• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.474-478
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• 2007

Nanostructures of $SiN_x$ were made by bombardment of ionized $N_2$ on Si surface and subsequent annealing. Atomic force micrograph showed the density of $SiN_x$ nanostructures was $3\times10^{10}/cm^2$. Their lateral size and height were 40$\sim$60 nm and 15 nm, respectively. The chemical state of the nanostructure was measured using X-ray photoelectron spectroscopy, which changed from $SiN_x$ to $Si_3N_4\;+\;SiN_x$ as the bombarding ionized gas current increases. Upon annealing, transmission electron micrograph showed a clear evidence for crystalline Si phase formation inside the $SiN_x$ nanostructures. Photoluminescence peak observed at around 400nm was thought to be originated from the interface states between the nanocrystalline Si and surrounding $SiN_x$ nanostructures.

• Applied Chemistry for Engineering
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• v.9 no.2
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• pp.220-225
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• 1998

The spinel structured $LiMn_2O_4$ was prepared from $Li_2CO_3$ and $MnO_2$ by calcination at various temperatures in the range of $750{\sim}900^{\circ}C$. It was found that the most suitable cubic structure of $LiMn_2O_4$ was obtained by heating at $850^{\circ}C$ for 12 hrs. However, in the calcination at $900^{\circ}C$, $Mn^{4+}$ of 0.06M was changed to $Mn^{+3}$ by the oxygen loss, so that it has been shown that the formula has changed to $LiMn_2O_{3.97}$. This phenomena were in agreement with the Jahn-Teller distortion by the increment of $Mn^{+3}$ ion on the octahedral sites of the spinel structured $LiMn_2O_4$. The results showed that after 15 charge/discharge cycles in the voltage range from 3.5V to 4.3V versus Li/$Li^+$ with a current density of $0.25mA/cm^2$, the spinel structured $LiMn_2O_4$ that was prepared at $900^{\circ}C$ showed a lower discharge capacity, 82~50 mAh/g, while the $LiMn_2O_4$, prepared at $850^{\circ}C$, showed the discharge capacity of 102~64 mAh/g.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.79-84
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• 1993

This paper describes the development of lithium rechargeable cell. $LiCoO_2$ is recently recognized as a suitable cathode active material of a high voltage, high energy lithium rechargeable batteries because $Li^+$ ion can be electrochemically deintercalated/intercalated from/to $Li_xCoO_2$. The transition metal oxide of $LiCoO_2$ was investigated for using as a cathode active material of 4V class Li rechargeable cell. $LiCoO_2$ cathode was prepared by using a active material of 85 wt%, graphite powder of 12 wt% as a conductor and poly-vinylidene fluoride of 3 wt% as a binder. The electrochemical and charge/discharge properties of $LiCoO_2$ were investigated by cyclic voltammetry and galvanostatic charge/discharge. The open circuit voltage of prepared $LiCoO_2$ electrode exhibited approximately. potential range between 3.32V and 3.42V. During the galvanostatic charge/discharge, $LiCoO_2/Li$ cell showed stable cycling behavior at scan rate of 1mV/sec and potential range between 3.6V and 4.2V. Also its coulombic efficiency as function of cycling was 81%~102%. In this study the $LiCoO_2/Li$ cell showed the available discharge capacity of 90.1 mAh/g at current density of $1mA/cm^2$ and cell discharge voltage range between 3.6V~4.2V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.5
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• pp.628-641
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• 2006

Statement of problem: Dental magnetic materials have been applied to removable prosthetic appliances, maxillofacial prostheses, obturator and dental implant but they still have some problems such as low corrosion resistance in oral environments. Purpose: To increase the corrosion resistance of dental magnetic materials, surfaces of Sm-Co and Nd-Fe-B based magnetic materials were plated with TiN and sealed with stainless steels. Materials and methods : Surfaces of Sm-Co and Nd-Fe-B based magnetic materials were plated with TiN and sealed with stainless steels, and then three kinds of electrochemical corrosion test were performed in 0.9% NaCl solution; potentiodynamic, potentiostatic, and electrochemical impedance test. From this study, corrosion behavior, amount of elements released, mean average surface roughness values, the changing of retention force, and magnetic force values were measured comparing with control group of non-coated magnetic materials. Results: The values of surface roughness of TiN coated Sm-Co and TiN coated Nd-Fe-B based magnetic materials were lower than those of non coated Sm-Co and Nd-Fe-B alloy. From results of potentiodynamic test, the passive current density of TiN coated Sm-Co alloy were smaller than those of TiN coated Nd-Fe-B alloy and non coated alloys in 0.9% NaCl solution. From results of potentiostatic and electrochemical impedance test, the surface stability of the TiN coated Sm-Co alloy was more drastically increased than that of the TiN coated Nd-Fe-B alloy and non-coated alloy. The retention and magnetic force after and before corrosion test did not change in the case of TiN coated magnetic alloy sealed with stainless steel. Conclusion: It is considered that the corrosion problem and improvement for surface stability of dental magnetic materials could be solved by ion plating with TiN on the surface of dental magnetic materials and by sealing with stainless steels.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.219-225
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• 2000

The spinel structured $LiMn_2O_4$was obtained by two consecutive heat treatment on xerogel; the first heat treatment was at $150^{\circ}C$ and the second at $350^{\circ}C$ was obtained by sol-gel process using an aqueous solution of lithium hydroxide and manganese acetate. The synthesized $LiMn_2O_4$ by the sol-gel process showed a discharge capacity of 88~56 mAh/g after 15 cycles in Li/lM $LiClO_4$(in PC)/$LiMn_2O_4$at a current density of 0.25 mA/$\textrm{cm}^2$ and the voltage ranged 3.5 V to 4.3 V. For the second heat treatment above $350^{\circ}C$, $Mn_2O_3$was formed as a by-product during the synthesis of $LiMn_2O_4$. The heat treatment at $500^{\circ}C$, for example, showed a lower discharge capacity 81~47 mAh/g, after the 15 charge/discharge cycles. The lower capacity was due to the increment of $Mn^{3+}$ ion and this phenomenon was in agreement with the Jahn-Teller distortion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.292-300
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• 2008

Dental implant system is composed of abutment, abutment screw and implant fixture connected with screw. The problems of loosening/tightening and stability of abutment screw depend on surface characteristics, like a surface roughness, coating materials and friction resistance and so on. For this reason, surface treatment of abutment screw has been remained research problem in prosthodontics. The purpose of this study was to investigate the stability of TiN and WC coated dental abutment screw, abutment screw was used, respectively, for experiment. For improving the surface characteristics, TiN and WC film coating was carried out on the abutment screw using EB-PVD and sputtering, respectively. In order to observe the coating surface of abutment screw, surfaces of specimens were characterized, using field emission scanning electron microscope(FE-SEM) and energy dispersive x-ray spectroscopy(EDS). The stability of TiN and WC coated abutment screw was evaluated by potentiodynamic, and cyclic potentiodynamic polarization method in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion potential of TiN coated specimen was higher than those of WC coated and non-coated abutment screw. Whereas, corrosion current density of TiN coated screws was lower than those of WC coated and non-coated abutment screw. The stability of screw decreased as following order; TiN coating, WC coating and non-coated screw. The pitting potentials of TiN and WC coated specimens were higher than that of non-coated abutment screw, but repassivation potential of WC coated specimen was lower than those of TiN coated and non-coated abutment screws due to breakdown of coated film. The degree of local ion dissolution on the surface increased in the order of TiN coated, non-coated and WC coated screws.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.36-46
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• 1979

Using N_ Ch silicon gate technology . the capacitors and transistors with various dimenssion were fabricated. Although the applied process was somewhat standard the conditions of ion implantation for the gate were varied by changing the implant energies from 30keV to 60keV for B and from 100 keV to 175keV for P . The doses of the implant also changed from 3 $\times$ 10 /$\textrm{cm}^2$ to 5 $\times$ 10 /$\textrm{cm}^2$ for B and from 4$\times$ 10 /$\textrm{cm}^2$ to 7 $\times$ 10 /$\textrm{cm}^2$ for P . The D. C. parameters such as threshold voltage. substrate doping level, the degree of inversion, capacitance. flat band voltage, depletion layer width, gate oxide thickless, surface states, motile charge density, electron mobility. leakage current were evaluated and also compared with the corresponing theoretical values and / or good numbers for application. The threshold voltages measured using curve tracer and C-V plot gave good agreements with the values calculated from SUPREM II which has been developed by Stanford University process group. The threshold vol tapes with back gate bias were used to calculate the change of the substrate doping level. The measured subthreshold slope enabled the prediction of the degree of inversion The D. C. testing results suggest the realized capacitors and transistors are suited for the memory applications.