• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.374-377
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• 2003

Sol-gel processing of BaTiO$_3$ ceramics doped with La(0.01-1.00 at.%) were prepared from metal barium, titanium n-butoxide and lanthanum isopropoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results suggested that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of BaTiO$_3$ powders and sintering conditions used.

• Journal of information and communication convergence engineering
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• 제1권1호
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• pp.31-34
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• 2003

Sol-gel processing of $BaTiO_{3}$ ceramics doped with La (0.01∼1.00 at.%) were prepared from metal barium, titanium n-butoxide and lanthanum isopropoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results suggested that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of $BaTiO_{3}$ powders and sintering conditions used.

• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.18-21
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• 2003

Sol-gel processing of $BaTiO_3$ ceramics doped with La(0.01-1.00 at. $\%$) were prepared from metal barium, titanium n-butoxide and lanthanum iso-propoxide. Characterization of the sol-gel-derived powder using XRD, SEM is also reported. The obtained results showed that insulator to semiconductor transition for highly donor-doped barium titanate was closely related to the incorporation of donor into the grains and to the resultant grain size, which were significantly affected by the sinterability of $BaTiO_3$ powders and sintering conditions used.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.132.4-132
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• 1998

• 한국결정성장학회지
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• 제23권1호
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• pp.14-19
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• 2013

본 연구팀에서는 층상형 페로브스카이트 구조를 갖는 Ruddlesden-Popper 구조의 $K_2La_2Ti_3O_{10}$의 박리화를 통해 Aurivillius 구조의 $Bi_{4-x}La_xTi_3O_{12}$(x~2) 페로브스카이트 산화물을 성공적으로 합성하였다. 박리화된 란타늄 티타네이트 나노시트는 BiOCl 나노결정구조와 반응시켜 $Bi_{4-x}La_xTi_3O_{12}$(x~2) 결정을 얻어내었다. 박리화된 나노시트 현탁액은 $K_2La_2Ti_3O_{10}$으로부터 수소화된 $H_2La_2Ti_3O_{10}$의 층간에 에틸아민을 삽입시킴으로써 얻어내었다. 투과전자현미경(TEM) 분석을 통해, 란타늄 티타네이트가 에틸아민에 의해 박리화된 것을 확인할 수 있었다. X-선 회절분석(XRD)을 통해, 박리화된 란타늄 티타네이트와 BiOCl의 재적층과정을 거쳐 $700^{\circ}C$ 이상의 열처리 조건에서 $Bi_{4-x}La_xTi_3O_{12}$(x~2)로 형성된 것을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.202.1-202.1
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• 2014

최근 대용량 에너지 저장장치로 사용하고자 하는 리튬-공기전지는 리튬 음극과 액체 전해질 사이의 화학적 불안정성이 문제가 되고 있다. 또한 리튬이온전지는 액체전해질의 사용으로 인해 폭발 등의 안정성 문제가 대두되고 있는 실정이다. 때문에 리튬-공기전지에서 리튬 음극을 액체 전해질로부터 보호할 수 있으며, 리튬이온전지의 액체전해질과 대체하였을 때 전극과도 안정한 고체전해질의 연구가 필요하다. 고체전해질은 구조적으로 crystalline, glassy, 폴리머로 나눌 수 있는데, 이 중 crystalline 구조의 고체전해질은 glassy 및 폴리머 고체전해질에 비해 상온에서 비교적 이온전도도가 높다고 알려져 있다 [1]. 그러나 이온전도도가 높은 황화물 및 질화물 고체전해질은 수분에 민감한 반면 [2,3], 산화물 계열의 물질은 안정할 것으로 예상된다. 본 연구에서는 이온전도도가 높은 산화물인 lithium lanthanum titanate ($Li_{0.5}La_{0.5}TiO_3$, LLTO)를 고체전해질로 선정하여 다양한 환경에서 화학적 안정성에 관해 연구하였다. LLTO와 각종 용액과의 화학적 안정성을 살펴보기 위해 고체전해질을 DI water, 1 M $LiPF_6$ Ethylene Carbonate (EC)-Dimethyl Carbonate (DMC) (50:50 vol.%), 0.57 M LiOH (pH=13), 0.1 M HCl (pH=1)에 immersion하고 무게, 표면형상, 상(phase), 이온전도도 등의 변화를 관찰하였다. 또한 LLTO와 전극간의 반응성을 알아보기 위해 LLTO 분말과 음극물질인 $Li_4Ti_5O_{12}$ 및 양극물질인 $LiCoO_2$ 분말을 혼합한 후 $300^{\circ}C{\sim}700^{\circ}C$의 온도범위에서 열처리하여 반응을 가속화 한 후 상변화 현상을 살펴보았다.

• 한국재료학회지
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• 제34권5호
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• pp.242-246
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• 2024

La modified lead zirconate titanate ceramics (Pb_0.92La_0.08)(Zr_0.95Ti_0.05)O₃ = PLZT-8/95/5 were prepared using the conventional solid state reaction method in order to investigate the complex impedance characteristics of the PLZT-8/95/5 ceramic according to temperature. The complex impedance in the PLZT-8/95/5 ceramic was measured over a temperature range of 30~550 ℃ at several frequencies. The complex dielectric constant anomaly of the phase transition was observed near T_U1 = 179 ℃ and T_U2 = 230 ℃. A remarkable diffuse dielectric constant anomalous behaviour of the complex dielectric constant was found between 100 ℃ and 550 ℃. The complex impedance spectra below and above T_U1 and T_U2 were fitted by the superposition of two Cole-Cole types of impedance relaxations. The fast component in the higher frequency region may be due to ion migration in the bulk, and the slow component in the lower frequency region is interpreted to be the formation and migration of ions at the grain boundary or electrode/crystal interfacial polarization.

• 한국세라믹학회지
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• 제29권11호
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• pp.870-876
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• 1992

Lead lanthanum zirconate titanate (PLZT, 6/65/35) powders, crack-free and dense thin films have been prepared by polymeric sol-gel process. Pyrolysis of the gel, crystallization and optical transmittance behavior of the PLZT thin film onto sapphire substrate have been studied. Esterification occurs during synthesis of PLZT complexation. Crystalline Pb phase was transiently formed near 450$^{\circ}C$. Content of perovskite phase in the films were increased with increasing thickness of film, but the kinetics of formation of perovskite phase in films was slower than that of powders. Transmittance of the films was decreased with increasing the temperature of heat treatment. Ferroelectric hysteresis loop measurements indicated increments of remanent polarization and coercive field for plenty more of perovskite phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• 전자공학회논문지A
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• 제33A권2호
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• pp.87-95
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• 1996

We have studied the effects of La concentration on the optical and electrical properties of lead lanthanum titanate (PLT) thin films by using sol-gel method. Both the optical and electrical properties are greatly affected by the La concentration. The refreactiv eindices of the films varied from 2.23 to 1.93 with varying La concentration in the range from 15 to 33 mol%. The dielectric constants of the films vary form 340 to 870 with varying La concentration in the range form 15 to 33 mol%. Hysteresis loop becomes slimmer with the increase of La concentration form 15 to 28mol% and little fatter again with the increase of La concentration form 28 to 33 mol%. Among the films investigated in this research, PLT(28) thin film shows the best dielectric properties for the application to the dielectrics of ULSI DRAM's. At the frequency of 100Hz, the dielectric constant and the loss tangent of PLT(28) thin films are 940 and 0.08 respectively. Its leakage current density at 1.5${\times}10^{5}$V/cm is 1${\times}10^{-6}A/cm^{2}$. The comparision between the simulated and the experimental curves for the switching transient characteristics shows that PLT (28) thin films behaves like normal dielectrics.