• Title/Summary/Keyword: ion source

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Understanding Ion Pump Emissions : Classification, Source Identification and Elimination of Emissions from Ion Pumps

  • Wynohrad, Tony
    • Applied Science and Convergence Technology
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    • v.23 no.6
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    • pp.340-344
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    • 2014
  • Ion pumps continue to be a staple in ultra-high vacuum (UHV) applications. Since their adoption as a primary UHV pump in the 1960's, it has been known that a variety of particles can emanate from within the ion pump and cause undesirable effects on current measurements and optics components. Historically the solution has been baffling and shielding which results in longer conductance paths to the ion pump. Those solutions can work, but require a larger pump and more vacuum plumbing to compensate for conductance losses. The first step was to fully understand the nature of the particles and their charges. Once those were characterized options for emissions reduction were evaluated. It was determined that an efficient design of shielding near the source of the particle generation site was the most cost effective solution. With a slight modification to the chamber of a small ion pump, internal shielding was developed that reduced the emissions by a factor of up to 1000 times.

Simulation of a Langmuir Probe in an ECR Reactor (ECR Reactor 내의 Langmuir Probe 시뮬레이션)

  • Kim, Hoon;Porteous, Robert K.;Boswell, Rod W.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1609-1611
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    • 1994
  • In ECR and helicon reactors for plasma processing, a high density plasma is generated in a source region which is connected to a diffusion region where the processing takes place. Large density and potential gradients can develop at the orifice of the source which drive ion currents into the diffusion region. The average ion velocity may become the order of the sound velocity. Measurements of the ion saturation current to a Langmuir probe are used as a standard method of determining the plasma density in laboratory discharges. However, the analysis becomes difficult in a steaming plasma. We have used the HAMLET plasma simulator to simulate the ion flow to a large langmuir probe in an ECR plasma. The collection surface was aligned with the Held upstream, normal to the field, and downstream. ion trajectories through the electric and magnetic fields were calculated including ion-neutral collisions. We examines the ratio of ion current density to plasma density as a function of magnetic field and pressure.

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Single Cell Li-ion Battery Charger (Single Cell Li-ion 전지 충전 IC)

  • Lee, Rock-Hyun;Kim, Jun-Sik;Park, Shi-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.7
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    • pp.576-579
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    • 2009
  • This paper suggests a autonomous linear Li-ion battery charger which can safely distribute power between an external power source(AC adapter, auto adapter, or USB source), battery, and the system load. Depending on an external power source's capability, the charger selects proper charging-mode automatically. The charger IC designed and fabricated on Dongbu HITEC's $0.35{\mu}m$ BCD process with layers of one poly and three metals.

A Single Cell Li-ion Battery Charger (Single Cell Li-ion 전지 충전 IC)

  • Lee, Rock-Hyun;Kim, Jun-Sik;Park, Shi-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.27-28
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    • 2009
  • This paper suggests a autonomous linear Li-ion battery charger which can safely distribute power between an external power source(AC adapter, auto adapter, or USB source), battery, and the system load. Depending on an external power source's capability, the charger selects proper charging-mode automatically. The charger IC designed and fabricated on Dongbu HITEC's $0.35{\mu}m$ BCD process with layers of one poly and three metals.

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A Multi-megawatt Long Pulse Ion Source of Neutral Beam Injector for the KSTAR

  • Chang, Doo-Hee;Seo, Chang-Seog;Jeong, Seung-Ho;Oh, Byung-Hoon;Lee, Kwang-Won;Kim, Jin-Choon
    • Proceedings of the Korean Nuclear Society Conference
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    • 2004.10a
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    • pp.719-720
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    • 2004
  • A multi-megawatt long pulse ion source (LPIS) of neutral beam injector was developed for the KSTAR. Beam extraction experiments of the LPIS were carried out at the neutral beam test stand (NBTS). Design requirements for the ion source were 120 kV/65 A deuterium beam and a 300 s pulse length. A maximum ion density of $9.1310^{11}$ $cm^{-3}$ was measured by using electric probes, and an optimum arc efficiency of 0.46 A/kW was estimated with ion saturation current of the probes, arc power, and total beam area. An arcing problem, caused by the structural defect of decelerating grid supporter, in the third gap was solved by the blocking of backstream ion particles, originated from the plasma in the neutralizer duct, through the unnecessary spaces on the side of grid supporter. A maximum drain power of 1.5 MW (i.e. 70 kV/21 A) with hydrogen was measured for a pulse duration of 0.5 s. Optimum beam perveance was ranged from 0.75 to 0.85. An improved design of accelerator for the effective control of beam particle trajectory should provide higher beam perveance.

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QMF Ion Beam System Development for Oxide Etching Mechanism Study (산화막 식각 기구 연구를 위한 QMF Ion Beam 장치의 제작)

  • 주정훈
    • Journal of the Korean institute of surface engineering
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    • v.37 no.4
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    • pp.220-225
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    • 2004
  • A new ion beam extraction system is designed using a simple ion mass filter and a micro mass balance and a QMS based detecting system. A quadrupole Mass Filter is used for selective ion beam formation from inductively coupled high density plasma sources with appropriate electrostatic lens and final analyzing QMS. Also a quartz crystal microbalance is set between a QMF and a QMS to measure the etching and polymerization rate of the mass selected ion beam. An inductively coupled plasma was used as a ion/radical source which had an electron temperature of 4-8 eV and electron density of $4${\times}$10^{11}$#/㎤. A computer interfaced system through 12bit AD-DA board can control the pass ion mass of the qmf by setting RF/DC voltage ratio applied to the quadrupoles so that time modulation of pass ion's mass is possible. So the direct measurements of ion - surface chemistry can be possible in a resolution of $1\AA$/sec based on the qcm's sensitivity. A full set of driving software and hardware setting is successfully carried out to get fundamental plasma information of the ICP source and analysed $Ar^{+}$ beam was detected at the $2^{nd}$ QMS.

Investigation of New Ionized Cluster Beam Source (새로운 이온화된 클라스터 빔원의 제작과 특성 조사)

  • ;;;;S.G.Kondrnine;E.A. Krallkina
    • Journal of the Korean Vacuum Society
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    • v.5 no.3
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    • pp.251-257
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    • 1996
  • The present paper represents the results of development and first experimental tests of a new ionized cluster beam (ICB) source. The novelty of ICB source lies in the fact that the crucible and ionization parts are spaced in one cylindrical shell but are not divided in an electric circuit. The ICB source adapts permanent magnets to increase the ionization efficiency. The maximum obtained $Cu^+$ ion current denisity is $1.5{\mu}A/\textrm{cm}^2$, therewith the ionization rate amounts 3% under deposition rate is 0.2$\AA$/s and the acceleration voltage is 4 kV, the $Cu^+$ ion beam uniformity is better than 95%.

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A Study on Development of Efficient Source Head (효율적인 Source Head 개발에 관한 연구)

  • Kim, Gui-Jung
    • Proceedings of the Korea Contents Association Conference
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    • 2007.11a
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    • pp.865-868
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    • 2007
  • This research is the method that develops the efficient Source Head and the performance of Ion Implanter. Source Head is used during 20 days because Source Head's life time is different from the life time of most components. Components which is replaced to remake the Source Head is very expensive, and moreover, the above of 50% is used with one time. In this research, as we applied the influx method of the atom in aerial distributed method, obtained the effect which suppresses the portion which occurs with loss of thermion and is a possibility of lowering the pressure of the Arc. And then We it will be able to suppress be imbrued of the Chamber.

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CHARACTERIXATION OF PLASMA ION IMPLANTED SURFACES USING TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMATRY

  • Lee, Yeon-Hee;Han, Seung-Hee;Lee, Jung-Hye;Yoon, Jung-Hyeon
    • Journal of the Korean institute of surface engineering
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    • v.29 no.6
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    • pp.880-883
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    • 1996
  • Plasma Source Ion Implantation (PSII) technique was used for the hydrophilization or hydrophobization of polymer surfaces. Polymers were modified with different plasma gases such as oxygen, nitrogen, argon, and tetrafluoromethane, and for varying lengths of treatment time. Plasma ion treatment of oxygen, nitrogen, argon and their mixtures increased significantly the hydrophilic properties of polymer surfaces. More hydrophobic surfaces of polymers were formed after the treatment with tetrafluoromethane. A study of plasma source ion implanted polymers was performed using contact angle measurements and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). The TOF-SIMS spectra and depth profile were used to obtain the information about the treated surfaces of polymers. The permanence of this technique could be evaluated with respect to ageing time. The surfaces treated with PSII gave better stability than other surface modification methods.

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