A Study on the Relation of Doping Profile and Threshold voltage in the Ion-Implanted E-IGFET(I) (Ion-Implanted E-IGFET의 Doping Profile과 Threshold 전압과의 관계에 관한 연구(I))
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- Journal of the Korean Institute of Telematics and Electronics
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- v.21 no.4
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- pp.58-64
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- 1984