• 대한전자공학회논문지SD
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• 제47권4호
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• pp.75-87
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• 2010

표준 CMOS 공정에서 제작 가능한 보호용 싸이리스터 소자와 다이오드 소자를 사용하는 RF IC용 두 가지 입력 ESD 보호회로 방식을 대상으로, 2차원 소자 시뮬레이터를 이용하는 DC 해석, 혼합모드 과도해석 및 AC 해석을 통해 보호용 소자내 격자온도 상승 및 입력버퍼단의 게이트 산화막 인가전압 측면에서의 HBM ESD 보호강도에 대한 심도있는 비교 분석을 시도한다. 이를 위해, 입력 ESD 보호회로가 장착된 CMOS 칩의 입력 HBM 테스트 상황에 대한 등가회로를 구성하고, 5가지 HBM 테스트 모드에 대해 최대 6개의 보호용 소자를 포함하는 혼합모드 과도 시뮬레이션을 시행하고 그 결과를 분석함으로써 실제 테스트에서 발생할 수 있는 문제점들에 대한 상세한 분석을 시도한다. 이 과정에서 보호용 소자 내 바이폴라 트랜지스터의 트리거를 수월케 하는 방안을 제안하며, 두 가지 보호회로 방식에서 내부회로의 게이트 산화막 파괴는 보호용 소자 내에 존재하는 NMOS 구조의 접합 항복전압에 의해 결정됨을 규명한다. RF IC용 입력 보호회로로서의 두 가지 보호방식의 특성 차이에 대해 설명하는 한편, 각 보호용 소자와 회로의 설계와 관련되는 유용한 기준을 제시한다.

• Restorative Dentistry and Endodontics
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• 제35권4호
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• pp.257-266
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• 2010

본 연구의 목적은 미성숙 우치를 가타퍼챠 및 다양한 포스트와 코아 시스템을 이용하여 수복한 후 술식에 따른 파절 강도를 측정하였다. 우치의 백악상아경계 상방 8 mm, 하방 12 mm 지점을 절단하여 제작한 미성숙 우치 모델에서 가타퍼챠와 이원중합형 복합레진 LuxaCore로 코어 수복을 시행하거나, 각각 D.T. LIGHT-POST, ParaPost XT 및 다양한 크기의 EverStick Post와 LuxaCore로 수복하였다. 이후 시편을 72시간 동안 증류수에 저장한 후 6,000회의 thermocycling을 진행하였다. 실험적으로 치주인대의 물성을 재현하고, Instron에 시편을 45도로 위치시켜 압축부하를 가해 파절 강도를 측정하고, 파절 부위를 분석하였다. 실험 결과, 포스트를 이용하여 수복하였을 때 파절 강도가 통계적으로 유의하게 증가하였고(p < 0.05), 포스트의 종류 및 적합도는 결과에 통계적으로 유의한 차이를 나타내지 않았다. 대부분의 시편에서 수복 가능한 파절이 나타났으며, 실험군에 따른 파절 부위의 유의한 차이는 나타나지 않았다. 이상의 결과로 볼 때 미성숙 치아의 상기 치근 강화 술식은 치아의 파절 강도를 증가시키고, 포스트의 종류 및 적합도는 파절 저항성에 거의 영향을 미치지 않는 것으로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.27-27
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• 2011

For the design of real applicable molecular devices, current-voltage properties through molecular nanostructures such as metal-molecule-metal junctions (molecular junctions) have been studied extensively. In thiolate monolayers on the gold electrode, the chemical bonding of sulfur to gold and the van der Waals interactions between the alkyl chains of neighboring molecules are important factors in the formation of well-defined monolayers and in the control of the electron transport rate. Charge transport through the molecular junctions depends significantly on the energy levels of molecules relative to the Fermi levels of the contacts and the electronic structure of the molecule. It is important to understand the interfacial electron transport in accordance with the increased film thickness of alkyl chains that are known as an insulating layer, but are required for molecular device fabrication. Thiol-tethered RuII terpyridine complexes were synthesized for a voltage-driven molecular switch and used to understand the switch-on mechanism of the molecular switches of single metal complexes in the solid-state molecular junction in a vacuum. Electrochemical voltammetry and current-voltage (I-V) characteristics are measured to elucidate electron transport processes in the bistable conducting states of single molecular junctions of a molecular switch, Ru(II) terpyridine complexes. (1) On the basis of the Ru-centered electrochemical reaction data, the electron transport rate increases in the mixed self-assembled monolayer (SAM) of Ru(II) terpyridine complexes, indicating strong electronic coupling between the redox center and the substrate, along the molecules. (2) In a low-conducting state before switch-on, I-V characteristics are fitted to a direct tunneling model, and the estimated tunneling decay constant across the Ru(II) terpyridine complex is found to be smaller than that of alkanethiol. (3) The threshold voltages for the switch-on from low- to high-conducting states are identical, corresponding to the electron affinity of the molecules. (4) A high-conducting state after switch-on remains in the reverse voltage sweep, and a linear relationship of the current to the voltage is obtained. These results reveal electron transport paths via the redox centers of the Ru(II) terpyridine complexes, a molecular switch.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.348-348
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• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.

• 한국가축번식학회지
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• 제17권4호
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• pp.339-346
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• 1994

정자의 구조와 기능을 이해하기 위해서는 정자세포구성분의 분리가 필요하다. 본 실험은 동결융해된 한우정액에 다양한 물리·화학적 처리를 하여 효과적인 정자세포구성분의 분리방법을 확립하고자 실시하였다. 물리적 분리방법으로는 vortexing 처리, 26 gauge needle 또는 strained 26 gauge needle을 1ml 주사기에 부착시킨 후 반복된 pumping, 동결보존액없이 반복된 동결융해처리등을 시행하였다. 또한, 화학적인 분리를 위해 trypsin, dithiothreitol, sodium dodecylsulfate, mercaptoethanol 등을 사용하였다. 모든 처리구중에서 가장 효과적인 정자두부와 미부의 절단을 strained 26 gauge needle이 부착된 주사기를 사용한 반복된 pumping에 의해 얻어졌다. 이러한 처리에 의해 95∼100%의 높은 정자구성분의 분리가 이루어졌다. 분리된 정자구성분의 두부표면의 보존여부를 알아보기 위해 250g/ml FITC-UEA 1 염색을 실시하였지만 특별한 두부표면변화는 관찰되지 않았다. 다른 물리적 처리방법들도 높은 정자구성분의 분리결과를 보여주었지만, strained 26 gauge needle를 사용한 방법에 비해서는 분리효율, 시간등 여러면에서 비효율적이었다. 화학적 처리에 의한 정자구성분의 분리결과는 물리적 처리에 비해 효과적이지 못했다. 분리된 정자두부와 미부를 각각 회수하기 위해 sucrose 용액을 2M, 1M, 0.5M, 0.25M 순으로 시험관에 넣은 후 1,000rpm에서 15분간 원심분리한 결과, 1M과 2M의 경계부분에 형성된 정자두부층을 얻을 수 있었다. 정자구성분의 효과적이고 간편한 분리방법이 본 실험에 의해 확립되어졌으며, 위의 방법에 의해 분리, 회수된 정자구성분은 생화학적 연구, 난자활성화기작의 이해등 다양한 응용연구의 기초자료로서 이용될 수 있을 것이다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Restorative Dentistry and Endodontics
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• 제23권2호
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• pp.656-669
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• 1998

Hydrogen peroxide at high concentration during walking bleaching may cause damage to the tooth structure and to the surrounding periodontal tissues and may develop external root resorption. Clinically, It is so important to find a method of prevention or minimization of these complications. The efficacy of various chamber-irrigating agents to eliminate residual hydrogen peroxide after walking bleaching was examined and compared with water rinse in this study. Extracted human 46 premolars without any cementoenamel junction defects were treated endodontically and based with IRM to 1 mm below CEJ and totally bleached 3 times for each tooth with 30% hydrogen peroxide and sodium perborate. Upon completion of the 3rd walking bleaching procedure, the cervical portion and pulp chamber of each group of teeth were irrigated with catalase, 70% ethylalcohol, acetone, and distilled water. And then, a radicular hydrogen peroxide penetration was measured with spectrophotometer immediately after each bleaching and following treatment with each chamber-irrigating agents, and the significance of their eliminating efficacy of residual hydrogen peroxide was analyzed by Kruskal-Wallis test. The results were obtained as follows. 1. Cervical root penetration of hydrogen peroxide was increased as the bleaching procedure was repeated(P<.01). 2. The most effective irrigant that removed residual hydrogen peroxide was the catalase, and the least effective one was water rinsing (P<.01).; there was no significant difference between the acetone and ethanol group. 3. The Irrigation with antioxidant enzyme or water-displacement solutions can eliminate residual oxygen radicals from the pulp chamber effectively after walking bleaching. So, these agents can reduce adverse effects such as cervical external resorption and periapical inflammation and prevent residual $O_2$ from impeding composite resin polymerization, thus increase the bonding strength of composite resin. This, in turn reduces microleakage and discoloration of the esthetic restoration, extending its service-life.

• 한국자기학회지
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• 제11권5호
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• pp.189-195
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• 2001

ICP 마그네트론 스퍼터를 이용하여 2.5$\times$2.5 $\textrm{cm}^2$ 넓이의 열산화막이 형성된 실리콘 기판에 총 14개의 동일한 간격으로 NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) 구조의 junction을 형성하여 자기저항비의 균일성을 알아보았다. 각 층은 ICP 마그네트론 스퍼터를 이용하여 만들고 특히 절연층은 플라즈마 산화법으로 제작하여 TMR 소자를 만들었다. 완성된 각 소자를 외부자기장을 변화시키면서 4단자 측정법으로 기준저항, 자기저항비, 자화반전자장을 측정하였다. 균일한 박막형성에 적합한 ICP스퍼터라도 같은 공정하에서 자기저항비의 표준편차가 2.72 정도의 분포가 있었으며, 위치에 따른 각 기준저항, 자기저항비, 자화반전자장의 유의차는 없었다. 또한 기준저항이 증가함에따라 자기저항비와 자화반전자장이 증가하는 경향이 있었으며, 이러한 현상은 균일하지 못한 절연막의 형성에 기인하는 것으로 판단되었다. 균일한 성막이 가능한 ICP 스퍼터로도 위치별로 절연막층 상태의 국부적 분산에 따라 표준편차가 기준저항의 경우 64.19, 자기저항비의 경우 2.72의 변화가 발생하여 실제적인 소자의 양산을 위해서는 산화막 형성공정의 개선이나 후열처리 등에 의한 균일화 공정이 필요할 것으로 생각되었다.

• Journal of Periodontal and Implant Science
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• 제36권1호
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• pp.27-37
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• 2006

Although the main purpose of periodontal treatment to regenerate is the complete regeneration of periodontal tissue due to periodontal disease, most of the treatment cannot meet such purpose because healing by long epithelial junction. Therefore, diverse materials of resorbable and non-resorbable have been used to regenerate the periodontal tissue. Due to high risk of exposure and necessity of secondary surgical procedure when using non-resorbable membrane, guided tissue regeneration using the resorbable membrane has gain popularity, recently. However, present resorbable membrane has the disadvantage of not having sufficient time to regenerate date to the difference of resorption rate according to surgical site. Meanwhile, other than the structure stability and facile manipulation, acellular dermal matrix has been reported to be a possible scaffold for cellular proliferation due to rapid revascularization and favorable physical properties for cellular attachment and proliferation. The purpose of this study is to estimate the influence of acellular dermal matrix on periodontal ligament, cementum and alveolar bone when acellular dermal matrix is implanted to 1-wall alveolar bone defect. 4 dogs of 12 to 16 month old irrelevant to sex , which below 15Kg of body weight, has been used in this study. ADM has been used for the material of guided tissue regeneration. The 3rd premolar of the lower jaw was extracted bilaterally and awaited for self-healing. subsequently buccal and lingual flap was elevated to form one wall intrabony defect with the depth and width of 4mm on the distal surface of 2nd premolar and the mesial surface of 4th premolar. After the removal of periodontal ligament by root planing. notch was formed on the basal position. Following the root surface treatment, while the control group had the flap sutured without any treatment on surgically induced intrabony defect. Following the root surface treatment, the flap of intrabony defect was sutured with the ADM inserted while the control group sutured without any insertion. The histologic specimen was observed after 4 and 8 weeks of treatment. The control group was partially regenerated by periodontal ligament, new cementum and new alveolar bone. the level of regeneration is not reached on the previous formed notch. but, experimental group was fully regenerated by functionally oriented periodontal ligament fiber. new cementum and new alveolar bone. In conclusion, we think that ADM seems to be used by scaffold for periodontal ligament cells and the matrix is expected to use on guided tissue regeneration.

• 한국자기학회지
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• 제16권6호
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• pp.279-282
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• 2006

비정질 강자성 NiFeSiB 자유층을 갖는 자기터널접합 (MTJ)에 대하여 연구하였다. 비정질 자유층이 MTJ의 스위칭 특성에 미치는 영향을 알아보는데 역점을 두어 기존의 CoFe와 NiFe층 대신에 NiFeSiB 자성층을 사용하였다. $Ni_{16}Fe_{62}Si_{8}B_{14}$는 $Co_{90}Fe_{10}$보다 더 낮은 포화자화도 ($M_{s}:\;800\;emu/cm^{3}$) 그리고 $Ni_{80}Fe_{20}$보다 더 높은 이방성 상수 ($K_{u}:\;2700\;erg/cm^{3}$)를 갖는다. $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(nm)$ 구조는 그 자체의 낮은 포화자화도와 높은 일축 이방성을 가짐으로 인하여 보자력($H_{c}$)을 감소시키고 스위칭 각형을 증가시키게 함으로서 MTJ의 스위칭 특성에 유리한 것으로 조사되었다. 더욱이 미소두께(1 nm)의 CoFe층을 터널장벽/NiFeSiB 경계면에 삽입하면 TMR비와 스위칭 각형이 증가하고 개선되었다.