• Bulletin of the Korean Chemical Society
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• v.6 no.6
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• pp.362-366
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• 1985

The hydrogen atom transfer reaction between substituted methane, $CH_3X,$ and its radical, $CH_2X(X=H,F,CH_3,CN,OH\;and\;NH_2$ was studied by MINDO/3 method. The transition state(TS) structure and energy barriers were determined and variation of the transition state and of the reactivity due to the change of X were analyzed based on the potential energy surface characteristics. It was found that the greater the radical stabilization energy. the looser the TS becomes; the TS occurs at about 15% stretch of the C-H bond, which becomes longer as the radical stabilization energy of $CH_2X$ increasers. The intrinsic barrier, ${\Delta}E*_{x.x},$ of the reaction with X was found to increase in the order $H The degree of bond stretch of the C-H bond stretch of the C-H bond at the TS also had the same order indicating that the homolytic bond cleavage of the C-H bond is rate-determining. Orbital interactions at the TS between LUMO of the fragment $C{\ldots}H{\ldots}C$ and the symmetry adapted pair of nonbonding, $n{\pm}(=n_1{\pm}n_2),$ or pi orbitals of the two X atoms were shown to be the dominant contribution in determining tightness or looseness of the TS. The Marcus equation was shown to apply to the MINDO/3 barriers and energy changes of the reaction.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.172-178
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• 2016

In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.

• The Journal of Engineering Geology
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• v.7 no.3
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• pp.229-245
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• 1997

There are Common aspects between the underground oil storage cavern and the radioactive waste disposal facility. Both facilities use appropriately the intrinsic natural berrier characteristics of the rock mass and additionally the engineered barrier system for the long term safety. The geological structures and their hydrogeological characteristics in a faactured rock mass act a major role in the safety and performance of the underground oil storage facility through the design, construction and the operation stages. Because the fracture system distributed in a fractured rock block is complicated owing to their own geometrical and hydrogeological attributes, the hydrogeological perforrmrnce of the facility would depend mainly upon the understandings of their characteristics. This study reviews the uncertainties and key issues which have to be considered to analyse the groundwater flow system in a fractured rock mass and proposes the techniques applicable to characterize the hydrogeological parameter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.192-197
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• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.

• Journal of Powder Materials
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• v.11 no.1
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• pp.8-15
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• 2004

The basic concept of functionally gradient materials (FGM) is to fabricate materials type having possibilities of applications in various fields by changing their intrinsic properties with continuous gradient. The present communication has reviewed the developments and applications of various FGMs designed for improved thermo-mechanical properties, in which the thermal protective and wear resistant materials are especially focused. Effects of thermo-mechanical properties and limits of FGMs designed for high temperature applications were mainly understood in terms of residual stress evolved from the design and fabrication. In addition, FGMs applied in structural parts were also introduced and discussed in terms of typical fabrication method for FGMs.

• Journal of Digital Convergence
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• v.13 no.7
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• pp.125-136
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• 2015

Due to globalization, more foreign-owned small businesses have been joining the South Korean economy. In order to better support the growth, this study's purpose is to identify foreign entrepreneur demographics and company information as well as entrepreneurial motivations and perceived success factors. To fulfill these goals, a survey of 98 immigrant entrepreneurs from 31 countries doing business within the local Korean market was conducted. The results show that most foreign-owned small businesses are service-oriented and primarily started for intrinsic reasons. It was also identified that the perceived business success determinants that the government can most directly affect are skills-based, rather than infrastructure or financially oriented. Furthermore, top issues include unreliable employees, language barrier and too much competition. The findings of this study are particularly relevant to both academics and policy makers alike because almost no prior foreign entrepreneur-focused research has been conducted in Korea.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1000-1006
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• 2007

This paper presents a power detector circuit which monitors the transmitting power for the application in CDMA cell phones. The proposed power detector are composed of coupler for coupling output power and detector fur monitoring output power. The designed coupler has low loss characteristic because it adopts the stripline structure which consists of two ground planes at both sides of signal plane. The design frequency is 824-849MHz which is the Tx band fur CDMA mobile terminal, and the coupling factor of the stripline coupler is -20dB. A schottky barrier diode is adopted for detector design because of its high speed operation with minimized loss. The required impedance matching is performed to improve the linearity and sensitivity of output voltage at relatively low detector input level where the nonlinear characteristic of diode exists. The package parasitics as well as intrinsic diode model are considered for simulation of the detector. The predicted performances agree well with the measured results.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]