• Title/Summary/Keyword: intrinsic region

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A Novel Trench Electrode BRT with the Intrinsic Region for Superior Electrical Characteristics (고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터)

  • 강이구;성만영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.201-207
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    • 2002
  • In this paper, we haute proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. New power BRTs have shown superior electrical characteristics including the snab-back effect and the forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with the intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of the BRT is the avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develop a super high voltage power device and it applies to another power device including IGBT, EST and etc.

A Novel Trench Electrode BRT with Intrinsic Region for High Blocking Voltage (고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터)

  • Kang, Ey-Goo;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.243-246
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    • 2001
  • In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effict and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

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A Novel Trench Electrode BRT with Intrinsic Region for High Blocking Voltage (고내압 특성을 위한 진성영역과 트렌치 구조를 갖는 베이스 저항 사이리스터)

  • 강이구;성만영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11a
    • /
    • pp.243-246
    • /
    • 2001
  • In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

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Reference-Intrinsic Analysis for the Ratio of Two Normal Variances

  • Jang, Eun-Jin;Kim, Dal-Ho;Lee, Kyeong-Eun
    • Journal of the Korean Data and Information Science Society
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    • v.18 no.1
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    • pp.219-228
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    • 2007
  • In this paper, we consider a decision-theoretic oriented, objective Bayesian inference for the ratio of two normal variances. Specifically we derive the Bayesian reference criterion as well as the intrinsic estimator and the credible region which correspond to the intrinsic discrepancy loss and the reference prior. We illustrate our results using real data analysis and simulation study.

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Reference-Intrinstic Analysis for the Difference between Two Normal Means

  • Jang, Eun-Jin;Kim, Dal-Ho;Lee, Kyeong-Eun
    • Communications for Statistical Applications and Methods
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    • v.14 no.1
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    • pp.11-21
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    • 2007
  • In this paper, we consider a decision-theoretic oriented, objective Bayesian inference for the difference between two normal means with unknown com-mon variance. We derive the Bayesian reference criterion as well as the intrinsic estimator and the credible region which correspond to the intrinsic discrepancy loss and the reference prior. We illustrate our results using real data analysis as well as simulation study.

An Objective Bayesian Inference for the Difference between Two Normal Means

  • Jang, Eun-Jin;Kim, Dal-Ho;Lee, Kyeong-Eun
    • Journal of the Korean Data and Information Science Society
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    • v.17 no.4
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    • pp.1365-1374
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    • 2006
  • In this paper, we consider a decision-theoretic oriented, objective Bayesian inference for the difference between two normal means with known variances. We derive the Bayesian reference criterion as well as the intrinsic estimator and the credible region which correspond to the intrinsic discrepancy loss and the reference prior. We show the similarity between derived two-sample results and the results for the one-sample case in Bernardo(1999).

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A Novel Trench Electrode BRT with the Intrinsic Region for Power Electronics

  • Kang, Ey-Goo;Oh, Dae-Suk;Kim, Dae-Won;Kim, Dae-Jong;Sung, Man-Young
    • Proceedings of the IEEK Conference
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    • 2002.07b
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    • pp.1038-1041
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    • 2002
  • In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power device and applicate to another power device including IGBT, EST and etc,

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Dynamical transition of Josephson vortex lattice in serially stacked ${Bi_2}{Sr_2}{CaCu_2}{O_{8+x}}$ intrinsic Josephson junctions

  • Myung-Ho;Hu-Jong
    • Progress in Superconductivity
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    • v.6 no.1
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    • pp.52-55
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    • 2004
  • The inductive coupling theory in serially stacked $Bi_2$$Sr_2$$CaCu_2$$O_{8+x}$ intrinsic Josephson junctions predicts that the lattice structure of the Josephson vortices along the c axis gradually changes from the triangular to the rectangular lattice with increasing the vortex velocity. This lattice transition appears as voltage jumps or sub-branch splitting in the Josephson vortex-flow region of current-voltage characteristics (IVC). We report the IVC in external magnetic fields from 2 to 4 T. The stack, with the lateral size of 1.4${\times}$15 $u\m^2$, was fabricated by using the double-side cleaving technique. The sub-branches in the Josephson vortex-flow region, corresponding to a plasma propagation mode in serially coupled intrinsic Josephson junctions, were also observed in the range of 2∼4T. Switching from one branch to another in Josephson vortex-flow region suggests the structural transition of the moving Josephson vortex lattice.

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Accuracy of linear approximation for fitted values in nonlinear regression

  • Kahng, Myung-Wook
    • Journal of the Korean Data and Information Science Society
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    • v.24 no.1
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    • pp.179-187
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    • 2013
  • Bates and Watts (1981) have discussed the problems of reparameterizing nonlinear models in obtaining accurate linear approximation confidence regions for the parameters. A similar problem exists with computing confidence curves for fitted values or predictions. The statistical behavior of fitted values does not depend on the parameterization. Thus, as long as the intrinsic curvature is small, standard Wald intervals for fitted values are likely to be sufficient. Accuracy of linear approximation for fitted values is investigated using confidence curves.

INTRINSIC BRIGHTNESS TEMPERATURE OF COMPACT RADIO SOURCES AT 86GHZ

  • Lee, Sang-Sung
    • Journal of The Korean Astronomical Society
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    • v.46 no.6
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    • pp.243-251
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    • 2013
  • We present results on the intrinsic brightness temperature of a sample of compact radio sources observed at 86 GHz using the Global Millimeter VLBI Array. We use the observed brightness temperatures at 86 GHz and the observed superluminal motions at 15 GHz for the sample in order to constrain the characteristic intrinsic brightness temperature of the sample. With a statistical method for studying the intrinsic brightness temperatures of innermost jet cores of compact radio sources, assuming that all sources have the same intrinsic brightness temperature and the viewing angles of their jets are around the critical value for the maximal apparent speed, we find that sources in the sample have a characteristic intrinsic brightness temperature, $T_0=4.8^{+2.6}_{-1.5}{\times}10^9K$, which is lower than the equipartition temperature for the condition that the particle energy equals to the magnetic field energy. Our results suggest that the VLBI cores seen at 86 GHz may be representing a jet region where the magnetic field energy dominates the total energy in the jet.