• Restorative Dentistry and Endodontics
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• v.15 no.1
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• pp.107-119
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• 1990

The purpose of this study was to evaluate the marginal adaptability of the amalgam restorations in applying the cavity varnish (Copalite$^{(R)}$) and dentin bonding agent (Scotchbond 2$^{(R)}$) under the scanning electron microscope. For this study, eighteen sound extracted human molars were selected. Class I cavities in 12 teeth and class V cavities in 6 teeth were prepared using an air turbine with No. 701 tungsten carbide bur and finished using a low speed handpiece with No. 557 fissure bur. The prepared specimens were then divided into three groups including 4 class I cavities and 2 class V cavities in each group and restored as follows ; Group I. All the prepared cavities were restored with amalgam only (Control). Group II. Two layers of Copalite$^{(R)}$ cavity varnish were applied to the cavities with a gentle stream of air after each application and cavities were restored with amalgam. Group III. The enamel cavity margins were etched with 37% phosphoric acid gel for 60 sec., rinsed for 30 sec. and dried. One layer of visible lightcured Scotchbond Dental Adhesive$^{(R)}$ was applied and immediately cured for 20 seconds with visible light-cure unit and cavities were restored with amalgam. All the specimens were cut at the neck of the teeth and the occlusal halves of specimens were sectioned buccolingually in the longitudinal axis centering the amalgam restorations, using the disk. The cut specimens were ground with sandpapers (400, 600, 800, 1000 grit), and cleaned for 5 minutes in the ultrasonic cleaner (Brason Co. U.S.A.). In the cut surfaces, the amalgam - tooth interfaces were examined under the scanning electron microscope (JSM, 35C type, JEOL). The obtained results were as follows ; 1. The amalgam-tooth interfaces were reduced more significantly in the Copalite$^{(R)}$ and Scotchbond 2$^{(R)}$ application group than in the control group. 2. In the class I cavities, the Scotchbond 2$^{(R)}$ application group showed the findings similar to the Copalite$^{(R)}$ application group in the cavity floor, and the marginal adaptability was better in the side wall than in the cavity floor. 3. In the class I cavities, the Scotchbond 2$^{(R)}$ application group showed better marginal adaptability in the occlusal margin than in the gingival margin. 4. The marginal adaptability was in the order of the Scothbond 2$^{(R)}$ application group, the Copalite$^{(R)}$ application group and the control group.

• Resources Recycling
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• v.26 no.6
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• pp.65-72
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• 2017

APT (Ammonium paratungstate) is widely used in various industries such as metal cutting tools, drill bits, mining tools, and military inorganic materials. In order to produce high purity APT(S), an impurity purification step in an aqueous $Na_2WO_4$ convert $H_2WO_4$ solution is required. It is difficult to remove impurity Na of 200 ppm or less when $H_2WO_4(S)$ is prepared by adding HCl(Aq) to an aqueous solution of $Na_2WO_4$, which is a well-known conventional wet method. However, in this study, a more economical and efficient method of removing Na through electrodialysis using a cationic membrane was studied. A large amount of Na in aqueous solution of $H_2WO_4$ due to $Na_2CO_3(S)$ which was added to dissolve waste tungsten carbide drill and scrap was removed to 20ppm or less through electrodialysis process, and it was confirmed that the effect of Na removal was great when using electrodialysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.362-362
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• 2010

Today, vast attention has been paid to periodic arrays of nanostructures due to their potential for applications such as memory with huge storage density. Such application requires large-scale fabrication of well ordered nano-sized structures. One of the most widely used methods for the ordered nanostructures is lithography. This top-down process, however, has the limit to reduce size. Here the promising alternative is the self-organization of ordered nano-sized structures such as large scale 2d carbon-induced reconstructions on W(110). In the present study, we report on the first well-resolved atomic resolution STM studies of the well-known R($15{\times}3$) and R($15{\times}12$) carbon induced reconstruction of the W(110). From the atomic image of R($15{\times}3$) for different values of tunneling gap resistance, we can tell there are no missing atoms in unit cells of R($15{\times}3$) and some atomic displacements are substantial from the clean W(110), even though not all the imaged position of atoms correspond to tungsten, but may include those of carbon. We are considering two cases; First case is related to lattice deformation, or top layer of W(110) is deformed in the process of relief of strain caused by random inserting of carbon atoms possibly in the interstitial position. In the second case, R($15{\times}3$) unit cell results from a coincidence lattice between clean W(110) substrate and tungsten carbide overlayer which has rectangular atomic arrangement and giving R($15{\times}3$) coincidence lattice. beta-W2C showing rectangular unit cell should be a candidate. Further, we report on new reconstructions. Unlike the well-known R($15{\times}12$) consisting of two parts, two inner structures between two "Backbone" structures. The new reconstruction, which we found for the first time, contains more parts between the "Backbone"s. Sometimes we can observe the reconstruction consists of only inner parts without "Backbone" parts. Thus, the observed reconstruction can be built by constructing of two types of "Lego"-like block. Moreover, the rectangle shape of "Backbone" transform to parallelogram-like shape over time, the so-called wavy-R($15{\times}12$). Adsorption of hydrogen can be the reason for this transformation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.332-336
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• 2024

High-energy bandgap material silicon carbide (SiC) is gaining attention as a next-generation power semiconductor material, and in particular, SiC-based MOSFETs are developed as representative power semiconductors to increase the breakdown voltage (BV) of conventional planar structures. However, as the size of SJ (Super Junction) MOSFET devices decreases and the depth of pillars increases, it becomes challenging to uniformly form the doping concentration of pillars. Therefore, a structure with different doping concentrations segmented within the pillar is being researched. Using Silvaco TCAD simulation, a SJ VVD (vertical variation doping profile) MOSFET with three different doping concentrations in the pillar was studied. Simulations were conducted for the width of the pillar and the doping concentration of N-epi, revealing that as the width of the pillar increases, the depletion region widens, leading to an increase in on-specific resistance (R_on,sp) and breakdown voltage (BV). Additionally, as the doping concentration of N-epi increases, the number of carriers increases, and the depletion region narrows, resulting in a decrease in R_on,sp and BV. The optimized SJ VVD MOSFET exhibits a very high figure of merit (BFOM) of 13,400 KW/cm², indicating excellent performance characteristics and suggesting its potential as a next-generation highperformance power device suitable for practical applications.

• Journal of the Korea institute for structural maintenance and inspection
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• v.23 no.6
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• pp.92-98
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• 2019

In this study, we developed a repair material incorporating PVA powder resin and nylon fiber into cemented carbide used in the existing field to improve adhesion performance and water tightness with existing concrete. Flexural behavior evaluation was performed. The main experimental variables were PVA powder resin, nylon fiber mixing rate and damage type, and performance tests were conducted to evaluate compressive strength and flexural behavior after repairing materials. It was found that all formulations fully satisfied the required performance of the repair material. The flexural strength test results of the repaired tube specimens showed that the performance of the repaired materials was maximized when the nylon fiber was added and the PVA powder was added in an appropriate amount. The flexural behavior of all the specimens showed the flexural behavior of the structural members with a low rebar ratio, suggesting that the amount of iron wire in the domestic fume pipe was somewhat insufficient. That is, it was confirmed that the amount of reinforcement of the steel wire was somewhat small, so that the concrete was cracked before the behavior of the concrete and the steel wire reached the extreme state, and the concrete was immediately destroyed beyond the tensile strength of the concrete.

• The Journal of Korean Academy of Prosthodontics
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• v.17 no.1
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• pp.23-34
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• 1979

In this study, the adhesive strength of three commercial polycarboxylate cements to ten types of dental casting alloys, such as gold, palladium, silver, indium, copper, nickel, chromium, and human enamel and dentine were measured and compared with that of a conventional zinc phosphate cement. The $8.0mm{\times}3.0mm$ cylindrical alloy specimens were made by casting. The enamel specimens were prepared from the labial surface of human upper incisor, and the dentine specimens were prepared from the occulusal surface of the human molar respectively. Sound extracted human teeth, which had been kept in a fresh condition since, extraction, were mounted in a wax box with a cold-curing acrylic resin to expose the flattened area. The mounted teeth were then placed in a Specimen Cutter (Technicut) and were cut down under a water spray, and then the flat area on the all specimens were ground by hand with 400 and 600 grit wet silicone carbide paper. Two such specimens were then cemented together face-to-face with freshly mixed cement, and moderate finger pressure was applied to squeeze the cement to a thin and uniform film. All cemented specimens were then kept in a thermostatic humidor cabinet regulated at $23{\pm}2^{\circ}C.$ and more than 95 per cent relative humidity and tested after 24 hours and 1 week. Link chain was attached to each alloy specimen to reduce the rigidity of the jig assembly, and then all the specimens were mounted in the grips of the Instron Universal Testing Machine, and a tensile load was delivered to the adhering surface at a cross head speed of 0.20 mm/min. The loads to which the specimens were subjected were recorded on a chart moving at 0.50 mm/min. The adhesive strength was determined by measuring the load when the specimen separated from the cement block and by dividing the load by the area. The test was performed in a room at $23{\pm}2^{\circ}C.$ and $50{\pm}10$ per cent relative humidity. A minimum of five specimens were tested each material and those which deviated more than 15 per cent from the mean were discarded and new specimens prepared. From the experiments, the following results were obtained. 1) It was found that the adhesive strength of the polycarboxylate cement to all alloys tested was considerably greater than that of the zinc phosphate cement. 2) The adhesive strength of the polycarboxylate cements was superior to the non precious alloys, such as the copper, indium, nickel and chromium alloys, but it was inferior to the precious gold, silver and palladium alloys. 3) Surface treatment of the alloy was found to be an important factor in achieving adhesion. It appears that a polycarboxylate cement will adhere better to a smooth surface than to a rough one. This contrasts with zinc phosphate cements, where a rough helps mechanical interlocking. 4) The adhesion of the polycarboxylate cement with enamel was found superior to its adhesion with dentine.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.225-229
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• 2011

Most of the silicon cutting methods using the multi-wire with the slurry injection have been used for wafers of the crystalline solar cell. But the productivity of slurry injection cutting type falls due to low cutting speeds. Also, the direct contact with the metal wire and silicon block increases the concentration of metallic impurities in the wafer's surface. In addition, the abrasive silicon carbide (SiC) generates pollutants. And production costs are rising because it does not re-use the worn wire. On the other hand, the productivity of the cutting method using the diamond coated wire is about 2 times faster than the slurry injection cutting type. Also, the continuous cutting using the used wire of low wear is possible. And this is a big advantage for reduced production costs. Therefore, the cutting method of the diamond coated wire is more efficient than the slurry injection cutting technique. In this study, each cutting type is analyzed using the surface characteristics of the solar wafer and will describe the effects of the manufacturing process of the solar cell. Finally, we will suggest improvement methods of the solar cell process for using the diamond cutting type wafer.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of dental hygiene science
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• v.11 no.5
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• pp.431-436
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• 2011

The aim of this study was to compare the effects of the short-term use of the desensitizing dentifrices marketed in Korea in vitro. Fifty human dentine specimens were wet ground with silicone carbide paper and etched with 6% citric acid for 90 seconds to allow complete opening of the dentinal tubule. Ten specimens from each group were brushed for 50 and 150 strokes with a V8 Cross Brushing Machine(Sabri Co., U. S. A). All the specimens were evaluated by SEM(${\times}3000$). The degree of occlusion of the dentinal tubules was quantified using an image analyzer. The results were analyzed by one-way ANOVA and Tukey's multiple comparisons using Window SPSS. The dentifrices containing nano-carbonate apatite, potassium nitrate and hydroxyapatite showed significantly higher occlusion effects than the other dentifrices after toothbrushing for 50 strokes(p<0.05). The Sensodyne freshmint$^{(R)}$dentifrice showed 34% fewer open tubular areas compared with the Sensodyne original$^{(R)}$dentifrice for 50 strokes. According to the short-term use of desensitizing dentifrices, the dentifrices containing nano-carbonate apatite, potassium nitrate and hydroxyapatite were most effective in occluding the dentinal tubules.

• Journal of Mechanical Science and Technology
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• v.18 no.5
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• pp.770-779
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• 2004

This paper describes the micro cutting of wear resistant tungsten carbides using PCD (Poly-Crystalline Diamond) cutting tools in performance with SEM (Scanning Electron Microscope) direct observation method. Turning experiments were also carried out on this alloy (V50) using a PCD cutting tool. One of the purposes of this study is to describe clearly the cutting mechanism of tungsten carbides and the behavior of WC particles in the deformation zone in orthogonal micro cutting. Other purposes are to achieve a systematic understanding of machining characteristics and the effects of machining parameters on cutting force, machined surface and tool wear rates by the outer turning of this alloy carried out using the PCD cutting tool during these various cutting conditions. A summary of the results are as follows: (1) From the SEM direct observation in cutting the tungsten carbide, WC particles are broken and come into contact with the tool edge directly. This causes tool wear in which portions scrape the tool in a strong manner. (2) There are two chip formation types. One is where the shear angle is comparatively small and the crack of the shear plane becomes wide. The other is a type where the shear angle is above 45 degrees and the crack of the shear plane does not widen. These differences are caused by the stress condition which gives rise to the friction at the shear plane. (3) The thrust cutting forces tend to increase more rapidly than the principal forces, as the depth of cut and the cutting speed are increased preferably in the orthogonal micro cutting. (4) The tool wear on the flank face was larger than that on the rake face in the orthogonal micro cutting. (5) Three components of cutting force in the conventional turning experiments were different in balance from ordinary cutting such as the cutting of steel or cast iron. Those expressed a large value of thrust force, principal force, and feed force. (6) From the viewpoint of high efficient cutting found within this research, a proper cutting speed was 15 m/min and a proper feed rate was 0.1 mm/rev. In this case, it was found that the tool life of a PCD tool was limited to a distance of approximately 230 m. (7) When the depth of cut was 0.1 mm, there was no influence of the feed rate on the feed force. The feed force tended to decrease, as the cutting distance was long, because the tool was worn and the tool edge retreated. (8) The main tool wear of a PCD tool in this research was due to the flank wear within the maximum value of $V_{max}$ being about 260 $\mu\textrm{m}$.