• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.113-119
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• 2022

In order to improve the mechanical reliability of next-generation electronic devices including flexible, wearable devices, a high level of mechanical reliability is required at various flexible joints. Organic adhesive materials such as epoxy for bonding existing polymer substrates inevitably have an increase in the thickness of the joint and involve problems of thermodynamic damage due to repeated deformation and high temperature hardening. Therefore, it is required to develop a low-temperature bonding process to minimize the thickness of the joint and prevent thermal damage for flexible bonding. This study developed flexible laser transmission welding (f-LTW) that allows bonding of flexible substrates with flexibility, robustness, and low thermal damage. Carbon nanotube (CNT) is thin-film coated on a flexible substrate to reduce the thickness of the joint, and a local melt bonding process on the surface of a polymer substrate by heating a CNT dispersion beam laser has been developed. The laser process conditions were constructed to minimize the thermal damage of the substrate and the mechanism of forming a CNT junction with the polymer substrate. In addition, lap shear adhesion test, peel test, and repeated bending experiment were conducted to evaluate the strength and flexibility of the flexible bonding joint.

• Journal of the Korean Electrochemical Society
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• v.10 no.1
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• pp.25-30
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• 2007

Proton exchange membrane fuel cell(PEMFC) performance could be affected by various factors such as cell temperature, total pressure, partial pressure of reactants and relative humidity. Hydrogen ion is combined with water to form hydronium ion [$H_3O^+$] and pass through membrane resulting electricity generation. Cooling system is needed to remove heat and other uses on large scale fuel cell. In case that collant conductivity is increased, fuel cell performance could be decreased because produced electricity could be leaked through coolant. In this study, triple distilled water(TDW) and antifreeze solution containing ethylene glycol was used to observe resistance change. Resistance of TDW was taken 28 days to reach preset value, and effect on fuel cell operation was not observed. Resistance of antifreeze solution was not reached to preset value up to 48 days, but performance failure occurred presumably caused by bipolar plate junction resulting stoppage resistance experiment. Generally PEMFC humidification is performed near-saturated operating conditions at various temperatures and pressures, but non-humidifying condition could be applied in small scale fuel cell to improve efficiency and reduce system cost. However, it was difficult to operate large scale fuel cell without humidifying, especially higher than $50{\sim}60^{\circ}C$. In case of small flux such as 0.78 L/min, temperature difference between inlet and outlet was occurred larger than other cases resulting performance decrease. Non-humidifying performance experiments were done at various cell temperature. When both of anode and cathode humidification were removed, cell performance was strongly depended on cell operating temperature.

• Economic and Environmental Geology
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• v.45 no.2
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• pp.71-78
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• 2012

Illite-smectite mixed layers (I-S) occurring authigenically in diagenetic and hydrothermal environments reacts toward more illite-rich phases as temperature and potassium ion concentration increase. For that reason, I-S is often used as geothermometry and/or geochronometry at the field of hydrocarbons or ore minerals exploration. Generally, I-S shows X-ray powder diffraction (XRD) patterns of ultra-thin lamellar structures, which consist of restricted numbers of sillicate layers (normally, 5 ~ 15 layers) stacked in parallel to a-b planes. This ultra-thinness is known to decrease I-S expandability (%S) rather than theoretically expected one (short-stacking effect). We attempt here to quantify the short stacking effect of I-S using the difference of two types of expandability: one type is a maximum expandability ($%S_{Max}$) of infinite stacks of fundamental particles (physically inseparable smallest units), and the other type is an expandability of finite particle stacks normally measured using X-ray powder diffraction (XRD) ($%S_{XRD}$). Eleven I-S samples from the Geumseongsan volcanic complex, Uiseong, Gyeongbuk, have been analyzed for measuring $%S_{XRD}$ and average coherent scattering thickness (CST) after size separation under 1 ${\mu}m$. Average fundamental particle thickness ($N_f$) and $%S_{Max}$ have been determined from $%S_{XRD}$ and CST using inter-parameter relationships of I-S layer structures. The discrepancy between $%S_{Max}$ and $%S_{XRD}$ (${\Delta}%S$) suggests that the maximum short-stacking effect happens approximately at 20 $%S_{XRD}$, of which point represents I-S layer structures consisting of ca. average 3-layered fundamental particles ($N_f{\approx}3$). As a result of inferring the $%S_{XRD}$ range of each Reichweite using the $%S_{XRD}$ vs. $N_f$ diagram of Kang et al. (2002), we can confirms that the fundamental particle thickness is a determinant factor for I-S Reichweite, and also that the short-stacking effect shifts the $%S_{XRD}$ range of each Reichweite toward smaller $%S_{XRD}$ values than those that can be theoretically prospected using junction probability.

• The Journal of the Petrological Society of Korea
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• v.21 no.3
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• pp.335-365
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• 2012

Fission-track (FT) thermochronological records from SE Korean Cretaceous-Paleogene granitic plutons in different fault-bounded blocks reveal contrasting cooling and later thermal histories. Overall cooling patterns are represented by a monotonous (J-shaped) curve in most plutons except some Cretaceous granites retaining a complicated (N-shaped) path due to post-reset re-cooling. Discriminative cooling rates over different temperature ranges can be explained for individual plutons with respect to relative pluton sizes, differences in initial heat loss depending on country rocks, and the presence and proximity of later igneous activity. Even within a single batholith, cooling times for different isotherms were roughly contemporaneous with respect to positions. Insignificant deviations in cooling ages from two different plutons in succession across the Yangsan fault may suggest their contemporaneity before major horizontal fault movement. The extent of later thermal rise recorded locally along the Yangsan and Dongnae fault zones were reached the Apatite Partial Stability Zone ($70-125^{\circ}C$), but did not exceed $200^{\circ}C$. Thermal alteration from fractured zones in the Yangsan-Ulsan fault junction may suggest a thermal reset above $290^{\circ}C$ resulting a complete reset in FT sphene age (31 Ma), caused by a tectonic subsidence in Early Oligocene. A consistency in FT zircon/apatite ages (24 Ma) may imply a sudden rapid cooling over $200-105^{\circ}C$, plausibly related to the abrupt tectonic uplift of the Pohang-Gampo Block including the fault junction in Late Oligocene. A remarkable trend of lower cooling ages for $300-200-100^{\circ}C$ isotherms (i.e., 19% for FT sphene and K-Ar biotite; 20% for FT zircon; 27% for FT apatite) from the east of the Ulsan fault (Pohang-Gampo Block) comparing to the west of the fault may be attributed to retarded cooling times from the Paleogene granites and also reflected by their partially-reduced apatite ages due to later thermal effects.

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.1
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• pp.15-24
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• 2003

The purpose of this study is to investigate the sterilization effect of Er:YAG laser against the intraoral acid producing bacterium, S. mutans, by irradiating the culture solution containing S. mutans KCTC 3065 with Er:YAG laser having a $650{\mu}m$ diameter beam through the non-contact method. We obtained the following results after examining the temperature changes of the culture solution, numbers of bacterial colonies, and acid-producing ability and attaching ability on teeth by measuring the amount of extracellular polysaccharide produced by S. mutans. The number of bacterial colony was decreased in $10{\mu}l$ culture solution irradiated with laser in overall compared to the control solution. The number decreased as the irradiation intensity and pulse repetition rate were larger and as the exposure time was increased. However, it did not change significantly in $100{\mu}l$ culture solution compared to the control solution. Although the acid-producing ability of S. mutans was inhibited for a certain duration after laser irradiation in 10r1 bacterial culture solution, it did not change in $100{\mu}m$ solution compared with the control solution. The amount of extracellular polysaccharide synthesized by S. mutans was partially decreased through laser irradiation in $10{\mu}m$ culture solution but did not change in $100{\mu}m$ culture solution. Based on these findings, we concluded that Er:YAG laser has an sterilization effect on S. mutans in which we presume that the mechanism is through the heat effect rather than the mechanical effect from development of ultrasound.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.13-19
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• 2018

The soldering property of Pb-containing solder(Sn-Pb) and Pb-free solders(Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.7Cu-1.6Bi-0.2In) for solar combiner box module was compared. The solar combiner box module was composed of voltage and current detecting modules, diode modules, and other modules. In this study, solder paste printability, printing shape inspection, solder joint property, X-ray inspection, and shear force measurements were conducted. For optimization of Pb-free soldering process, step 1 and 2 were divided. In the step 1 process, the printability of Pb-containing and Pb-free solder alloys were estimated by using printing inspector. Then, the relationship between void percentages and shear force has been estimated. Overall, the property of Pb-containing solder was better than two Pb-free solders. In the step 2 process, the property of reflow soldering for the Pb-free solders was evaluated with different reflow peak temperatures. As the peak temperature of the reflow process gradually increased, the void percentage decreased by 2 to 4%, but the shear force did not significantly depend on the reflow peak temperature by a deviation of about 0.5 kgf. Among different surface finishes on PCB, ENIG surface finish was better than OSP and Pb-free solder surface finishes in terms of shear force. In the thermal shock reliability test of the solar combiner box module with a Pb-free solder and OSP surface finish, the change rate of electrical property of the module was almost unchanged within a 0.3% range and the module had a relatively good electrical property after 500 thermal shock cycles.

• Journal of Magnetics
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• v.9 no.1
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• pp.17-22
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• 2004

We studied the magnetotransport properties of tunnel junctions with AlO and AlN barriers fabricated using microwave-excited plasma. The plasma nitridation process provided wider controllability than the plasma oxidization for the formation of MTJs with ultra-thin insulating layer, because of the slow nitriding rate of metal Al layers, comparing with the oxidizing rate of them. High tunnel magnetoresistance (TMR) ratios of 49 and 44% with respective resistance-area product $(R{\times}A) of 3 {\times} 10^4 and 6 {\times} 10^3 {\Omega}{\mu}m^2$ were obtained in the Co-Fe/Al-N/Co-Fe MTJs. We conclude that AlN is a hopeful barrier material to realize MTJs with high TMR ratio and low $R{\times}A$ for high performance MRAM cells. In addition, in order to clarify the annealing temperature dependence of TMR, the local transport properties were measured for Ta $50{\AA} /Cu 200 {\AA}/Ta 50 {\AA}/Ni_{76}Fe_{24} 20 {\AA}/Cu 50 {\AA}/Mn_{75}Ir_{25} 100 {\AA}/Co_{71}Fe_{29} 40 {\AA}/Al-O$ junction with $d_{Al}= 8 {\AA} and P_{O2}{\times}t_{0X}/ = 8.4 {\times} 10^4$ at various temperatures. The current histogram statistically calculated from the electrical current image was well in accord with the fitting result considering the Gaussian distribution and Fowler-Nordheim equation. After annealing at $340^{\circ}C$, where the TMR ratio of the corresponding MTJ had the maximum value of 44%, the average barrier height increased to 1.12 eV and its standard deviation decreased to 0.1 eV. The increase of TMR ratio after annealing could be well explained by the enhancement of the average barrier height and the reduction of its fluctuation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.6
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• pp.237-241
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• 2008

Hot-press sintering of AlN ceramics were carried out with $Y_2O_3$ as sintering additive at a sintering temperature $1,750{\sim}1,850^{\circ}C$. The effect of $Y_2O_3$ addition and sintering time on sintering behavior and thermal conductivity of AlN ceramics was investigated. $Y_2O_3$ added AlN showed noticeably higher denazification rate than pure AlN. The thermal conductivity of AlN specimens was promoted by the addition of $Y_2O_3$ in spite of the formation of YAG secondary phase in AlN grain boundaries and grain boundary triple junction because $Y_2O_3$ addition could reduced the oxygen contents in AlN lattice which is primary factor of thermal conductivity. Typically, the thermal conductivity of 5 wt% $Y_2O_3$ added specimen was dramatically improved by the increase of sintering time because the elimination of YAG secondary phases from the grain boundary due to the evaporation, as well as the grain-growth of AlN grains.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.