• Journal of Korean Society for Atmospheric Environment
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• v.23 no.6
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• pp.752-759
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• 2007

For an accurate measurement of aerosol particle size distribution using a differential mobility analyser (DMA), a new calculation process, capable of predicting the masses for the various kinds of water cluster ions generated from a bipolar ionizer, was prepared by improving the previous process. The masses for the 5 kinds of positive and negative water cluster ions produced from a SMAC ionizer were predicted by the improved calculation process. The aerosol particle charging ratios calculated by applying the predicted ion masses to particle charging equations were in good accordance with the experimentally measured ones, indicating that the improved calculation process are more reasonable than the previous one in a mass prediction of bipolar water cluster ions.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1993.04a
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• pp.179-179
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• 1993

1. PS및 CP의 flux는 전류의 새기 및 donor의 약물농도에 비래하였다. 2. pH의 flux는 pH가 증가할수록 증가하였으나, CP(pKa=9.2)의 flux는 pH=2에서 최대치를 보였다. 이는 약물의 해리 정도와 H$^{＋}$이온의 mobility, 또 피부의 permselectivity의 balance에 의해 결정된 것으로 생각된다. 3. donor cell에 NaCl을 첨가하면 두 약물 공히, 그러나 특히 PS의 flux가 저하되었다. 이는 두 약물의 이온과 $Na^{＋}$의 mobility차이에 기인한다고 생각된다. 4. PS의 경우 taurodeoxycholate(TDC)같은 음이온을 donor cell에 공존시키면 flux가 감소하였다. 이는 PS와 TDC가 전기적으로 중성인 ion-pair complex를 형성함으로써 PS이온의 유효농도가 감소하기 때문으로 생각된다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.255-258
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• 2006

In this paper, the new method which is monitoring quantity of particles using by ion-counter has been developed. ISPM system is composed by Gerdien type ion-counter (house-made), DC power supply and electrometer. Ion-counter applied positive voltage could detect only positive charged particles. Therefore charged particles to Boltzmann equilibrium distribution or to some identified charge distribution can be detected by ion-counter. Ion-counter could install on the exhaust line of process equipment since pressure loss is structurally low. ISPM system has been certified by comparison with the result of SMPS (Scanning Mobility Particle Sizer) system. The relation coefficiency is above 0.98 about $20{\sim}300nm$ particles with identified charge distribution under $0.1{\sim}10.0$ Torr.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.69.3-69.3
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• 2012

A high-performance low-voltage graphene field-effect transistor (FED array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 and 91 $cm^2/Vs$, respectively, at a drain bias of - I V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.627-628
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• 2005

In recent years, the rapid growth of portable electronic device market requires higher density characteristics of batteries. The speed at which portability and mobility is advancing hinges much on the battery. What is important is this energy source that engineers design handled devices around the battery, rather than the other way around. Much improvement has been made in reducing the power consumption of portable devices. Currently, the most popular secondary battery is Li-ion battery. Li-ion has won the limelight and become the most prominent battery. This paper reviews the prospect and future of the Li-ion battery.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.2
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• pp.140-145
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• 2008

The purpose of this paper is to discuss the fabrication of $\beta$-PVDF($\beta$-Polyvinylidene fluoride, ${\beta}-PVF_2$) organic thin films using the vapor deposition method. Vapor deposition was performed under the following conditions: the temperature of evaporator, the applied electric field, and the pressure of reaction chamber were $270^{\circ}C$, 142.4 kV/cm, and $2.0{\times}10^{-5}\;Torr$, respectively. The molecular structure of the evaporated organic thin films were evaluated by a FT-IR. The results showed that the characteristic absorption peaks of $\beta$-form crystal increase from 72% to 95.5% with an increase in the substrate temperature. In the analysis of the electric characteristics, the abnormal increases in the relative dielectric constant and the dielectric loss factor in the regions of low frequency and high temperature are known to be caused by inclusion of impurity carriers in the PVDF organic thin films. In order to analyze quantitatively the abnormalities in the conductivity mechanism caused by ionic impurities, the product of the ion density and the mobility that affect the electrical property in polymeric insulators is analyzed. In the case of a specimen produced by varying the substrate temperature from $30^{\circ}C$ to $105^{\circ}C$, the product of mobility and the ion density decreased from $4.626{\times}10^8$ to $8.47{\times}10^7/V{\cdot}cm{\cdot}s$. This result suggests that the higher the substrate temperature is maintained, the better excluded the impurities are, and the more electrically stable material can be obtained.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.191-196
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• 2001

GaN is a key material for blue and ultraviolet optoelectronics. Postannealing process was employed to investigate the structural change and the effect on electrical property of the GaN thin film grown on reactive ion beam(RIB) treated sapphire (0001) substrate. Full width half maximum (FWHM) of double crystal x-ray diffraction (DCXRD) spectra and Hall mobility of the specimen were significantly changed depending on the postannealing time at $1000^{\circ}C$ in N2 atmosphere. FWHM of DCXRD reduced upto about 50arc-sec and the mobility increased about $80\textrm{cm}^2$/V.sec. The postannealed specimen with the best mobility was compared with sample without annealing by TEM. The former sample showed a decrease in the lattice strain and reduction of dislocation density by about 56~59%. This implies that there is a strong correlation between crystalline quality and the electrical property of the film. The Present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.8
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• pp.1-7
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• 2017

This study numerically evaluates the heat transfer characteristics of a 360-Wh Li-ion battery pack. The analysis was done in ANSYS CFX using different cell arrangements, cell holders, and case materials for a personal mobility device program. A total of four cases of cell arrangements were considered, along with various materials for both the cell holder and the case, such as polypropylene, aluminum, and magnesium alloy. Out of the four cell arrangements, model 2 showed the best heat transfer performance, while aluminum showed the best heat transfer performance for the cell holder and case.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.1
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• pp.1-5
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• 1968

GaAs single crystals were grown epitaxially from Ga solution with carrier concentrations in the range and electron mobilities between 7,500 and 9,300$\textrm{cm}^2$/v-sec. at 300$^{\circ}$K, and 50,000 and 95,000 $\textrm{cm}^2$/V-sec. at 77$^{\circ}$K. A comparison of the theoretical and experimental curves for the mobility vs. temperature indicates that the significant scattering mechanisms are ionized impurities and phonons in the temperature range of 77$^{\circ}$K to 439$^{\circ}$K. This indicates that the epitaxial layers do not contain other mobility limiting imperfections to a significant degree. Photoluminescence spectra of the. epitaxial layers did not show any emission due to deep lying imperfection leve1s.