• Carbon letters
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• v.12 no.3
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• pp.180-183
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• 2011

Li metal is accepted as a good counter electrode for electrochemical impedance spectroscopy (EIS) as the active material in Li-ion and Li-ion polymer batteries. We examined the existence of signal noise from a Li-metal counter quantitatively as a preliminary study. We suggest an electrochemical cell with one switchable electrode to obtain the exact impedance signal of active materials. To verify the effectiveness of the switchable electrode, EIS measurements of the solid electrolyte interphase (SEI) before severe $Li^+$ intercalation to SFG6 graphite (at > ca. 0.25 V vs. Li/$Li^+$) were taken. As a result, the EIS spectra without the signal of Li metal were obtained and analyzed successfully for the following parameters i) $Li^+$ conduction in the electrolyte, ii) the geometric resistance and constant phase element of the electrode (insensitive to the voltage), iii) the interfacial behavior of the SEI related to the $Li^+$ transfer and residence throughout the near-surface (sensitive to voltage), and iv) the term reflecting the differential limiting capacitance of $Li^+$ in the graphite lattice.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.404-409
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• 1993

Adorption of nitric oxide on the Pt(III) surface sputtered by Ar-ion has been studied using thermal desorption spectroscopy and Auger electron spectroscopy. Ar-ion sputtering creates a precursor state of ($NO\beta$ stage) adsorbe dat defect sites. The precursor state is characterized by the terminal bent species . At low coverge mos 샐 adsorbed NO dissociates . And as increasing the coverage, the fraction of dissociation remains about 80%.

• Journal of the Speleological Society of Korea
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• no.78
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• pp.29-31
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• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.218.2-218.2
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• 2014

그래핀은 높은 전기 전도도와 열전도도, 기계적 강도를 가지고 있고 동시에 높은 전자이동도($200,000cm^2{\cdot}V{\cdot}^1{\cdot}s{\cdot}^1$) 특성을 갖는 물질로써 차세대 소재로 각광받고 있다. 하지만 그래핀을 소자에 응용하기 위해서는 전사공정과 lithography 공정 과정에서 발생되는 PMMA(Poly methyl methacrylate) residue를 완벽하게 제거해야 하는 문제점이 있다. 특히, lithography 공정 중 완벽하게 PMMA residue 가 제거되지 않고 잔류해 있을 경우에 소자의 life time, performance에 악영향을 준다는 보고가 있다. 이와같은 문제를 해결하기 위해 화학적 cleaning, 열처리를 통한 cleaning, 전류 인가에 의한 cleaning과 같은 방법들을 이용하여 그래핀의 PMMA residue를 제거하는 공정들이 보고되고 있지만, 화학적 cleaning 방법의 경우 chloroform 이라는 독성물질 사용으로 인해 산업적으로 응용이 어렵고, 열처리 방법은 전극 등의 금속이 $200^{\circ}C$ 이상의 높은 온도에서 장시간 노출될 경우 쉽게 손상을 입으며, 전류 인가에 의한 cleaning 방법은 국부적으로만 효과를 볼 수 있기 때문에 lithography 공정 후 PMMA residue를 효과적으로 제거하기에는 한계를 보이고 있다. 본 연구에서는 Ar을 이용하는 Ion beam 시스템을 통해 beam energy를 제어함으로써 PMMA residue를 효과적으로 제거하는 연구를 진행하였다. 최적화된 플라즈마 발생 조건을 찾기 위해 QMS(Quadrupole Mass Spectrometer)를 이용하여 입사하는 ion energy와 flux 양을 컨트롤 하였고, 250 W에서 최적화된 ion energy distribution 영역이 존재한다는 것을 확인할 수 있었다. 또한, 25 Gauss 정도의 electro-magnetic field를 이용하여 Ar의 ion energy를 10 eV 이하로 낮추어 damage를 최소화함으로써 효과적으로 그래핀을 cleaning 할 수 있었다. Cleaning과정에서 ion bombardment에 의해 발생한 damage는 $250^{\circ}C$에서 6시간 동안 annealing 공정을 거치면서 회복되는 것을 Raman spectroscopy의 D peak ($1335cm{\cdot}^1$) / G peak ($1572cm{\cdot}^1$) ratio 로 확인할 수 있었고, PMMA residue의 cleaning 여부는 G peak ($1580cm{\cdot}^1$)의 blue shift와 2D peak ($2670cm{\cdot}^1$)의 red shift를 통해 확인하였다. 그리고 AFM (Atomic Force Microscopy)을 이용하여 cleaning 공정과정에서 RMS roughness가 4.99 nm에서 2.01 nm로 감소하는 것을 관찰하였다. 마지막으로, PMMA residue의 cleaning 정도를 정량적으로 분석하기 위해 XPS (X-ray Photoelectron Spectroscopy)를 이용하여 sp2 C-C bonding이 74.96%에서 87.66%로 증가함을 확인을 할 수 있었다.

• Korean Journal of Materials Research
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• v.11 no.1
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• pp.55-60
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• 2001

The effect of high energy B ion implantation and initial oxygen concentration upon defect formation and gettering of metallic impurities in Czochralski silicon wafer has been studied by applying DLTS( Deep Level Transient Spectroscopy), SIMS(Secondary ton Mass Spectroscopy), BMD (Bulk Micro-Defect) analysis and TEM(Transmission Electron Microscopy). DLTS results show the signal of the deep levels not only in as-implanted samples but also in low and high temperature annealed samples. Vacancy-related deep levels in as- implanted samples were changed to metallic impurities-related deep levels with increase of annealing temperature. In the case of high temperature anneal, by showing the lower deep level concentration with increase of initial oxygen concentration, high initial oxygen concentration seems to be more effective compared with the lower initial oxygen one.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.473-474
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• 2008

This paper proposes that the relative transmittance and emission intensity measured via optical emission spectroscopy (OES) is a useful for fault detection of reactive ion etch process. With the increased requests for non-invasive as well as real-time plasma process monitoring for fault detection and classification (FDC), OES is suggested as a useful diagnostic tool that satisfies both of the requirements. Relative optical transmittance and emission intensity of oxygen plasma acquired from various process conditions are directly compared with the process variables, such as RF power, oxygen flow and chamber pressure. The changes of RF power and Pressure are linearly proportional to the emission intensity while the change of gas flow can be detected with the relative transmittance.

• Journal of Electrochemical Science and Technology
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• v.12 no.4
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• pp.415-423
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• 2021

For a battery module where single cells are connected in series, the single cells should each have a similar state of charge (SOC) to prevent them from being exposed to an overcharge or over-discharge during charge-discharge cycling. To detect the existence of unbalanced SOC cells in a battery module, we propose a simple measurement method using a single-frequency response of electrochemical impedance spectroscopy (EIS). For a commercially available graphite/nickel-cobalt-aluminum-oxide lithium-ion cell, the cell impedance increases significantly below SOC20%, while the impedance in the medium SOC region (SOC20%-SOC80%) remains low with only minor changes. This impedance behavior is mostly due to the elementary processes of cathode reactions in the cell. Among the impedance values (Z, Z', Z"), the imaginary component of Z" regarding cathode reactions changes heavily as a function of SOC, in particular, when the EIS measurement is performed around 0.1 Hz. Thanks to the significant difference in the time constant of cathode reactions between ≤SOC10% and ≥SOC20%, a single-frequency EIS measurement enlarges the difference in impedance between balanced and unbalanced cells in the module and facilitates an ~80% improvement in the detection signal compared to results with conventional EIS measurements.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.124-125
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• 2012

Korea institute of materials science (KIMS) use a linear deposition source called as a closed drift linear plasma source (CDLPS) as well as dual magnetron sputtering (DMS) to deposit SiOxCyHz films in $HMDSO/O_2$ plasma. The CDLPS generates linear plasma using closed drifting electrons and can reduce device degradations due to energetic ion bombardments on organic devices such as organic photovoltaic and organic light emission diode by controlling an ion energy. The deposited films are investigated by Fourier transform infrared (FT-IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Optical emission spectroscopy (OES) is used to measure relative radical populations of dissociation and recombination products such as H, CH, and CO in plasma. And SiOx film is applied to a barrier film on organic photovoltaic devices.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.4
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• pp.307-317
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• 1994

The surf ace microstructure modification by $N^+$ ion implantation into 7050Al alloy and its low cycle fatigue behavior were investigated. Ion implantation method is to physically implant accelerated ions to the surface of a substrate. High dose of nitrogen($5{\times}10^{17}ions/cm^2$) were implanted into 7050Al alloy using current density of accellerating voltage of 100KeV. The implanted layers were characterized by Electron Probe-Micro Analysis(EPMA), Auger Elecron Spectroscopy(AES), X-Ray Diffraction(XRD), X-Ray Photoelectron Spectroscopy(XPS), and Transmission Electron Microscopy(TEM). The experimental results were compared with computer simulation data. It was shown that AlN was formed to 4500 ${\AA}$ deep. The low cycle fatigue life of the $N^4$ion modified material was prolonged by about three times the unimplanted one. The improved low cycle fatigue life was attributed to the formation of AlN and the damaged region on the surface by $N^+$ ion implantation.