• 한국표면공학회지
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• 제29권5호
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• pp.556-562
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• 1996

Carbon nitride (CN) films were synthesized on silicon substrates by a combined ion-beam and laser-ablation method under various conditions; ion-beam energy and ion-beam current were varied. Raman spectroscopy and spectroscopic ellipsometry (SE) were employed to characterize respectively the structural and the optical properties of the CN films. Raman spectra show that all the CN films are amorphous independent of the ion-beam current and the ion-beam energy. Refractive indices, extinction coefficients and optical band gaps which were determined from the measured SE spectra exhibit a significant dependence on the synthesis conditions. Especially, the decrease of the refractive indices and the shrinkage of the optical band gap is noticeable as the ion-beam current and/or the ion-beam energy increase.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.581-584
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• 2005

Ion beam processing is one of the key technologies to realize mastless and resistless sub 50nm nano fabrication. Unwanted effects, however, may occur since an energetic ion can interact with a target surface in various ways. Depending on the ion energy, the interaction can be swelling, deposition, sputtering, re-deposition, implantation, damage, backscattering and nuclear reaction. Sputtering is the fundamental mechanisms in ion beam induced direct patterning. Re-deposition and backscattering are unwanted mechanisms to avoid. Therefore understanding of ion beam-solid interaction should be advanced for further ion beam related research. In this paper we simulate some important interaction mechanisms between energetic incident ions and solid surfaces and the results are compared with experimental data. The simulation results are agreed well with experimental data.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1994년도 제6회 학술발표회 논문개요집
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• pp.10-10
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• 1994

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1246-1249
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• 1994

Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.

• Transactions on Electrical and Electronic Materials
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• 제9권5호
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• pp.202-205
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• 2008

We have studied the liquid crystal (LC) orientation behavior on the organic hybrid overcoat layer with ion beam irradiation. Excellent LC alignments of the nematic liquid crystal (NLC) on the ion beam irradiated organic hybrid overcoat layers were observed in various intensities above 600 eV. Pretilt angles of the NLC on the organic hybrid overcoat layers for all ion beam energy intensities were observed from 0.2 to 0.5 degrees. Also, we used the atomic force microscopy (AFM) images for measuring the roughness of the organic hybrid overcoat layers with ion beam irradiation before and after. The surface of organic hybrid overcoat layers was leveled off by the ion beam irradiation. Finally, a good LC alignment thermal stability on the organic hybrid overcoat layer with ion beam irradiation can be achieved.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.494-499
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• 2004

A ion source using inductively coupled plasma has been tested in order to test its feasibility as a high brightness ion source for focused ion beam. When operating the ion source with filter magentas in front of plasma electrode for a negative ion source, lower remittances are expected. Extracted beam remittances are measured with an Allison-type scanning device for various plasma parameters and extraction conditions. The normalized omittance has been measured to be around 0.2$\pi$mmmrad with beam currents of up to 0.55 ㎃. In particular, noting that multicusp magnets have a role in decreasing the remittance as well as increasing plasma discharge efficiency, transverse magnetic field has been confirmed to be a useful tool fur decreasing remittance via electron energy control.

• Nuclear Engineering and Technology
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• 제23권4호
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• pp.426-437
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• 1991

SNU 1.5-MV 직렬형 반데그라프 가속기의 $He^{++}$ 빔 수송계를 이온광학적으로 분석하였다. 각 이온광학요소의 최적운전조건을 결정하고, 이온빔 수송을 모사하기 위하여 프로그램 OPTRANS를 개발하였다. 일차행렬법을 사용하였으며, 공간전하효과는 무시하였다. 프로그램 OPTRANS를 사용하여 0.5~3.0 MeV $He^{++}$ 빔 수송을 위한 최적운전조건을 결정하였다. 초기 이온빔의 방사면량은 인출전극의 구조와 이온빔 인출실험에 의해 0.5$\times$80.0 mm.mrad으로 가정하였다. 운전조건의 변화에 따른 각 이온광학요소의 이온빔 수송 특성을 검토하였으며, 각 Slit과 Stripping Foil, 그리고 표적에서 빔 크기가 최소로 되도록 하는 운전조건을 계산하였다. 이온빔 수송 실험으로부터 얻어진 최적운전조건은 계산된 값과 오차 범위 15% 내에서 일치하였다. 이온빔 수송 모사와 실험을 통해, 계산된 최적운전조건의 타당성 및 프로그램 OPTRANS의 유용성을 입증하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

• Journal of Radiation Protection and Research
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• 제48권4호
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• pp.204-212
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• 2023

Background: Isotopes of the projectile may be produced along the beam path during the irradiation of a target by a heavy ion due to inelastic interactions with the media. This study analyzed the production cross-section of carbon (C) and Helium (He) projectile's isotopes resulting from the interactions of these beams with different materials along the beam path. Materials and Methods: In this study, we transport C and He ion beams through different materials. This transportation was made by the Monte Carlo simulation. Particle and Heavy Ion Transport code System (PHITS) has been used for this calculation. Results and Discussion: It has been found that ¹⁰C, ¹¹C, and ¹³C from the ¹²C ion beam and ³He from the ⁴He ion beam are significant projectile's isotopes that have higher flux than other isotopes of these projectiles. The ⁴He ion beam has a higher projectile's isotope production cross-section along the beam path, which adds more impurities to the beam than the ¹²C ion beam. These projectile's isotopes from both the ¹²C and ⁴He ion beams have higher production cross-sections in hydrogenous materials like water or polyethylene. Conclusion: It is important to distinguish these projectile's isotopes from the primary beam particles to obtain a precise and accurate cross-section result by minimizing the error during measurement with a nuclear track detector. This study will show the trend of the production probability of projectile's isotopes for these ion beams.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.68-69
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• 1998

Nano-crystalline silicon(nc-Si) thin films were directly depposited by ion beam assisted electron beam depposition (IBAED) method. The visibe luminescence in IBAED sampples were originated from not an oxygen bond but Si nano-crystallites. And we can conclude that the ion beam would be contribute to the suppression of the Si-O bond formation.