• 한국진공학회지
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• 제16권6호
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• pp.474-478
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• 2007

실리콘 표면에 이온화된 $N_2$ 가스를 입사한 후 어닐링을 통해서 $SiN_x$ 나노구조를 형성하였다. 원자힘 현미경으로 관찰한 결과 이 나노구조의 밀도는 $3\times10^{10}/cm^2$였으며, 가로 크기는 40$\sim$60 nm 이고 높이는 약 15 nm 임을 알 수 있었다. 엑스선광전자 분광기술을 이용하여 이 나노구조의 화학상태를 측정하였는데, 입사하는 이온화된 $N_2$의 단위시간당 양이 증가함에 따라서 화학상태가 $SiN_x$에서 $Si_3N_4\;+\;SiN_x$형태로 변화함을 알 수 있었다. 열처리를 한 시료를 투과전자 현미경으로 측정된 결과는 $SiN_x$ 나노구조를 내부에 Si 나노 결정이 형성된 것을 보여주었다. 광여기 발광특성에서 관찰된 400 nm파장의 스펙트럼은 Si 나노결정의 크기를 고려할 때 나노결정과 $SiN_x$ 나노구조 사이의 계면상태에서 기인한 것으로 생각된다.

• 공업화학
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• 제9권2호
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• pp.220-225
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• 1998

스피넬 구조의 $LiMn_2O_4$를 $Li_2CO_3$와 $MnO_2$를 사용하여 $750{\sim}900^{\circ}C$에서 소성해서 합성하였다. 이 때 $850^{\circ}C$에서 12시간 동안 소성할 경우 입방정 구조의 $LiMn_2O_4$가 얻어졌다. 그러나 $900^{\circ}C$에서 소성해서 합성할 경우 산소의 발생으로 인해서 0.06M의 $Mn^{+4}$가 $Mn^{+3}$로 전이되면서 $LiMn_2O_{3.97}$이 얻어졌다. 이것은 스피넬 구조의 $LiMn_2O_4$에서 octahedral site의 $Mn^{+3}$ 이온의 증가로 인해서 Jahn-Teller distortion이 발생되며, 이로 인해 $3.6{\sim}4.3V_{Li/Li}+$의 전위범위에서 $0.25mA/cm^2$으로 15 cycle 동안 충 방전 실험한 결과 $900^{\circ}C$에서 합성된 스피넬 구조의 $LiMn_2O_4$는 82 mAh/g에서 50 mAh/g으로 용량 감소가 나타났으나 $850^{\circ}C$에서 합성한 $LiMn_2O_4$는 102~64 mAh/g을 유지했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.79-84
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• 1993

This paper describes the development of lithium rechargeable cell. $LiCoO_2$ is recently recognized as a suitable cathode active material of a high voltage, high energy lithium rechargeable batteries because $Li^+$ ion can be electrochemically deintercalated/intercalated from/to $Li_xCoO_2$. The transition metal oxide of $LiCoO_2$ was investigated for using as a cathode active material of 4V class Li rechargeable cell. $LiCoO_2$ cathode was prepared by using a active material of 85 wt%, graphite powder of 12 wt% as a conductor and poly-vinylidene fluoride of 3 wt% as a binder. The electrochemical and charge/discharge properties of $LiCoO_2$ were investigated by cyclic voltammetry and galvanostatic charge/discharge. The open circuit voltage of prepared $LiCoO_2$ electrode exhibited approximately. potential range between 3.32V and 3.42V. During the galvanostatic charge/discharge, $LiCoO_2/Li$ cell showed stable cycling behavior at scan rate of 1mV/sec and potential range between 3.6V and 4.2V. Also its coulombic efficiency as function of cycling was 81%~102%. In this study the $LiCoO_2/Li$ cell showed the available discharge capacity of 90.1 mAh/g at current density of $1mA/cm^2$ and cell discharge voltage range between 3.6V~4.2V.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• 대한치과보철학회지
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• 제44권5호
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• pp.628-641
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• 2006

Statement of problem: Dental magnetic materials have been applied to removable prosthetic appliances, maxillofacial prostheses, obturator and dental implant but they still have some problems such as low corrosion resistance in oral environments. Purpose: To increase the corrosion resistance of dental magnetic materials, surfaces of Sm-Co and Nd-Fe-B based magnetic materials were plated with TiN and sealed with stainless steels. Materials and methods : Surfaces of Sm-Co and Nd-Fe-B based magnetic materials were plated with TiN and sealed with stainless steels, and then three kinds of electrochemical corrosion test were performed in 0.9% NaCl solution; potentiodynamic, potentiostatic, and electrochemical impedance test. From this study, corrosion behavior, amount of elements released, mean average surface roughness values, the changing of retention force, and magnetic force values were measured comparing with control group of non-coated magnetic materials. Results: The values of surface roughness of TiN coated Sm-Co and TiN coated Nd-Fe-B based magnetic materials were lower than those of non coated Sm-Co and Nd-Fe-B alloy. From results of potentiodynamic test, the passive current density of TiN coated Sm-Co alloy were smaller than those of TiN coated Nd-Fe-B alloy and non coated alloys in 0.9% NaCl solution. From results of potentiostatic and electrochemical impedance test, the surface stability of the TiN coated Sm-Co alloy was more drastically increased than that of the TiN coated Nd-Fe-B alloy and non-coated alloy. The retention and magnetic force after and before corrosion test did not change in the case of TiN coated magnetic alloy sealed with stainless steel. Conclusion: It is considered that the corrosion problem and improvement for surface stability of dental magnetic materials could be solved by ion plating with TiN on the surface of dental magnetic materials and by sealing with stainless steels.

• 한국결정성장학회지
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• 제10권3호
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• pp.219-225
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• 2000

스피넬형의 $LiMn_2$O$_4$는 출발물질로 LiOH와 Mn($CH_3$COO)$_2$.$4H_2$O를 사용하여 졸-겔법으로 합성한 xerogel을 $150^{\circ}C$로 1차 열처리한 후 $350^{\circ}C$로 2차 열처리하여 합성하였다. 그러나 $350^{\circ}C$ 이상으로 열처리할 경우 $Mn_2O_3$가 생겼으며, 이로 인해서 Li/lM $LiClO_4$(in PC)$LiMn_2O_4$cell을 구성하여 0.25 mA/$\textrm{cm}^2$의 전류밀도로 충.방전 실험을 한 결과 $350^{\circ}C$에서 열처리한 것은 15 cycle후에 88 mAh/g에서 56 mAh/g으로 35.7%의 용량감소가 나타났으나 $500^{\circ}C$에서 열처리한 것은 89 mAh/g에 51 mAh/g으로 42.5%의 용량감소가 나타났으며 이는 $Mn^{3+}$ 의 증가로 인한 Jahn-Teller distortion의 결과로 볼 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• 한국표면공학회지
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• 제41권6호
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• pp.292-300
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• 2008

Dental implant system is composed of abutment, abutment screw and implant fixture connected with screw. The problems of loosening/tightening and stability of abutment screw depend on surface characteristics, like a surface roughness, coating materials and friction resistance and so on. For this reason, surface treatment of abutment screw has been remained research problem in prosthodontics. The purpose of this study was to investigate the stability of TiN and WC coated dental abutment screw, abutment screw was used, respectively, for experiment. For improving the surface characteristics, TiN and WC film coating was carried out on the abutment screw using EB-PVD and sputtering, respectively. In order to observe the coating surface of abutment screw, surfaces of specimens were characterized, using field emission scanning electron microscope(FE-SEM) and energy dispersive x-ray spectroscopy(EDS). The stability of TiN and WC coated abutment screw was evaluated by potentiodynamic, and cyclic potentiodynamic polarization method in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion potential of TiN coated specimen was higher than those of WC coated and non-coated abutment screw. Whereas, corrosion current density of TiN coated screws was lower than those of WC coated and non-coated abutment screw. The stability of screw decreased as following order; TiN coating, WC coating and non-coated screw. The pitting potentials of TiN and WC coated specimens were higher than that of non-coated abutment screw, but repassivation potential of WC coated specimen was lower than those of TiN coated and non-coated abutment screws due to breakdown of coated film. The degree of local ion dissolution on the surface increased in the order of TiN coated, non-coated and WC coated screws.

• 센서학회지
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• 제1권2호
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• pp.173-181
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• 1992

RP 반응성 스펏터링으로서 P형 실리콘 웨이퍼위에 $Ta_{2}O_{5}$막을 제조하였다. 시편의 구조 및 조성은 XRD와 AES로 조사하였다. 산소의 혼합비가 10%일 때 C-V 특성으로부터 구한 $Ta_{2}O_{5}$막의 비유전률은 10-12이었다. AES와 RBS로 측정한 $Ta_{2}O_{5}$막의 Ta : O의 비는 각각 1 : 2와 1 : 2.49로 나타났으며, 산소분위기에서 $700^{\circ}C$의 열처리 온도에서 결정성장이 시작되었다. 산소분위기에서 $1000^{\circ}C$로 열처리한 $Ta_{2}O_{5}$막의 비유전률값은 20.5였으며, 질소분위기에서 열처리한 경우의 비유전률값은 23으로 나타났다. 이 때 가육방전계(pseudo hexagonal ${\delta}-Ta_{2}O_{5}$)의 결정구조를 나타내었다. 시편의 ${\Delta}V_{FB}$와 누설전류밀도는 산소의 혼합비가 증가함에 따라 감소하였다. 그리고 최대절연파괴전장은 산소가 10% 혼합되었을 때 2.4MV/cm로 나타났다. 이러한 $Ta_{2}O_{5}$막은 수소이온 감지막 및 기억용소자의 게이트 절연막 등에 응용될 수 있을 것이다.

• 대한전자공학회논문지
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• 제16권4호
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• pp.36-46
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• 1979

본 연구에서는 N -채널 실리콘 게이트 제작기술에 의하여 일련의 크기를 가지는 커페시터와 트렌지스터들이 제작되었다. 그 결과 다양한 이온 주입 조걸, 즉 B 의 경우 에너지 30keV∼60keV와 도오스 3 × 10 ~ 5 × 10 개/㎠ 그리고 P 의 경우 에너지 1001keV∼ 175keV와 4 ×10 ~ 7×11개/㎠ 도오스 영역에서 이들에 대한 D.C. 인자들의 측정치들이 이론적인 계산치들과 비상, 분석되어 있다. 이 D.C. 인자들에는 threshold전압, 공핍층의 폭, 게이트 산화물 두께, 표면상태, 가동 하전입자 밀도, 전자의 이동도 그리고 마지막으로 누설전류가 있는데, 이중 실제 MOS의 제작에 있어서 특허 중요한 threshold전압에 있어서는, 커어브트레이서와 C - V plot을 통하여 측정된 값들이 실제 재산에서 이용된 SUPREM II 컴퓨우터 프로그램에 의한 결과와 훌륭히 접근하고 있다. 그 밖에 여기나온 D.C.인자들 중에서 도오핑 수준은 기판의 역 게이트 바이어스에서 threshold전압들로 부터 계산된 것이고, 역전도는 정의된 subthreshold 기울기로 부터 추산된 것임을 밝혀 둔다. 마지막으로 이와같은 D. C. 시험 결과들을 종합적으로 평가해 볼 때 만들어진 커페시터와 트렌지스터들이 N -채널 MOS I. C. 기억소자용으로 적합함을 보여주고 있다.