• 한국진공학회지
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• 제6권S1호
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• pp.96-109
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• 1997

In order to simulate the corrosion behavior of Zr-4 alloy in pressurized water reactors it was implanted (or bombarded) with 190ke V $Zr^+\; and \;Ar^+$ ions at liquid nitrogen temperature and room temperature respectively up to a dose of $5times10^{15} \sim 8\times10^{16} \textrm{ions/cm}^2$ The oxidation behavior and electrochemical vehavior were studied on implanted and unimplanted samples. The oxidation kinetics of the experimental samples were measured in pure oxygen at 923K and 133.3Pa. The corrosion parameters were measured by anodic polarization methods using a princeton Applied Research Model 350 corrosion measurement system. Auger Electron Spectroscopy (AES) and X-ray Photoelectric Spectroscopy (XPS) were employed to investigate the distribution and the ion valence of oxygen and zirconium ions inside the oxide films before and after implantation. it was found tat: 1) the $Zr^+$ ion implantation (or bombardment) enhanced the oxidation of Zircaloy-4 and resulted in that the oxidation weight gain of the samples at a dose of $8times10^{16}\textrm{ions/cm}^2$ was 4 times greater than that of the unimplantation ones;2) the valence of zirconium ion in the oxide films was classified as $Zr^0,Zr^+,Zr^{2+},Zr^{3+}\; and \;Zr^{4+}$ and the higher vlence of zirconium ion increased after the bombardment ; 3) the anodic passivation current density is about 2 ~ 3 times that of the unimplanted samples; 4) the implantation damage function of the effect of ion implantation on corrosion resistance of Zr-4 alloy was established.

• 한국재료학회지
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• 제4권1호
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• pp.9-23
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• 1994

Multitarget bias cosputter deposition(MBCD)에 의해 저온($200^{\circ}C$)에서 NaCI(100)상에 정합$CoSi_2$를 성장시켰다. X-선회절과 투과전자현미경에 의해 증착온도와 기판 bias전압에 따른 각각 silicide의 상전이와 결정성을 관찰하였다. Metal induced crystallization(MIC) 과 self bias 효과에 의해 $200^{\circ}C$에서 기판전압을 인가하지 않은 경우에도 결정질 Si이 성장하였다. MIC현상을 이론 및 실험적으로 고찰하였다. 관찰된 상전이는 $Co_2Si \to CoSi \to Cosi_2$로서 유효생성열법칙에 의해 예측된 상전이와 일치하였다. 기판 bias전압 인가시 발생한 이온충돌에 의한 충돌연쇄혼합(collisional cascade mixing), 성장박막 표면의 in situ cleaning, 핵생성처(nucleation site)이 증가로 인하여 상전이, CoSi(111)우선방위, 결정성은 증착온도에 비해 기판bias전압에 더 큰 영향을 받았다. $200^{\circ}C$에서 기판 bias전압을 증가시킴에 따라 이온충돌에 의한 결정입성장이 관찰되었으며, 이를 이온충독파괴(ion bombardment dissociation)모델에 의해 해석하였다. $200^{\circ}C$에서의 기판 bias전압증가에 따른 결정성변화를 정량적으로 고찰하기 위해 Langmuir탐침을 이용하여 $E_{Ar},\; \alpha(V_s)$를 계산하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.109-112
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• 2003

In this paper, we investigated the phosphor degradation characteristics on the ultra violet ray (UV) irradiation as well as ion bombardment. We propose a novel experiment method which is related with phosphor degradation causes. The phosphor deterioration experiments were made on the UV irradiation as well as ion bombardment. To carry out the experiment and compare the results, we made up the specific experimental setup. The results show that the deterioration by ion damage is more rigorous than that by vacuum ultra violet (VUV) on the phosphor efficiency.

• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.285-287
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• 2010

This paper introduces homogeneous liquid crystal (LC) orientations on chemically modulated polystyrene (PS) surfaces using various ion beam (IB) exposure times. Transparent PS was replaced with conventional polyimide material. As a non-contact process, the IB bombardment process induced LC orientation parallel to the IB process. Through x-ray photoelectron spectroscopy, it was shown that the chemical compositional changes of the IB-irradiated PS surfaces were determined as a function of IB exposure time. Using this analysis, the optimal IB bombardment condition was determined at an IB exposure time of up to 15 seconds. Moreover, thermal stability on IB-irradiated PS surfaces were carried out which showed that a relatively high IB exposure time induced a thermally stable LC alignment property.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.129-129
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• 1998

Most of the surface/interface analysis tools have limited depth profiling c capability in terms of the profiling range and the depth resolution. However, M MEIS can profile the surface and subsurface composition and structure q quantitatively and non-destructively with atomic layer depth resolution. I In this presentation, the MEIS system developed at KRISS will be briefly d described with an introduction on the principle of MEIS. Recent MEIS r results on the surface and interface composition and structural change due to i ion bombardment will be presented for preferential sputtering of T:없Os and d damage depth profiles of SHooD, Pt(l11), and Cu(l1D due to Ar+ ion b bombardment. Direct observation of strained Si lattices and its distribution i in the SHool)-SiCh interface and the initial stage of Co growth on Pt(l11) w will be reported. H surfactant effects on epitaxial growth of Ge on Si(ooD w will be discussed with STM results from SND.

• 전자공학회논문지D
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• 제35D권3호
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• pp.18-27
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• 1998

Molecular dynamicsinvestigations of ion implantation considering point defect generation were performed with ion energies in the range of ~1keV, Simulation starts perfect diamond cubic lattice site. Stillinger-Weber potential and ZBL potential were used to calculate forces between atoms. We have simulated slowing-down of ion velocity, ion trajectory and coupled-coing between ion and silicon. We also discussed distribution of point defect using rdial distribution function. We found that interstitial produced by ion bombardment mainly formed interstitial cluster.

• 열처리공학회지
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• 제23권1호
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• pp.23-28
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• 2010

The cylindrical magnetron sputtering has not been widely used, although this system is useful for only certain types of applications such as fiber coatings. This paper presents electrode configurations which improved the complicacy of the target assembly by using the positive voltage power supply. It is a modified type which has a target constructed with a large cylindrical part, a conical part and a small cylindrical part. When positive voltage was applied to an anode, a stable glow discharge was established and a high deposition rate was obtained. The substrate bias current was monitored to estimate the effect of ion bombardment. As a result, it was found that the substrate current was large. With cylindrical and conical cathode magnetron sputter deposition on the surface of the substrate to prevent re-sputtering, ion impact because it can increase the effectiveness with excellent ductility and adhesion of Ti film deposition can be obtained. We board at the front end of the ground resistance of $5\;k{\Omega}$ attached to the substrate potential can be controlled easily, and Ti film deposition with excellent adhesion can be obtained. Microstructure and morphology of Ti films deposited on pure Cu wires were investigated by scanning electron microscopy in relation to preparation conditions. High level ion bombardment was found to be effective in obtaining a good adhesion for Cu wire coatings.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2002년도 춘계학술발표회 초록집
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• pp.46-46
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• 2002

It is well known that thin film growth and surface morphology can be substantially modified by ion-bombardment during the deposition. This is particularly important in case of thin-film deposition at low temperatures where the film growth occurs under highly nonequilibrium conditions. An attractive way to promote crystalline growth and surface morphology is deposition of additional energy in to the surface of the growing film by bombardment with hyperthermal particles. We were deposited crystalline Ti and TiN thin films on Si substrate by magnetron sputtering method with grid. Its thin films were highly smoothed and dense as increasing grid bias. In order explore the benefits of a bombardment of the growing film with high energetic particles. Ti and TiN films were deposited on Si substrates by an unbalanced magnetron sputter source with attached grid assembly for energetic ion extraction. Also, we have studied the variation of the plasma states by Langmuir probe and Optical Emission Spectroscopy (OES). The epitaxial orientation. microstructual characteristics. electrical and surface properties of the films were analyzed by XRD. SEM. Four point probe and AFM.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
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• pp.21.2-21.2
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• 2007

• 한국진공학회지
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• 제4권S2호
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• pp.40-48
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• 1995

$TiB_2$-TiN double-layer coating have been prepared by ion beam enhanced deposition. AES, XRD, TEM and HRTEM were employed to characterize the $TiB_2$ layer. The microhardness of the coatings was evaluated by an ultra low-load microhardness indenter system, and the tribological behavior was examined by a ball-on-disc tribology wear tester. It was found that in a single titanium diboride layer, the composition is uniform along the depth of the film, and it is mainly composed of nanocrystalline $TiB_2$ with hexagonal structure, which resulted from the ion bombardment during the film growth. The hardness of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of the $TiB_2$ films increases with increasing ion energy, and approaches a maximum value of 39 Gpa at ion energy of 85 keV. The tribological property of the TiB2 films is also improved by higher energy of 85keV. The tribological property of the $TiB_2$ films is also improved by higher energy ion beam bombardment. There is no major disparity in the mechanical properties of double-layer $TiB_2$/TiN coatings and TiN/$TiB_2$ coatings. Both show an improved wear resistance compared with single-layer $TiB_2$ films. The adhesion of double-layer coatings is also superior to that of single-layer films.