cleaning system. DBD and ESP(Electrostatic Precipitator) are used as nano particle charger and collector, respectively. Pelletized MnO$_2$ catalyst or activated carbon is used fer ozone decomposition or adsorption material. AC voltage of 7～10 KV(rms) and 60 Hz is used as DBD plasma source. DC - 8 KV is applied to the ESP for particle collection. The overall particle collection efficiency for the hybrid system is over 85 % under 0.64 m/s face velocity. Ozone decomposition efficiency with pelletized MnO$_2$ catalyst or activated carbon packed bed is over 90 % when the face velocity is under 0.4 m/s in dry air.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.257-257
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• 2011

The amorphous indium-gallium-zinc-oxide (a-IGZO) materials for use in high performance display research fields are strongly investigated due to its good performance, such as high mobility and better transparency. However, the stability of a-IGZO materials is increasingly becoming one of critical issues due to the sub-gap electron trap sites induced by rough interfaces during deposition processing. It is well-known that the threshold voltage shift is related to interface roughness and oxygen vacancy formed by breaking weak chemical bonds. Here, we report the better properties of transparent oxide transistors by reducing the threshold voltage shift with an external rf plasma supported magnetron sputtering system. Mainly, our sputtering method causes the surface of sample to be sleek, so that it prevents the formation of various defects, such as shallow electron trap sites in the interface. External rf power was applied from 0 to 50W during RF sputtering process to enhance the stability of our oxide transistor without having a large voltage shift. To observe the effects of external rf-plasma source on the properties of our devices, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) are carried out to observe surface roughness and morphology of sputtered thin film. In addition, typical electrical properties, such as I-V characteristics are analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.74-76
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• 2006

An external electrode fluorescent lamp (EEFL) has an advantage of a long lifetime in the ear1y stages of the study on plasma discharge, interest in the lamp continues. Researches on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high brightness using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, EEFL presented the possibility of using it as a light source for back-lights. However, because EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significant1y affected by frequency. Thus, this study verified the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell's electromagnetic field simulation and examined the relationship between the change in the EEFL frequency and brightness by measuring the optical characteristics. In addition, the characteristics of the transformation of energy orbits were verified by investigating the characteristics of the wavelength according to the change in frequency through the OES.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.221-221
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• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.110-115
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• 2007

A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.146-147
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• 2011

Processing a large area substrate for liquid crystal display (LCD) or solar panel applications in a capacitively coupled plasma (CCP) reactor is becoming increasingly challenging because of the size of the substrate size is no longer negligible compared to the wavelength of the applied radio frequency (RF) power. The situation is even worse when the driving frequency is increased to the Very High Frequency (VHF) range. When the substrate size is still smaller than 1/8 of the wavelength, one can obtain reasonably uniform process results by utilizing with methods such as tailoring the precursor gas distribution by adjustingthrough shower head hole distribution or hole size modification, locally adjusting the distance between the substrate and the electrode, and shaping shower head holes to modulate the hollow cathode effect modifying theand plasma density distribution by shaping shower head holes to adjust the follow cathode effect. At higher frequencies, such as 40 MHz for Gen 8.5 (2.2 m${\times}$2.6 m substrate), these methods are not effective, because the substrate is large enough that first node of the standing wave appears within the substrate. In such a case, the plasma discharge cannot be sustained at the node and results in an extremely non-uniform process. At Applied Materials, we have studied several methods of modifying the standing wave pattern to adjusting improve process non-uniformity for a Gen 8.5 size CCP reactor operating in the VHF range. First, we used magnetic materials (ferrite) to modify wave propagation. We placed ferrite blocks along two opposing edges of the powered electrode. This changes the boundary condition for electro-magnetic waves, and as a result, the standing wave pattern is significantly stretched towards the ferrite lined edges. In conjunction with a phase modulation technique, we have seen improvement in process uniformity. Another method involves feeding 40 MHz from four feed points near the four corners of the electrode. The phase between each feed points are dynamically adjusted to modify the resulting interference pattern, which in turn modulate the plasma distribution in time and affect the process uniformity. We achieved process uniformity of <20% with this method. A third method involves using two frequencies. In this case 40 MHz is used in a supplementary manner to improve the performance of 13 MHz process. Even at 13 MHz, the RF electric field falls off around the corners and edges on a Gen 8.5 substrate. Although, the conventional methods mentioned above improve the uniformity, they have limitations, and they cannot compensate especially as the applied power is increased, which causes the wavelength becomes shorter. 40 MHz is used to overcome such limitations. 13 MHz is applied at the center, and 40 MHz at the four corners. By modulating the interference between the signals from the four feed points, we found that 40 MHz power is preferentially channeled towards the edges and corners. We will discuss an innovative method of controlling 40 MHz to achieve this effect.

• Parasites, Hosts and Diseases
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• v.49 no.4
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• pp.427-430
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• 2011

The aim of this study was to test the susceptibility of mice to Trypanosoma evansi treated with human plasma containing different concentrations of apolipoprotein L-1 (APOL1). For this experiment, a strain of T. evansi and human plasma (plasmas 1, 2, and 3) from 3 adult males clinically healthy were used. In vivo test used 50 mice divided in 5 groups (A to E) with 10 animals in each group. Animals of groups B to E were infected, and then treated with 0.2 ml of human plasma in the following outline: negative control (A), positive control (B), treatment with plasma 1 (C), treatment with plasma 2(D), and treatment with plasma 3 (E). Mice treated with human plasma showed an increase in longevity of $40.9{\pm}0.3$ (C), $20{\pm}9.0$ (D) and $35.6{\pm}9.3$ (E) days compared to the control group (B) which was $4.3{\pm}0.5$ days. The number of surviving mice and free of the parasite (blood smear and PCR negative) at the end of the experiment was 90%, 0%, and 60% for groups C, D, and E, respectively. The quantification of APOL1 was performed due to the large difference in the treatments that differed in the source plasma. In plasmas 1, 2, and 3 was detected the concentration of 194, 99, and 115 mg/dl of APOL1, respectively. However, we believe that this difference in the treatment efficiency is related to the level of APOL1 in plasmas.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1684-1685
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• 2011

This paper presents a theoretical and numerical analysis for thermal isolation of silicon micro-structures, especially for a large size with poor thermal conductivity, as well as straightforward solution for such an issue. Additional metal patterns underneath the silicon structures effectively reduces the thermal isolation. Heat transfer mechanism is analyzed using an equivalent circuit of thermal network including plasma, a heat source, heat capacitors, and thermal resistances. The FEM simulation was carried out to investigate the temperature change of silicon micro-structures according to process time. The temperature of silicon micro-structures with 2 ${\mu}m$ thick chrome layer at a steady state is $86^{\circ}C$, an approximately 40% decrease from the silicon microstructure without thin metal ($122^{\circ}C$)

• Bulletin of the Korean Space Science Society
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• 2006.10a
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• pp.52-52
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• 2006

Many spacecraft failures and anomalies have been attributed to energetic electrons in the Earth's magnetosphere. While the dynamics of these electrons have been studied extensively for several decades, the fundamental question of how they are accelerated is not fully resolved. Proposed theories have not been successful in explaining fast high energy increase such as REE (Relativistic electron enhancement). In this presentation, we show observations of energetic electron precipitation measured by the Korean satellite, STSAT-1 which simultaneously detect (100ev - 20 keV) and (170 - 360 keV) energy electrons at the 680 km orbit, when the RES event observed at the geosynchronous orbit on October 13, 2004. STSAT-1 observed intense electron precipitation in both energy ranges occurred in the midnight sector clearly demonstrating that electrons having wide energy band are injected from the plasma sheet. To make the balance between loss and injection, the injected electron flux should be also large. In this situation, the injected electrons can be trapped into the magnetosphere and produce REE, though they have low e-folding energies. We propose this plasma sheet injection might be the primary source of relativistic electron (1 MeV) flux increases.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.355-360
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• 2007

The recent TFT-LCD Trend that is done large size gradually. As size of monitor great, though problem happens, it is that consumer's request which it makes monitor combined TV function. Monitor and TV are no difference externally greatly, but define difference happens as for backlight. An external electrode fluorescent lamp (EEFL) has an advantage of a long lifetime in the early stages of the study on plasma discharge, interest in the lamp continues. Researches on the operation of external electrode fluorescent lamps have focused mainly on its use of a type of high frequency (MHz). By performing high Luminance using a square wave operation method with the low frequency below 100kHz, which is applied to a narrowed tube type lamp that has several mm of lamp diameter, EEFL presented the possibility of using it as a light source for back-lights. However, because EEFL generates plasma using wall charges, which considers the impedance characteristics of glass based on the structural principle in discharge, it can be significantly affected by frequency. Thus, this study verified the change in the characteristics of electromagnetic fields according to the change in frequency through a Maxwell electromagnetic field simulation and examined the relationship between the change in the EEFL frequency and Luminance by measuring the optical characteristics.