• 제목/요약/키워드: lapping

검색결과 175건 처리시간 0.046초

다구찌 방법에 의한 IED 초정밀 래핑의 최적 가공에 관한 연구 (A Study on the Optimal Machining of the IED Ultra-precision Lapping by Taguchi Method)

  • 황성철;김백겸;원종구;이은상
    • 한국공작기계학회논문집
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    • 제17권4호
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    • pp.29-34
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    • 2008
  • Application of ceramic has increased due to excellent mechanical properties, and machining of ceramic has demanded gradually a precision surface machining. For decreasing the surface roughness, the control of IED lapping parameters is very important. This paper deal with the analysis of the process parameters such as applied forces, percentage of h-BN and IED lapping time, developed based on Taguchi method. Also, SEM was used for monitoring of a machinable ceramic surface.

고정 입자 정반을 이용한 사파이어 기판의 연마 특성 연구 (Study on the Lapping Characteristics of Sapphire Wafer by using a Fixed Abrasive Plate)

  • 이태경;이상직;조원석;정해도;김형재
    • Tribology and Lubricants
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    • 제32권2호
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    • pp.44-49
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    • 2016
  • Diamond mechanical polishing (DMP) is a crucial process in a sapphire wafering process to improve flatness and achieve the target thickness by using free abrasives. In a DMP process, material removal rate (MRR) is a key factor to reduce process time and cost. Controlling mechanical parameters, such as velocity and pressure, can increase the MRR in a DMP process. However, there are limitations of using high velocities and pressures for achieving a high MRR owing to their side effects. In this paper, we present the lapping characteristics and improvement of MRR by using a fixed abrasive plate through an experimental study. The change in MRR as a function of velocity and pressure follows Preston's equation. The surface roughness of a wafer decreases as the plate velocity and pressure increases. We observe a sharp decrease in MRR over the lapping time at a high velocity and pressure in the velocity and pressure test. An analysis of surface roughness (Rq and Rpk) indicates that wear of abrasives decreases the MRR sharply. In order to investigate the effect of abrasive wear on the MRR, we utilize a cutting fluid and a rough wafer. The cutting fluid delays the wear of abrasives resulting in improvement of MRR drop. The rough wafer maintains the MRR at a stable rate by self-dressing.

정반 그루브의 형상치수가 사파이어 기판의 연마특성에 미치는 영향 (Effects of Groove Shape Dimension on Lapping Characteristics of Sapphire Wafer)

  • 이태경;이상직;정해도;김형재
    • Tribology and Lubricants
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    • 제32권4호
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    • pp.119-124
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    • 2016
  • In the sapphire wafering process, lapping is a crucial operation in order to reduce the damaged layer and achieve the target thickness. Many parameters, such as pressure, velocity, abrasive, slurry and plate, affect lapping characteristics. This paper presents an experimental investigation on the effect of the plate groove on the material removal rate and roughness of the wafer. We select the spiral pattern and rectangular type as the groove shapes. We vary the groove density by controlling the groove shape dimension, i.e., the groove width and pitch. As the groove density increases to 0.4, the material removal rate increases and gradually reaches a saturation point. When the groove density is low, the pressing load is mostly supported by the thick film, and only a small amount acts on the abrasives resulting to a low material removal rate. The roughness decreases on increasing the groove density up to 0.3 because thick film makes partial participations of large abrasives which make deep scratches. From these results, we could conclude that the groove affects the contact condition between the wafer and plate. At the same groove density, the pitch has more influence on reducing the film thickness than the groove width. By decreasing the groove density with a smaller pitch and larger groove width, we could achieve a high material removal rate and low roughness. These results would be helpful in understanding the groove effects and determining the appropriate groove design.

Investigating Structural Stability and Constructability of Buildings Relative to the Lap Splice Position of Reinforcing Bars

  • Widjaja, Daniel Darma;Rachmawati, Titi Sari Nurul;Kwon, Keehoon;Kim, Sunkuk
    • 한국건축시공학회지
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    • 제23권3호
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    • pp.315-326
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    • 2023
  • The design principles and implementation of rebar lap splice in architectural structures are governed by building regulations. Nevertheless, the minimization of rebar-cutting waste (RCW) is often impeded by the mandatory requirements pertaining to the rebar lapping zone as prescribed in design codes. In real-world construction scenarios, compliance with these rules often falls short due to hurdles concerning productivity, quality, safety, time, and cost. This discrepancy between code stipulations and on-the-ground construction practices necessitates an academic exploration. The goal of this research was to delve into the effect of rebar lap splice placement on the robustness and constructability of building edifices. The study initially took on a review of the computation of rebar lapping length and the rules revolving around the lapping zone. Following this, a structural robustness and constructability examination was undertaken, focusing on adherence to the lap splice zone. The interpretations and deductions of the research led to the following insights: (1) the efficacy of rebar lap splice is not solely contingent on the moment, and (2) the implementation of rebar lap splice beyond the specified zone can match the structural integrity and robustness of those confined within the designated area. As a result, the constraints on the rebar lapping zone ought to be revisited and possibly relaxed. The conclusions drawn from this research are anticipated to reconcile the disconnect between building codes and practical construction conditions, furnishing invaluable academic substantiation to further the endeavor of achieving near-zero RCW.

경도 기준편의 경도 균일성 향상을 위한 열처리 (Heat Treatment for Improvement of Hardness Uniformity of Standard Hardness Blocks)

  • 한준희;황농문;김종집;문한규
    • 열처리공학회지
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    • 제2권2호
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    • pp.33-37
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    • 1989
  • In order to improve hardness uniformity of standard-hardness blocks. experimental procedure was designed using Taguchi Method. For this purpose the following factors were studied: austenitizing temperature, tempering condition, grinding condition, subzero treatment, lapping time, $15{\mu}m$ polishing time, final polishing time. These factors were processed and then ten hardness values were measured on each specimen. SN (signal to noise) ratio for each condition was calculated with standard variations of these values. Finally, from the calculated value of ANOVA on SN ratios, the lapping time was found to be the main factor Better uniformity with longer lapping time implies that residual stress that was formed after quenching is a dominent parameter that affects on the uniformity of hardness. Therefore, step-quenching method was adapted to minimize the residual stress. By this modification of quenching procedure, the hardness uniformity was improved remarkably and the yield ratio was increased from 55% to 88%.

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IED 초정밀 래핑을 통한 $Si_3N_4$/h-BN의 표면특성 분석 (Analysis of Surface Characteristics in the $Si_3N_4$/h-BN Ceramic by IED Ultra-Precision Lapping)

  • 황성철;이정택;이은상;조명우;조원승
    • 한국정밀공학회지
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    • 제25권7호
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    • pp.47-54
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    • 2008
  • Recently, application of ceramics has increased gradually due to excellent mechanical properties. Si3n4-BN ceramic which is one of ceramics is very hard and has superior resistance against volatile temperature and wear. However, extremely high hardness of the $Si_3N_4-BN$ ceramic makes conventional machining very difficult. Therefore, the use of machinable ceramic has been in a poor because of difficult industrial processes in spite of many advantages. And so new technology being called IED(In-process electrolytic dressing) was introduced to solve this problem. The aim of this study is to determine the machining characteristics in terms of pressurized weight to the workpiece and the influence with h-BN content using IED lapping system. Also, Acoustic Emission (AE) is used for the monitoring of surface characteristics.

광반도체용 사파이어웨이퍼 기계연마특성 연구 (A Study on the Micro-lapping process of Sapphire Wafers for optoelectronic devices)

  • 황성원;신귀수;김근주;서남섭
    • 한국정밀공학회지
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    • 제21권2호
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    • pp.218-223
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    • 2004
  • The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.