• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.4
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• pp.251-260
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• 2017

This paper describes the design of a slit on ground plane to improve the axial ratio of the spiral antenna for the NLJD system application. A proposed slit shape located on the ground plane is changed to compare with the archimedean spiral slit shape of the antenna in reference [7]. In order to improve the axial ratio, the slit on the ground plane is divided by the uniform angle and the conductor of position where the current has the opposite direction each other is eliminated. Measured return loss, radiation pattern and gain show a good agreement with the computer simulation results. Even though the proposed slit structure on the ground plane was changed to compare with ones of reference [7], the characteristics such as return loss, radiation pattern and gain are not almost changed and only the axial ratio was remarkably improved at 4.88 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.544-549
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• 2015

Since LEDs (light emitting diodes) have many advantages as a light source in vehicle headlamp, such as good reliability, energy and space saving, and flexible headlamp design. On the other hand, the dependence of its performance and life on temperature have great influence on its practical use. In this study, design and fabrication of heat sink for vehicle LED headlamp were performed using thermally-conductive plastics. This study focused on the effective heat sink structure with limited space in the vehicle LED headlamp. We designed two different prototype of heat sink by thermal simulation using SolidWorks program, which had excellent temperature characteristics. The two different prototype of heat sink were fabricated by injection molding with thermally-conductive plastics. The results showed that LED $T_j$ (junction temperature) of sample B (model 1) and sample C (model 1, 2) was below then $165^{\circ}C$ when applying the thermally-conductive plastics in heat sink of vehicle LED headlamp.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.900-906
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• 2001

We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.9
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• pp.1606-1611
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• 2008

Recently, The diagnosis techniques of electric facilities are developed on live line. This paper describes the discharge characteristics of polymer insulator(EPDM A type). Keeping the facilities in good working order, the goal of this paper will provide the information to enable user to easily judge conditions of facilities on the spot. The performance of polymer insulator is assessed from the KS C IEC 60270 and CEA LWIWG-01(96)(Tracking Wheel Test). As the results, UV generation patterns of polymer insulator grow like a jellyfish shape follow the ramping voltage. Discharging UVs are detected at about 31.25% of breakdown voltage. Just then, dimension of UV image is about $0.84cm^{2}$. The dimension of max. UV image is about $297.4cm^{2}$ at $160kV(V_{bd})$. The position of UV generation due to surface discharge of polymer insulator is the center of insulator in the early, then moved the ground side and the last, UV image moved through the junction part of source side. Surface of aged polymer insulator is cracked and faded due to arc. UV absorption spectrum of polymer insulator are appeared the C-H bond of scissoring vib. at $1014cm^{-1}$ and C=O bond of recombination structure. Also, recombined UV absorption peak such as C-H, N-H, and O-H is detected at the $3321cm^{-1}$. Through the paper, there are inspection data which are the relations between surface discharge of polymer insulator and UV detecting image.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.3
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• pp.1764-1769
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• 2014

Numerical investigations have been conducted on the junction that connect the multi-tubular section and the single shell section in order to evaluate applicability of hybrid sections in wind turbine towers instead of conventional single shell towers. Major characteristics in structural details include extension of multi-tubular member into shell end section, installation of wing stiffeners, and different layout of floor beams. Elastic and nonlinear incremental analyses were conducted to examine stress concentration patterns and ultimate behaviors, respectively. Based on evaluation of structural performance due to vertical and horizontal forces, it has been confirmed that installation of floor beams and wing stiffeners sensitively affect ultimate strength of global wind tower.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.862-868
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• 1996

Cadmium sulfide is commonly used as the window material for thin film solar cells, and can be prepared by several techniques such as sputtering, spray pyrolysis, close spaced sublimation (CSS), thermal evaporation, solution growth methods, etc. In this study, CdS films were deposited by thermal evaporation, close spaced sublimation, and solution growth methods, respectively, and the effects of the methods on physical properties of polycrystalline CdS deposited on ITO/glass were investigated. Also, the effects of variously prepared CdS thin films on the physical properties of CdTe deposited on the CdS were investigated. The thickness of polycrystalline CdS films was maintained at $0.3\mu\textrm{m}$ except for the solution grown CdS when $0.2\mu\textrm{m}$ thick CdS was deposited. After the deposition, all the samples were annealed at $400^{\circ}C$ or $500^{\circ}C$ in H2 atmosphere. To investigate physical properties of the deposited and annealed CdS thin films, UV-VIS spectro-photometry, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES), and cross sectional transmission electron microscopy(XTEM) were used to analyze grain size, crystal structure, preferred orientation, optical properties, etc. The annealed CdS showed the bandedge transition at 510nm and the optical transmittance high than 80% for all of the variously deposited films. XRD results showed that CdS thin films variously deposited and annealed had the same hexagonal structures, however, showed different preferred orientations. CSS grown CdS had [103] preferred orientation, thermally evaporated CdS had [002], and CdS grown by the solution growth had no preferred orientation. The largest grain size was obtained for the CSS grown CdS while the least grain size was obtained for the solution grown CdS. Some of the physical properties of CdTe deposited on the CdS thin film such as grain size at the junction and grain orientation were affected by the physical properties of CdS thin films.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.15-21
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• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.28-29
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• 2000

Optical power splitters and/or couplers are important components for optical signal distribution between channels both in wavelength division multiplexing(WDM) systems and photonic integrated circuits(PICs). Since polarization is usually not known after propagation in an optical fiber, passive WDM components have to be polarization insensitivity, Compared to alternatives such as directional couplers or Y-junction splitters, splitters based on multimode interference(MMI) have found a growing interest in recent yens because of their desirable characteristics, such as compact size, low excess loss, wide bandwidth, polarization independence, and relaxed fabrication tolerances$^{(1)}$ . These devices have been fabricated in polymers, silica, or III-V semiconductor materials. A1 $\times$ 4 MMI power splitter on InP materials that were suitable for application in the 1.55-${\mu}{\textrm}{m}$ region$^{(2)}$ . However, the fabrication process of the structure is too complicated and the photolithography tolerance is very tight. Also, a 1 $\times$ 16 InGaAsP/InP MMI power splitter with an excess loss of 2.2dB and a splitting ratio of 1.5dB was demonstrated by using deep etching$^{(3)}$ . The deep etching of the sidewalls through the entire guide layer of the slab waveguide resulted in a number of drawbacks$^{(4)}$ . (omitted)

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.57-62
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• 1996

To decrease the leakage current of $p^{+}n$ junction diode with hyperabrupt structure, the $3000{\AA}$ polysilicon was deposited on the top of conventional $p^{+}n$ diode and then annealed for 30 minutes at $900^{\circ}C$ in the $N_{2}$ ambient. It was estimated for both $p^{+}n$ diodes with and without polysilicon layer, and the impurity materials of n diffused layer to observe the influence of the polysilicon layer on leakage current characteristics. The leakage current was reduced to the order of 3 by using polysilicon layer. A large number of dislocation loops, which were believed to be generated by As-implanted diffused layer, were found to be removed by using polysilicon through TEM analysis.

• Journal of Crop Science and Biotechnology
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• v.11 no.4
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• pp.237-242
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• 2008

A liguleless mutant, which showed complete loss of lamina joint region at the junction between leaf blade and leaf sheath, was isolated from a Ds insertional mutants derived from the source cultivar, Dongjin. This mutant could not affect other developmental patterns like phyllotaxis. Southern blot analysis, using GUS as a probe, revealed that the liguleless mutant contained three Ds copies transposed in the rice genome. Among the four genomic sequences flanking the Ds, one was mapped in the intergenic region (31661640 - 31661759), and the other two predicted a protein kinase domain (12098980 - 12098667) as an original insertion site within a starter line used for massive production of Ds insertional mutant lines. Another predicted and inserted in first exon of liguleless 1 protein (OsLG1) that was mapped in coding region (LOC_Os04g56170) of chromosome 4. RT-PCR revealed that the OsLG1 gene was not expressed liguleless mutants. Structure analysis of OsLG1 protein revealed that it predicted transcription factor with a highly conserved SBP domain consisting of 79 amino acids that overlapped a nuclear localization signal (NLS). RT-PCR revealed that OsLG1 is mainly expressed in vegetative organs.