• 대한방사선치료학회:학술대회논문집
• /
• 2005.06a
• /
• pp.27-32
• /
• 2005

Electron is used for the treatment of skin cancer, breast cancer, and head and neck cancer in clinic. Our study is performed to check the isodose distribut ion in source surface distance(SSD) and source bolus distance(SBD) setup, nipple influence to isodose distribution of electron, junctional area isodose variation of photon and electron field. Dosimetry is carried out with phantom, acryl, and film as the same condition of treatment setup. $8\%$ of isodose difference is noted with the surface distance(SSD) and source bolus distance(SBD) setup. To reduce the influence of nipple. corresponding volume of bolus should be removed. And bolus covering all the electron field reduced hot and cold spot of junctional area of photon.

• Journal of the Korean Society of Hazard Mitigation
• /
• v.6 no.4 s.23
• /
• pp.49-56
• /
• 2006

The rainfall runoff is drained through sewerage outlet at urban area. But, there is no guideline or standard to install sewerage outlet, so the sewerage outlet are designed or installed by discretion of engineers or constructors. In this paper, for the sake of supporting basic data to design, it would be suggested a guideline for less influenced to flow at the channel flow condition through hydraulic experiment by variation of lateral inflow discharge, sewerage outlet projecting part, sewerage outlet direction and position. Through 10 cases of experiments, it would be less influenced two sewerage outlet at up and down stream than one installed at up or down stream even though the same discharge. And installed conditions which are installed angle and protecting part will be influenced to increase water depth and to decrease velocity at upstream. So when sewerage outlet is installed, it would be try to find a installing way to be less influence with more careful.

• Journal of the Korean Vacuum Society
• /
• v.18 no.2
• /
• pp.116-126
• /
• 2009

It is becoming more difficult to improve the device operating speed by shrinking the size of semiconductor devices. Therefore, for a new leap forward in the semiconductor industry, the advent of silicon opto-electronic devices, i.e., silicon photonics is more desperate. Silicon Avalanche LED is one of the prospective candidates to realize the practical silicon opto-electronic devices due to its simplicity of fabrication, repeatability, stability, high speed operation, and compatibility with silicon IC processing. We conducted the measurement of the electrical characteristics and the observation of the light-emitting phenomena using optical microscopy. We analyzed the influence of the design elements such as the shape of the light-emitting area and the depth of the $n^{+}-p^{+}$ junction with simple device modeling and simulation. We compared the results of simulation and the measurement and explained the discrepancy between the results of the simulation and the measurement, and the suggestions for the improvement were given.