• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.178-184
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• 1999

We have measured I-V characteristics of Bi$_2Sr_2CaCu_2O_{8+{\delta}}$ mesa containing a small number of intrinsic stacked Josephson junctions in a magnetic field. We fabricated mesa with an area of 40${\times}$40 ${\mu}$m$^2$ containing 3${\sim}$20 intrinsic junctions. We applied magnetic field perpendicular to He CuO$_2$ planes up to 5T. We observed flux-flow branches and flux-flow steps in the I-V characteristics which might be due to collective motion of Josephson vortices in the long junction limit. In a parallel field, critical current I$_c$ varies as I$_c$(B) ${\sim}$ exp(-B/B$_0$), where B$_0$ is about 2T, which is consistent with the theoretical model. DC and AC intrinsic Josephson effects are also discussed.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
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• pp.32-32
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• 2005

• Progress in Superconductivity
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• 제11권1호
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• pp.36-41
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• 2009

Superconducting quantum phenomena are getting attention from the field of metrology area. Following its first successful application of Josephson effect to voltage standard, piconewton force standard was suggested as a candidate for the next application of superconducting quantum effects in metrology. It is predicted that a micron-sized superconducting Nb ring in a strong magnetic field gradient generates a quantized force of the order of sub-piconewtons. In this work, we studied the design and fabrication of Nb superconducting quantum interference device (SQUID) on an ultra-thin silicon cantilever. The Nb SQUID and electrodes were structured on a silicon-on-insulator (SOI) wafer by dc magnetron sputtering and lift-off lithography. Using the resulting SOI wafer, we fabricated V-shaped and parallel-beam cantilevers, each with a $30-{\mu}m$-wide paddle; the length, width, and thickness of each cantilever arm were typically $440{\mu}m,\;4.5{\mu}m$, and $0.34{\mu}m$, respectively. However, the cantilevers underwent bending, a technical difficulty commonly encountered during the fabrication of electrical circuits on ultra-soft mechanical substrates. In order to circumvent this difficulty, we controlled the Ar pressure during Nb sputtering to minimize the intrinsic stress in the Nb film and studied the effect of residual stress on the resultant device.