• Title/Summary/Keyword: ion sensitivity

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Development of High-Sensitivity Ion Sources for Residual Gas Analyzer

  • Park, Chang-Jun;Han, Cheol-Su;An, Sang-Jeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.104.2-104.2
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    • 2013
  • A residual gas analyzer (RGA) system has been developed in this laboratory. Characteristics of the RGA system parts such as ion source, quadrupole mass filter and sensitivity are introduced. Some efforts have been made to improve performance of the two types of ion sources, open ion source (OIS) and closed ion source (CIS). A metal mesh was placed onto the electron beam entrance of the CIS anode tube to block the filament field penetration. Sensitivity of the CIS ion sources with and without the mesh was compared by mass spectra of SF6 gas (97% He base) introduced into the CIS anode through a needle valve. About ten-times improvement in the RGA sensitivity was observed for the CIS with the mesh in the electron entrance. Computer simulation showed an axi-symmetric anode potential distribution and improved focusing of the electron beam inside the anode tube with the mesh.

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Effect of Ar Ion Irradiation on the Hydrogen Gas Sensitivity of SnO2 Thin Films (Ar 이온빔 조사에 따른 SnO2 박막의 물성 연구)

  • Heo, S.B.;Lee, Y.J.;Kim, S.K.;You, Y.Z.;Choi, D.H.;Lee, B.H.;Kim, M.G.;Kim, Daeil
    • Journal of the Korean Society for Heat Treatment
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    • v.25 no.6
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    • pp.279-282
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    • 2012
  • $SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.

Application of Ion-Selective Electrodes to Measure Ionic Concentrations of Macronutrients in Hydroponics (수경재배 시 다량 이온 농도 측정을 위한 이온 선택성 전극의 응용)

  • Kim, Min-Su;Park, Tu-San;Cho, Seong-In
    • Journal of Biosystems Engineering
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    • v.32 no.1 s.120
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    • pp.37-43
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    • 2007
  • This study was carried out to investigate the applicability of PVC membrane-based ion-selective electrodes for macronutrients (K, Ca, and N) by measuring of potassium, calcium, nitrate ions in hydroponic nutrient solution. The capabilities of two ion-selective membranes with varying chemical compositions for each ion were evaluated in terms of sensitivity, selectivity, and lifetime to choose sensing elements suitable for measuring typical ranges of nutrient concentrations in hydroponic solutions. The selected calcium and nitrate ion-selective membranes showed effectively sensitive responses to calcium and nitrate ions with lifetimes of 25 and 15 days, respectively. The addition of a cation additive to the potassium membrane cocktail allowed its sensitivity to be increased whereas its lifetime was reduced from 30 days to 10 days.

A Study on Alkali ion-Sensitivity of $Si_{x}O_{y}N_{z}$ Fabricated by Low Pressure Chemical Vapor Deposition (저압화학기상 성장법으로 제작된 $Si_{x}O_{y}N_{z}$의 알칼리이온 감지성에 관한 연구)

  • Shin, P.K.;Lee, D.C.
    • Journal of Sensor Science and Technology
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    • v.6 no.3
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    • pp.200-206
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    • 1997
  • Using $SiCl_{2}H_{2}$, $NH_{3}$ and $N_{2}O$, we have fabricated silicon oxynitride ($Si_{x}O_{y}N_{z}$) layers on thermally oxidized silicon wafer by low pressure chemical vapor deposition. Three different compositions were achieved by controlling gas flow ratios($NH_{3}/N_{2}O$)) to 0.2, 0.5 and 2 with fixed gas flow of $SiCl_{2}H_{2}$. Ellipsometry and high frequency capacitance-voltage(HFCV) measurements were adapted to investigate the difference of the refractive index, dielectric constant, and composition, respectively. Regardless of nitride content, silicon oxynitrides had similar stability to silicon nitrides. The relative standing of alkali ion sensitivity in silicon oxynitride layers was influenced by nitride content. The better alkali ion-sensitivity was achieved by increasing oxide content in bulk of silicon oxynitrides.

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Determinaton of Chloride Ion Captured into Strong NaOH Solution from Chimney by Capillary Electrophoresis (모세관 전지영동법에 의한 굴뚝에서 포집된 NaOH 용액속의 염소이온의 측정)

  • 임인덕;성용익;김양선;임흥빈
    • Journal of Korean Society for Atmospheric Environment
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    • v.15 no.3
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    • pp.327-333
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    • 1999
  • Determination of chloride ion in concentrated NaOH solution by capillary electrophoresis has been studied. The analysis was performed by indirect UV absorption detection using chromate buffer at 254nm. The matrix effect of the sample has been observed so that the sensitivity in strong NaOH solutaion has decreased up to 10% of that in distilled water. The pH effect of the sample on the sensitivity of CE peaks has been investigated. The method for increasing the sensitivity have been investigated and the optimum pH and concentration of the buffer were 7.5 and 10mM, respectively. A cationic surfactant cetyltrimethylammonium bromide(CTAB), was added to a buffer solution in order to reverse the electroosmotic flow(EOF) in the capillary. This results in a short analysis time and better peak shapes. Using this optimum condition, the determination of chloride ion in real environmental sample has been performed, which is captured in strong NaOH absorbent prepared for absorbing gas from chimney. The standard addition method has been applied for the quantitative analysis, and it was obtained the good reproducibility.

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Electrochemical Ion Migration Sensitivity of Printed Circuit Board Plated with Sn-3.0Ag-0.5Cu and Sn-37Pb (Sn-3.0Ag-0.5Cu, Sn-37Pb 표면처리 기판의 전기화학적 이온 마이그레이션 민감도)

  • Hong, Won-Sik;Park, No-Chang;O, Cheol-Min;Kim, Gwang-Bae
    • Proceedings of the KWS Conference
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    • 2006.10a
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    • pp.136-138
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    • 2006
  • Recently a lots of problems have observed in high densified and high integrated electronic components. One of them is ion migration phenomena, which induce the electrical short of electrical circuit. Ion migration phenomena has been observed in the field of exposing the specific environment and using for a long time. Also as the RoHS restriction was started in July 1st, 2006, Pb-free solder was utilized in electronics assemblies. In this case, it is very important to compatible between components and printed circuit board(PCB), thus surface treatment materials of PCB was changed to Sn, Sn-3.0Ag-0.5Cu, Cu. Therefore these new application become to need to reevaluate the sensitivity about electrochemical ion migration. This study was evaluated the occurrence time of electrochemical ion migration using by water drop test. We utilized PCB(printed circuit board) having a comb pattern as follows 0.1, 0.318, 0.5, 1.0 mm pattern distance. Sn-3.0Ag-0.5Cu and Sn-37Pb were electroplated on the comb pattern. 6.5V and 15.0V were applied in the comb pattern and then we measured the electrical short time causing by occurring the ion migration. In these results, we evaluate the sensitivity and derived the prediction models of ion migration occurrence time depending on the pattern materials, applied voltage and pattern spacing of PCB conductor.

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Polymeric Lead(II)-selective Electrode Based on N,N'-Bis-thiophen-2-ylmethylene-pyridine-2,6-diamine as an Ion Carrier

  • Kim, Hee-Cheol;Lee, Hyo-Kyoung;Choi, A-Young;Jeon, Seung-Won
    • Bulletin of the Korean Chemical Society
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    • v.28 no.4
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    • pp.538-542
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    • 2007
  • Polymeric electrodes for lead ion based on N,N'-bis-thiophen-2-ylmethylene-pyridine-2,6-diamine as an ion carrier were prepared. The membrane electrode (m-3) containing o-NPOE as a plasticizer and 50 mol% additive of ionophore gives an excellent Nernstian response (29.59 mV/decade) and the limit of detection of ?log a (M) = 5.74 to Pb2+ in Pb(NO3)2 solution at room temperature. The prepared electrode provided good sensitivity and outstanding selectivity and response for Pb2+ over a wide variety of other metal ions in pH 7.0 buffer solutions. The good sensitivity and selectivity towards lead ion are attributed to the strong complexation of lead ion to N,N'-bis-thiophen-2-ylmethylene-pyridine-2,6-diamine which has geometrically the proper cavity to coordinate to the ligand.

Quantitative Evaluation of Image Quality using Automatic Exposure Control & Sensitivity in the Digital Chest Image (디지털 흉부영상에서 자동노출제어 및 감도변화를 이용한 영상품질의 정량적인 평가)

  • Lee, Jin-Soo;Ko, Seong-Jin;Kang, Se-Sik;Kim, Jung-Hoon;Kim, Dong-Hyun;Kim, Changsoo
    • The Journal of the Korea Contents Association
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    • v.13 no.8
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    • pp.275-283
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    • 2013
  • The patient radiation dose is different depending on selection of Ion chamber when taking Chest PA which using AEC. In this paper, we studied acquiring the best diagnostic images according to selection of Ion chamber on AEC mode as well as minimizing patient radiation dose. Experimental methods were selection of Ion chamber and change of sensitivity under the same conditions as Chest PA projection. At AEC mode, two upper ion chambers sensors and one lower ion chamber sensor were divided into 7 cases according to selection of on/off. after measuring five times respectively, we obtained average value and calculated exposure dose. Image assessment was done with measured Modulation Transfer Function, Peak Signal to Noise Ratio, Root Mean Square, Signal to Noise Ratio, Contrast to Noise Ratio, Mean to Standard deviation Ratio respectively. In exposure assessment results, selection of two upper chambers was the lowest. In resolution assessment results, image of two upper chambers had the second high spatial frequency at sensitivity at 625(High) was 1.343 lp/mm. RMS value of image selecting two upper chambers was low secondly. SNR, CNR, MSR were the high value secondly. As the sensitivity was increased, radiation dose was decreased but better image could be obtained on image quality. In order to obtain the best medical images while minimizing the dose, usage of two upper ion chambers is considered to be clinically useful at sensitivity 625(High).

An Experimental Study on the Effect of Sensor Line Number on the Reactivity Characteristic of Corrosion Sensor Reactive with Chloride Ion to Immigrate into Concrete (콘크리트내로 침투하는 염소이온 반응형 부식센서의 응답특성에 미치는 센서 세선 수의 영향에 관한 실험적 연구)

  • Lee, Hyun-Seok;Lee, Han-Seung
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.18 no.3
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    • pp.143-152
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    • 2014
  • In this study, the sensor response and sensitivity is experimented and analyzed quantitatively by the line numbers of chlorine ion reaction type corrosion sensor that is developed. The sensor response of the developed corrosion sensor is verified with properties of chlorine ion. The multilineal sensor is shown a large resistance change more than the single line sensor by damage of the sensor. And, the resistance change of sensor is as large as high concentration of NaCl aqueous solution, the sensitivity of multilineal sensor is higher than single line sensor's, and the depth of sensor's location is as large as the increasing of resistance change time (cycle). These results suggest that, the developed corrosion sensor could sense corrosion reaction, sensor sensitivity and change of resistance for chloride ion. Especially, It was judged that 7 line sensor was the most superior for monitoring chloride ion immigration into concrete.

Super Coupling Dual-gate Ion-Sensitive Field-Effect Transistors

  • Jang, Hyun-June;Cho, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.239-239
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    • 2013
  • For more than four decades, ion-sensitive field-effect transistor (ISFET) sensors that respond to the change of surface potential on a membrane have been intensively investigated in the chemical, environmental, and biological spheres, because of their potential, in particular their compatibility with CMOS manufacturing technology. Here, we demonstrate a new type of ISFET with dual-gate (DG) structure fabricated on ultra-thin body (UTB), which highly boosts sensitivity, as well as enhancing chemical stability. The classic ion-sensitive field-effect transistor (ISFET) has been confronted with chronic problems; the Nernstian response, and detection limit with in the Debye length. The super-coupling effects imposed on the ultra thin film serve to not only maximize sensitivity of the DG ISFET, but also to strongly suppress its leakage currents, leading to a better chemical stability. This geometry will allow the ISFET based biosensor platform to continue enhancement into the next decade.

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