• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1609-1611
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• 1994

In ECR and helicon reactors for plasma processing, a high density plasma is generated in a source region which is connected to a diffusion region where the processing takes place. Large density and potential gradients can develop at the orifice of the source which drive ion currents into the diffusion region. The average ion velocity may become the order of the sound velocity. Measurements of the ion saturation current to a Langmuir probe are used as a standard method of determining the plasma density in laboratory discharges. However, the analysis becomes difficult in a steaming plasma. We have used the HAMLET plasma simulator to simulate the ion flow to a large langmuir probe in an ECR plasma. The collection surface was aligned with the Held upstream, normal to the field, and downstream. ion trajectories through the electric and magnetic fields were calculated including ion-neutral collisions. We examines the ratio of ion current density to plasma density as a function of magnetic field and pressure.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.573-576
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• 1998

In this paper, we analyzed electric field density and plasma condition to ICP reactor geometry structure, to generate plasma, to maintain plasma uniformity of large area LCD panel in ICP reactor also, we simulated electric field density for all kind existence current (antena and plasma current) in ICP reactor to analyze plasma antena structure

• Journal of Information Display
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• v.3 no.2
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• pp.26-30
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• 2002

Large area plasma source has been built for LCD etcher by an array of $2{\times}2$ ICP sources. Since only one RF power supply and one impedance matching network is used in this configuration, any difference in impedances of unit RF antennas causes unbalanced power delivery to the unit ICP. In order to solve this unavoidable unbalance, unit antenna is designed to have a movable tap, with which the inductance of each unit can be adjusted individually. The plasma density becomes symmetric and etch rate becomes more uniform with the impedance adjustment. The concept of adding axial time-varying magnetic field to the single ICP source is applied to the array ICP source, and is found to be effective in terms of etch rate and uniformity.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.384-390
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• 2001

The hollow cathode discharge is a kind of plasma formation scheme in which plasma is formed inside a hollow structure, the cathode, with current to a nearby anode of arbitrary shape. In this scheme, electrons reflex radially within the hollow cathode, establishing an efficient ionization mechanism for gas within the cavity. An existence condition for the hollow cathode effect is that the electron mean-free-path for ionization is of the order of the cavity radius. Thus the size of this kind of plasma source must decrease as the gas pressure is increased. In fact, the hollow cathode effect can occur even at atmospheric pressure for cathode diameters of order 10-100 $\mu\textrm{m}$. That is, the "natural" operating pressure regime for a "micro hollow cathode discharge" is atmospheric pressure. This kind of plasma source has been the subject of increasing research activity in recent years. A number of geometric variants have been explored, and operational requirements and typical plasma parameters have been determined. Large arrays of individual tiny sources can be used to form large-area, atmospheric-pressure plasma sources. The simplicity of the method and the capability of operation without the need for the usual vacuum system and its associated limitations, provide a highly attractive option for new approaches to many different kinds of plasma applications, including plasma surface modification technologies. Here we review the background work that has been carried out in this new research field.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.861-864
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• 1999

A new plasma source using the multi-cathode electron beam has been designed and manufactured. A multi-cathode was adopted to produce bulk plasmas in a large volume. Multi-cathode electron beam plasma source(MCEBPS) was found to generate stable plasmas over the wafer diameter of 300 mm or above. W(tungsten) filament was used as a cathode. Over a 320 mm diameter, both the plasma potential $V_p$ and floating potential $V_f$ were uniformly maintained and the difference between $V_p and V_f$ was measured to be small. The plasma density was around $10^{10} cm^{-3}$ and its variation along the radial distance was small.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.5
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• pp.34-39
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• 2022

The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.179.2-179.2
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• 2013

A large-area RF-driven ion source is being developed at Germany for the heating and current drive of ITER device. Negative hydrogen ion sources are major components of neutral beam injection (NBI) systems in future large-scale fusion experiments such as ITER and DEMO. The RF sources for the production of positive hydrogen ions have been successfully developed at IPP (Max-Planck-Institute for Plasma Physics), Garching, for the ASDEX-U and W7-AS neutral beam heating systems. Ion sources of the first NBI system (NBI-1) for the KSTAR tokamak have been developed successfully with a bucket plasma generator based on the filament arc discharge, which have contributed to achieve a good plasma performance such as 15 sec H-mode operation with an injection of 3.5 MW NB power. There is a development plan of RF ion source at the KAERI to extract the positive ions, which can be used for the second NBI system (NBI-2) of the KSTAR and to extract the negative ions for future fusion devices such as Fusion Neutron Source and Korea-DEMO. The development progresses of RF ion source at the KAERI are described in this presentation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.183-183
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• 2016

Inductively coupled plasma having the high-density is often used for high productivity in the plasma processing. In large area processing, the plasma can be generated by using the multi-pole connected in parallel. However, in case of this, the power cannot transfer to plasma uniformly. To address the problem, we studied the mechanism of inductively coupled plasma connected in parallel by using transformer model. We also studied about the change of the plasma parameters over the time through the power balance equation and particle balance equation.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.544-547
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• 2006

In this study, the characteristics of large area internal linear ICP sources of $1,020mm{\times}920mm$ (substrate area is $880mm{\times}660mm$) were investigated using a multiple linear antennas with U-type parallel connection. Using the multiple linear antennas with U-type parallel connection, a high plasma density of $2{\times}10^{11}/cm^3$ and a high power transfer efficiency of about 88% could be obtained at 5kW of RF power and with 20mTorr Ar. A low plasma potential of less than 26V and a low electron temperature of $2.6{\sim}3.2eV$ could be also obtained. The measured plasma uniformity on the substrate size of 4th generation $(880mm{\times}660mm)$ was about 4%, therefore, it is believed that the multiple linear antennas with U-type parallel connection can be successfully applicable to the large area flat panel display processing.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.490-490
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• 2013

In semiconductor industry, it is expected that plasma process which use 450 mm source will be used at next generation. However, main obstacle of the large area plasma source is plasma uniformity from it. When electrode is enlarged, field difference between center area and side area reduces the plasma uniformity [1-3]. Therefore we investigate multi-electrode which diminish this field difference.We designed two multi-electrode models. One has two segments and the other has five segments. Each multi-electrode model is connected with two power generator and two matchers. One generator and one matcher is connected with center electrode part. The other one generator and the other one matcher is connected with side electrode part. The ion density is measured at 29 points by using floating harmonic method [4-6]. After measuring the data of each multi-electrode model, we discuss the difference of profile between two models' data.