• 제목/요약/키워드: intrinsic region

검색결과 165건 처리시간 0.025초

고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터 (A Novel Trench Electrode BRT with the Intrinsic Region for Superior Electrical Characteristics)

  • 강이구;성만영
    • 한국전기전자재료학회논문지
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    • 제15권3호
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    • pp.201-207
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    • 2002
  • In this paper, we haute proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. New power BRTs have shown superior electrical characteristics including the snab-back effect and the forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with the intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of the BRT is the avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develop a super high voltage power device and it applies to another power device including IGBT, EST and etc.

고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터 (A Novel Trench Electrode BRT with Intrinsic Region for High Blocking Voltage)

  • 강이구;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.243-246
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    • 2001
  • In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effict and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

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고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터 (A Novel Trench Electrode BRT with Intrinsic Region for High Blocking Voltage)

  • 강이구;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.243-246
    • /
    • 2001
  • In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

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Reference-Intrinsic Analysis for the Ratio of Two Normal Variances

  • Jang, Eun-Jin;Kim, Dal-Ho;Lee, Kyeong-Eun
    • Journal of the Korean Data and Information Science Society
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    • 제18권1호
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    • pp.219-228
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    • 2007
  • In this paper, we consider a decision-theoretic oriented, objective Bayesian inference for the ratio of two normal variances. Specifically we derive the Bayesian reference criterion as well as the intrinsic estimator and the credible region which correspond to the intrinsic discrepancy loss and the reference prior. We illustrate our results using real data analysis and simulation study.

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Reference-Intrinstic Analysis for the Difference between Two Normal Means

  • Jang, Eun-Jin;Kim, Dal-Ho;Lee, Kyeong-Eun
    • Communications for Statistical Applications and Methods
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    • 제14권1호
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    • pp.11-21
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    • 2007
  • In this paper, we consider a decision-theoretic oriented, objective Bayesian inference for the difference between two normal means with unknown com-mon variance. We derive the Bayesian reference criterion as well as the intrinsic estimator and the credible region which correspond to the intrinsic discrepancy loss and the reference prior. We illustrate our results using real data analysis as well as simulation study.

An Objective Bayesian Inference for the Difference between Two Normal Means

  • Jang, Eun-Jin;Kim, Dal-Ho;Lee, Kyeong-Eun
    • Journal of the Korean Data and Information Science Society
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    • 제17권4호
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    • pp.1365-1374
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    • 2006
  • In this paper, we consider a decision-theoretic oriented, objective Bayesian inference for the difference between two normal means with known variances. We derive the Bayesian reference criterion as well as the intrinsic estimator and the credible region which correspond to the intrinsic discrepancy loss and the reference prior. We show the similarity between derived two-sample results and the results for the one-sample case in Bernardo(1999).

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A Novel Trench Electrode BRT with the Intrinsic Region for Power Electronics

  • Kang, Ey-Goo;Oh, Dae-Suk;Kim, Dae-Won;Kim, Dae-Jong;Sung, Man-Young
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 ITC-CSCC -2
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    • pp.1038-1041
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    • 2002
  • In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power device and applicate to another power device including IGBT, EST and etc,

  • PDF

Dynamical transition of Josephson vortex lattice in serially stacked ${Bi_2}{Sr_2}{CaCu_2}{O_{8+x}}$ intrinsic Josephson junctions

  • Myung-Ho;Hu-Jong
    • Progress in Superconductivity
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    • 제6권1호
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    • pp.52-55
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    • 2004
  • The inductive coupling theory in serially stacked $Bi_2$$Sr_2$$CaCu_2$$O_{8+x}$ intrinsic Josephson junctions predicts that the lattice structure of the Josephson vortices along the c axis gradually changes from the triangular to the rectangular lattice with increasing the vortex velocity. This lattice transition appears as voltage jumps or sub-branch splitting in the Josephson vortex-flow region of current-voltage characteristics (IVC). We report the IVC in external magnetic fields from 2 to 4 T. The stack, with the lateral size of 1.4${\times}$15 $u\m^2$, was fabricated by using the double-side cleaving technique. The sub-branches in the Josephson vortex-flow region, corresponding to a plasma propagation mode in serially coupled intrinsic Josephson junctions, were also observed in the range of 2∼4T. Switching from one branch to another in Josephson vortex-flow region suggests the structural transition of the moving Josephson vortex lattice.

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Accuracy of linear approximation for fitted values in nonlinear regression

  • Kahng, Myung-Wook
    • Journal of the Korean Data and Information Science Society
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    • 제24권1호
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    • pp.179-187
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    • 2013
  • Bates and Watts (1981) have discussed the problems of reparameterizing nonlinear models in obtaining accurate linear approximation confidence regions for the parameters. A similar problem exists with computing confidence curves for fitted values or predictions. The statistical behavior of fitted values does not depend on the parameterization. Thus, as long as the intrinsic curvature is small, standard Wald intervals for fitted values are likely to be sufficient. Accuracy of linear approximation for fitted values is investigated using confidence curves.

INTRINSIC BRIGHTNESS TEMPERATURE OF COMPACT RADIO SOURCES AT 86GHZ

  • Lee, Sang-Sung
    • 천문학회지
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    • 제46권6호
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    • pp.243-251
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    • 2013
  • We present results on the intrinsic brightness temperature of a sample of compact radio sources observed at 86 GHz using the Global Millimeter VLBI Array. We use the observed brightness temperatures at 86 GHz and the observed superluminal motions at 15 GHz for the sample in order to constrain the characteristic intrinsic brightness temperature of the sample. With a statistical method for studying the intrinsic brightness temperatures of innermost jet cores of compact radio sources, assuming that all sources have the same intrinsic brightness temperature and the viewing angles of their jets are around the critical value for the maximal apparent speed, we find that sources in the sample have a characteristic intrinsic brightness temperature, $T_0=4.8^{+2.6}_{-1.5}{\times}10^9K$, which is lower than the equipartition temperature for the condition that the particle energy equals to the magnetic field energy. Our results suggest that the VLBI cores seen at 86 GHz may be representing a jet region where the magnetic field energy dominates the total energy in the jet.