• Journal of Radiation Protection and Research
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• v.36 no.3
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• pp.168-173
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• 2011

This study investigated characteristics of dose distribution at junction field of X-ray and electron beams according to the method for fabricating the insert block on the electron cone. Insert block were fabricated to the divergency cutout block and the straight cutout block. For the 6 MV X-ray and 10 MeV nominal energy of electron beam, we was adjacent to the light field of X-ray and electron beam at a surface of matrix chamber and measured to beam profile of abutted field in the 0, 1, 2, 3 cm measurement depth. As a result, characteristics of dose distribution at junction field, straight block was existent that over dose area exceed the give dose more than 5% and under dose area with a rapid change in dose distribution. However, divergency block had remarkably decreased the over dose area caused by the lateral scattering effects of decrease, and being existed uniformity dose distribution in the junction field. Therefore, divergency block were the benefits of radiation dose delivery, in order to applied the clinical, measurement of electron beams according to the fabrication method of the block should be considered carefully.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.311-314
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• 2005

We investigated the composition dependence of the tunneling magnetoresistance (TMR) behavior and the stability of the magnetic tunnel junctions (MTJs) with TiAlOx barrier and the microstructural evolution of TiAl alloy films. The TMR ratio increased up to $49\%$ at $5.33\;at\%$ Ti. In addition, a significant tunneling magnetoresistance (TMR) value of $20\%$ was maintained after annealing at $450^{\circ}C$, and the breakdown voltage ($V_B$) of and 1.35 V were obtained in the MTJ with $5.33\;at\%$ Ti-alloyed AlOx barrier. These results were closely related to the enhanced quality of the barrier material microstructure in the pre-oxidation state. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal and electrical stability of the MTJs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• Journal of radiological science and technology
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• v.21 no.2
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• pp.36-42
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• 1998

Treatment of a large diseased area with electron often requires the use of two or more adjoining fields. In such cases, not only electron beam divergence and lateral scattering but also fields overlapping and separation may lead to significant dose inhomogeneities(${\pm}20%$) at the region of junction of fields. In this study, we made Acrylic Electron Wedges to improve dose inhomogeneities(${\pm}5%$) in these junction areas and to apply it to clinical practices. All measurements were made using 6, 9, 12, 16, 20 MeV Electron beams from a linear accelerator for a $10{\times}10\;cm$ field at 100cm of SSD. Adding a 1 mm sheet of acryl gradually from 1 mm to 15 mm acquires central axis depth dose beam profile and isodose curves in water phantom. As a result, for all energies, the practical range was reduced by approximately the same distance according to the acryl insert, e.g. a 1 mm thick acryl insert reduces the practical range by approximately 1 mm. For every mm thickness of acryl inserted, the beam energy was reduced to approximately 0.2 MeV. These effects were almost Independent of beam energy and field size. The use of Acrylic Electron Wedges produced a small increase(less than 3%) in the surface dose and a small increase(less than 1%) in X-ray contamination. For acryl inserts, thickness of 3 mm or greater, the penumbra width increased nearly linear for all energies and isodose curves near the beam edge were nearly parallel with the incident beam direction at the point of penumbra width($35\;mm{\sim}40\;mm$). We decide heel thickness and angle of the wedge at this point. These data provide the information necessary to design Acrylic Electron Wedge which can be used to improve dose uniformity at electron field junctions and it will be effectively applied to clinical practices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.9
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• pp.10-17
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• 2007

It opens a new horizon on spintronics for the potential application of MTJ as a universal logic element, to employ the magneto-logic in substitution for the transistor-based logic device. The magneto-logic based on the MTJ element shows many potential advantages, such as high density, and nonvolatility. Moreover, the MTJ element has programmability and can therefore realize the full logic functions just by changing the input signals. This magneto-logic using MTJ elements can embody the reconfigurable circuit to overcome the rigid architecture. The established magneto-logic element has been designed and fabricated on a triple-layer MTJ. We present a novel magneto-logic structure that consists of a single layer MTJ and a current driver, which requires less processing steps with enhanced functional flexibility and uniformity. A 4-bit gray counter is designed to verify the magneto-logic functionality of the proposed single-layer MTJ and the simulation results are presented with the HSPICE macro-model of MTJ that we have developed.

• The Journal of Korean Society for Radiation Therapy
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• v.10 no.1
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• pp.60-68
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• 1998

Treatment of a large diseased area with electron often requires the use of two or more adjoining fields. In such cases, not only electron beam divergence and lateral scattering but also fields overlapping and separation may lead to significant dose inhomogeneities(${\pm}20\%$) at the field junction area. In this study, we made Acrylic Electron Wedges to improve dose homogeneities(${\pm}5\%$) in these junction areas and considered application it to clinical practices. All measurements were made using 6, 9, 12, 16, 20MeV Electron beams from a linear accelerator for a $10{\times}10cm$ field at 100cm SSD. Adding a 1 mm sheet of acryl gradually from 1 mm to 15 mm, We acquired central axis depth dose beam profile and isodose curves in water phantom. As a result, for all energies, the practical range was reduced by approximately the same distance as the thickness of the acryl insert, e.g. a 1 mm thick acryl insert reduce the practical range by approximately 1 mm. For every mm thickness of acryl inserted, the beam energy was reduced by approximately 0.2MeV. These effects were almost independent of beam energy and field size. The use of Acrylic Electron Wedges produced a small increase $(less\;than\;3\%)\;in\;the\;surface\;dose\;and\;a\;small\;Increase(less\;than\;1\%)$ in X-ray contamination. For acryl inserts, thickness of 3 mm or greater, the penumbra width increased nearly linear for all energies and isodose curves near the beam edge were nearly parallel with the incident beam direction, and penumbra width was $35\;mm{\sim}40\;mm$. We decide heel thickness and angle of the wedge at this point. These data provide the information necessary to design Acrylic Electron Wedge which can be use to improve dose uniformity at electron field junctions and it will be effectively applicated in clinical practices.

• Transactions of the Korean Society of Automotive Engineers
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• v.6 no.4
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• pp.108-120
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• 1998

A theoretical study of three-dimensional unsteady compressible non-reacting flow inside double flow of monolith catalytic converter system attached to 6-cylinder engine was performed for the achievement of performance improvement, reduction of light-off time, and longer service life by improving the flow distribution of pulsating exhaust gases. The differences between unsteady and steady-state flow were evaluated through the numerical computations. To obtains the boundary conditions to a numerical analysis, one dimensional non-steady gas dynamic calculation was also performed by using the method of characteristics in intake and exhaust system. Studies indicate that unsteady representation is necessary because pulsation of gas velocity may affect gas flow uniformity within the monolith. The simulation results also show that the level of flow maldistribution in the monolith heavily depends on curvature and angles of separation streamline of mixing pipe that homogenizes the exhaust gas from individual cylinders. It is also found that on dual flow converter systems, there is severe interactions of each pulsating exhaust gas flow and the length of mixing pipe and junction geometry influence greatly on the degree of flow distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.68-69
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• 2007

To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.812-818
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• 2000

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

• Journal of the Korean Magnetics Society
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• v.11 no.5
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• pp.189-195
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• 2001

We prepared TMR junctions of NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) structure on 2.5$\times$2.5 $\textrm{cm}^2$ area Si/SiO$_2$ substrates in order to investigate the uniformity of magnetoresistance(MR) value using a ICP magnetron sputter. Each layer was deposited by the ICP magnetron sputter and tunnel barrier was formed by the plasma oxidation method. We measured MR ratio and resistance of TMR devices with four-terminal probe system by applying external magnetic field. Although we used ICP sputter which is known as superior to make uniform films, the standard variation of MR ratio was 2.72. The variation was not dependent on the TMR devices location of a substrate. We found that MR ratio and spin-flip field (H's) increased as the resistance increased, which may be caused by local interface irregularity of the insulating layer. The variation of resistance value was 64.19 and MR ratio was 2.72, respectively. Our results imply that to improve the insulating layer fabrication process including annealing process to lessen interface modulation in order to mass produce the TMR devices.