• Journal of Biomedical Engineering Research
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• v.24 no.2
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• pp.83-89
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• 2003

The gas electron multiplier placed in the drift volume of conventional gas detectors, is a conceptually simple device for producing a large gas gain by concentrating the drift electric field over a very short distance to the point that electron avalanching occurs(〉 10$^4$ V/cm), greatly increasing the number of drifting electrons. This device consists of a thin insulating foil of several tens of urn in thickness. covered on each side with a thin metal layer(Cu), with tiny holes, usually 100 ${\mu}{\textrm}{m}$ or less in diameter. and with a spacing of 100-200 ${\mu}{\textrm}{m}$ through the entire foil. perforated by using chemical etching or high-powered laser beam technique In this study, we have investigated its operating properties with various experimental conditions, and demonstrated the possibility of using this device as a digital X-ray imaging sensor, by acquiring X-ray images based on the scintillation properties of the gas electron multiplier with standard CCD camera.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.10
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• pp.1877-1889
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• 1992

Upsetting is performed in open-die press forging to deform metal in all directions in order to enhance soundness of a product and reduce directionality of properties caused by casting. It is necessary to ensure sufficient forging ratio for subsequent cogging operations and consolidate the void along the centerline. To obtain these benefits, the upper die shape (dome and dished shape) is considered as an upsetting parameter. Thermo-viscoplastic finite element analysis has been carried out so as to understand the influence of upper die shape on the effective strain, hydrostatic stress and temperature in the upset-forged ingots without internal defects. The analysis is focused on the investigation into internal void closure in ingots with pipe holes and circular voids. The computational results have shown that the volume fraction of the void is independent of the circular void size and the closure of internal voids is much more influenced by the effective strain than the hydrostatic stress around the void. It is finally suggested that the height reduction must be over 35% for consolidation of internal voids.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.989-995
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• 2000

G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ is a very promising material for the high-speed device due to the fact that electron and hole mobilities for the strained G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ are greatly enhanced. Because G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$ has a direct band gap for the proper combination of x and y, it can be applied to the optoelectronic device. Therefore, the study of the electrical property for G $e_{1-x}$ S $n_{x}$G $e_{1-y}$S $n_{y}$(001) with a direct energy gap is needed. G $e_{1-x}$ S $n_{x}$ layer can not be grown thickly due to the large difference of lattice constants. This fact prefers the structure of the device where electrons and holes move in the plane direction. The transverse mobilities of electron and hole for G $e_{0.8}$S $n_{0.2}$Ge(001) are 2~3 times larger than those for Ge/Ge/ sub0.8/S $n_{0.2}$(001). Therefore, G $e_{0.8}$S $n_{0.2}$Ge(001) is expected to be better than Ge/G $e_{0.8}$S $n_{0.2}$(001) for the development of the high-speed device.h-speed device.device.h-speed device. device.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.91-97
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• 2013

Self-heating effects during operation of high current AlGaN/GaN power transistors degrade the current-voltage characteristics. In particular, this problem becomes serious when a low thermal conductivity Si substrate is used. In this work, AlGaN/GaN-on-Si devices were fabricated with various channel widths and Si substrate thicknesses in which the structure dependent self-heating effects were investigated by temperature dependent measurements as well as thermal simulation. Accordingly, a device structure that can effectively dissipate the heat was proposed in order to achieve the maximum current in a multi-channel, large area device. Employing via-holes and common electrodes with a 100 ${\mu}m$ Si substrate thickness improved the current level by 75% reducing the channel temperature by 68%.

• Journal of Periodontal and Implant Science
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• v.39 no.sup2
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• pp.253-259
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• 2009

Purpose: This study was aimed to evaluate the effect of implant drilling speed on the composition of particle size of collected bone debris. Methods: $Br{\aa}nemark$ $System^{(R)}$ drills were used to collect bone debris from 10 drilling holes (1 unit) at 1,500 rpm (Group A) and 800 rpm (Group B) in bovine mandible. After separating particles by size into > 500 ${\mu}m$, between 250 ${\mu}m$ and 500 ${\mu}m$, and < 250 ${\mu}m$ fractions, particle wet volume, dry volume, and weight were measured and the proportion of 3 fractions of bone debris to total wet volume, dry volume and weight was calculated as wet volume % , dry volume % and weight %. Results: No significant differences were found between Group A and B in wet volume, dry volume, and weight. However, of >500 ${\mu}m$ fractions, Group B had significantly higher wet volume %(P = 0.0059) and dry volume %(P = 0.0272) than in Group A. Conclusions: The drilling speed influenced the composition of particle size in collected drilling bone debris. The drilling in 800 rpm produced the more percentage of large particles than in 1,500 rpm. However, the drilling speed didn't effect on total volume of and weight of bone debris.

• Transactions of the Korean Society of Mechanical Engineers
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• v.9 no.2
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• pp.150-157
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• 1985

In terms of behavior of fatigue cracks propagated after build-up around the artificial drilled miro-hole, this study has been made of the build-up process of slips and micro cracks, behavior of micro-crack propagation and the definition of fatigue limit under the rotating bending stress with low carbon steel. The results of this study are as follows: (1) The fatigue limit is the repropagating critical stress for the nonpropagating cracks which have grown to some limit around the micro-hole in regard of the magnitude of micro-hole. (2) Behavior of the slips and micro-cracks initiation are occurring simultaneously in front and in rear of micro-hole tips in the view of the rotational direction, regardless of the magnitude of micro-hole. (3) Behavior of fatigue crack propagation is different from magnitude of micro-hole, its behavior is propagation of single crack about respectively large hole, but about respectively small hole, fatigue crack propagated joining phenomena of micro-cracks. (4) The behavior of fatigue fracture is affected by the factor of its defects in the view of magnitude of micro-hole when the diameter of the micro-holes are smaller than 50.mu.m, and this is also affected with the size effect of micro-hole diameter.

• Korean Journal of Computational Design and Engineering
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• v.13 no.6
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• pp.403-411
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• 2008

The alignment of facial images is crucial for 2D face recognition. This is the same to facial meshes for 3D face recognition. Most of the 3D face recognition methods refer to 3D alignment but do not describe their approaches in details. In this paper, we focus on describing an automatic 3D alignment in viewpoint of quantitative analysis. This paper presents a framework of 3D face alignment and normalization based on feature points obtained by Active Shape Models (ASMs). The positions of eyes and mouth can give possibility of aligning the 3D face exactly in three-dimension space. The rotational transform on each axis is defined with respect to the reference position. In aligning process, the rotational transform converts an input 3D faces with large pose variations to the reference frontal view. The part of face is flopped from the aligned face using the sphere region centered at the nose tip of 3D face. The cropped face is shifted and brought into the frame with specified size for normalizing. Subsequently, the interpolation is carried to the face for sampling at equal interval and filling holes. The color interpolation is also carried at the same interval. The outputs are normalized 2D and 3D face which can be used for face recognition. Finally, we carry two sets of experiments to measure aligning errors and evaluate the performance of suggested process.

• 한국지구물리탐사학회:학술대회논문집
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• 2003.11a
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• pp.142-149
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• 2003

Blind hydraulic backfilling is a commonly used technique for subsidence control of the strata over unapproachable waterlogged underground excavations. In this investigation model studies on all the three variants of this technique, namely, hydro-pneumatic or air-assisted gravity backfilling, pumped-slurry backfilling and simple gravity backfilling, have been carried out in fully transparent models of the underground excavations. On examination of the filling process, it was revealed that in all the three cases, the basic process of filling occurs by sand transport along one or more meandering channels. The relative influence of sand, water and air flow rates on the area of filling from a single inlet point and the hydraulic pressure loss per unit length were studied in details. In hydro-pneumatic backfilling process, the air bubbles while moving upward through the meandering channels provide an additional buoyant force over and above the available hydraulic head. In this way the area of filling from a single borehole may be quite large even at small flow rates of water. During actual field implementation the injected air, if not released completely from the rise side holes, may cause troubles by way of creating potholes on the surface. The pumped-slurry technique has shown its capability of filling a relatively larger area at faster rate, especially when high-volume, low-pressure method was selected. But simple gravity filling was also found to be equally effective method as slurry pumping, especially when flow rates were high. In the second and third method discussed above, examination of variations of injection pressure was also done and its relation with physical phenomenon was also attempted. Some empirical relationships were also developed using multivariate regression with a view to help the practicing engineers.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.276-276
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• 2010

Large-area micropatterned array of Co/Ni bilayer anti-dots was fabricated using photolithography and wet etching process. The surface morphology as well as the surface topography was checked by scanning electron microscopy and atomic force microscopy, whereas the magnetic properties were studied by magneto-optical Kerr effect (MOKE) and magnetic force microscopy (MFM). Systematic studies of the magnetic-reversal mechanism, the in-plane anisotropy and the switching field properties were carried out. To get a comprehensive knowledge about the domain configuration, we also employed OOMMF simulations. It was found from the MOKE measurements that a combined effect of configurational and the magneto-crystalline anisotropy simultaneously works in such micropatterned bilayer structures. In addition, the inclusion of holes in the uniform magnetic film drastically affected the switching field. The MFM images show well-defined domain structures which are periodic in nature. The micromagnetic simulations indicate that the magnetization reversal of such a structure proceeds by formation and annihilation of domain walls, which were equally manifested by the field-dependent MFM images. The observed changes in the magnetic properties are strongly related to both the patterning that hinders the domain-wall motion and to the magneto-anisotropic bilayered structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.254.2-254.2
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• 2014

The Transmission Fourier Transform Infrared spectroscopy (FTIR) of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000~2300 cm-1. It indicated that the existence of many silicon phases and defect sources in the matrix of the SiOx films. The total hysteresis width is the sum of the flat band voltage shift (${\Delta}VFB$) due to electron and hole charging. At the range voltage sweep of ${\pm}15V$, the ${\Delta}VFB$ values increase of 0.57 V, 1.71 V, and 13.56 V with 1/2, 2/1, and 6/1 samples, respectively. When we increase the gas ratio of SiH4/N2O, a lot of defects appeared in charge storage layer, more electrons and holes are charged and the memory window also increases. The best retention are obtained at sample with the ratio SiH4/N2O=6/1 with 82.31% (3.49V) after 103s and 70.75% after 10 years. The high charge storage in 6/1 device could arise from the large amount of silicon phases and defect sources in the storage material with SiOx material. Therefore, in the programming/erasing (P/E) process, the Si-rich SiOx charge-trapping layer with SiH4/N2O gas flow ratio=6/1 easily grasps electrons and holds them, and hence, increases the P/E speed and the memory window. This is very useful for a trapping layer, especially in the low-voltage operation of non-volatile memory devices.