• Journal of the Korean institute of surface engineering
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• v.21 no.3
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• pp.114-129
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• 1988

The principles of the physical vapour deposition processes(PVC); evaporation, sputting, and ion plating are presented and compared with each other with respect to coating properties, deposition rate and process control. The significance of coating sources and vacuum equipment for hard materials coating is discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.1007-1013
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• 1998

In this paper, the dielectric properties of fabricated Polyvinylidene fluoride(PVDF, $PVF_2$) thin film with substrate temperature from 30 to at vapor deposition. The dielectric properties of PVDF thin film had been studied in the frequency range from 10Hz to 4MHz at measuring temperature between 20 and $100^{/circ}C$. The anomalous increasing in dielectric constant and dielectric loss at low frequencies and high temperature was described for PVDF thin film containing ion impurities. In particularly, ion mobility of fabricated PVDF thin film at substrate temperature at $30^{/circ}C$ decrease from $2\times10^{-5}\;to\;3.07$\times10^{-7}cm^2/V.s$ On the other hand, ion density increase abruptly from 1.49\times$$10^{13}$ to $1.5\times$10^{16}$cm^{-3}$ In spite of decreasing of ion mobility, dielectric constants and dielectric loss for PVDF thin film increase rapidly with decreasing frequency and high temperature. It was concluded that the dielectric constants and dielectric loss was related to ion density than to ion mobility at low frequency and high temperatures.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.95-99
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• 1995

keV ion beam irradiatin for surface modification and thin film growth have been discussed. keV ion beam irradiation in reactive gas environment has been developed for improving wettability of polymer, and for enhancing adhesion to metal film, and adventages of the method have been reviewed. An epitaxial Cu film on Si(100) substrate has been grown by ionized cluster beam and changes of crystallinity and surface roughness have been discussed. Stoichiometric $SnO_2$ films on Si(100) and glass have been grown by a hybrid ion beam Deposition(2 metal ion sources+1 gas ion source), and nonstoichiometric $SnO_2$ films are controlled by various deposition conditions in the HIB. Surface modification for polymer by kev ion irradiation have been developed. Wetting angle of water to PC has been changed from 68 degree to 49 degree with $Ar^+$ irradiation and to 8 degree with $Ar^+$ irradiation and the oxygen environment. Change of surface phenomena in a keV ion beam and characteristics of the grown films are suggested.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.123.1-123.1
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• 2000

• Journal of Mechanical Science and Technology
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• v.17 no.12
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• pp.1904-1911
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• 2003

In order to determine the wear properties of AIP (Arc Ion Plating) deposition, wear process was evaluated by using a Falex test machine. Also, in order to determine the effects of coating material on the wear process, TiC, TiN, and TiCN coatings of thickness about 5 $\mu\textrm{m}$∼6 $\mu\textrm{m}$ coated by Arc ion plating deposition method were tested. The wear property was determined under a dry sliding condition as a function of the applied load, sliding distance, sliding velocity and temperature. The results show that when wear of the coating-layer occurred, specific wear amount increased with the wear rate. At initial state, the wear rate rapidly increased, but it gradually reduced as the velocity increased. Also, when raising the temperature, the wear rate increased in the order of TiCN, TiN and TiC due to the frictional heat.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.163.2-163.2
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• 2010

In this work, nano-flake shaped nickel oxide (NiO) films were synthesized by chemical bath deposition technique for electrochemical capacitors. The deposition was carried out for 1 and 2 h at room temperature using nickel foam as the substrate and the current collector. The structure and morphology of prepared NiO film were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). And, electrochemical properties were characterized by cyclic voltammetry, galvanostatic charge-discharge, and AC impedence measurement. It was found that the NiO film was constructed by many interconnected NiO nano-flakes which arranged vertically to the substrate, forming a net-like structure with large pores. The open macropores may facilitate the electrolyte penetration and ion migration, resulted in the utilization of nickel oxide due to the increased surface area for electrochemical reactions. Furthermore, it was found that the deposition onto nickel foam as substrate and curent collector led to decrease of the ion transfer resistance so that its specific capacitance of a NiO film had high value than NiO nano flake powder.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.166-171
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• 1997

IBED is a very promosing thin film deposition method because of its many advantages, such as excellent adhesion property of films to substrates, room temperature processing, ease of control over the composition and thickness of films, and so on, over the conventional techniques, It has been widely applied in the field of surface modification of materials in the last decade. In our laboratory, many kinds of thin films, such as wear-resistant hard coatings, corrosion and oxidation protective coatings, biomaterial films, buffer layer for high temperature superconductor films, and oxygen sensitive film, have been synthesized by IBED, and several industrial applications of the IBED films have been conducted.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.140-140
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.68-69
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• 1998

Nano-crystalline silicon(nc-Si) thin films were directly depposited by ion beam assisted electron beam depposition (IBAED) method. The visibe luminescence in IBAED sampples were originated from not an oxygen bond but Si nano-crystallites. And we can conclude that the ion beam would be contribute to the suppression of the Si-O bond formation.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.32-32
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• 1992