• Journal of the Korean Magnetics Society
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• v.14 no.6
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.487-490
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• 2002

In this paper, we report a novel way to evaluate the anticlinic interlayer coupling coefficient U between smectic layers of an antiferroelectric liquid crystal, by utilizing a small field-induced perturbation of the molecular orientation. U was found to exhibit an unusual "S-shaped" dependence on temperature, with values ranging between $0.4{\times}10^4$ and $0.4{\times}10^{-1}$ erg $cm^{-3}$ over a 10$^{\circ}C$ temperature range below smectic A-smectic $C_A$ phase transition temperature. The results are good agreement with estimates for U based upon the threshold field for the onset of solitary waves, and provide strong supporting the low-field regime for the single Fourier component model.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1060-1065
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• 1996

We have studied the magnetoresistance phenomena on spin valve thin films of antiferromagnetic NiO/CoO. Interlayer coupling oscillates between the antiferrocoupling and ferrocoupling with the variation of Cu thickness. The exchange coupling strength between NiO (antiferromagnetic) and NiFe(ferromagnetic) as a function of NiO texture and interface roughness is investigated by CoO insertion. CoO has significantly higher anisotropy in the (111) plane and interface roughness. It seems that the MR-ratio is increased by CoO inserted films. From the AFM and XRD data, the increase of MR-ratio and exchange field is influenced by the roughness of CoO.

• Journal of Magnetics
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• v.3 no.3
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• pp.92-95
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• 1998

In this paper we report the low and high angle diffraction results, and the magnetic and magnetroesistive characteristics of the spin valve multilayer structure prepared by the sputter machine Emerald II in the Balzers Laboratory. The investigated system consists of a ferromagnetic free layer (7 nm NiFe) and a ferromagnetic pinned layer (7 nm NiFe), separated from each other by a nonmagnetic (2.1 nm Cu) spacer. The NiFe pinned layer is fixed by the exchange coupling with an antiferromagnetic layer (10 nm FeMn). For such system the magnetoresistance ratio ΔR/R=3.58%, the interlayer exchange coupling $H_c=6.4$ Oe and the field sensitivity 1.15%/Oe were otained.

• Journal of the Korean Magnetics Society
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• v.27 no.3
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• pp.82-86
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• 2017

The IrMn based GMR-SV films with three different buffer layers were prepared on Corning glass by using ion beam deposition and DC magnetron sputtering method. The major and minor magnetoresistance curves for three different buffer layers beneath the structure of NiFe(15 nm)/CoFe(5 nm)/Cu(2.5 nm)/CoFe(5 nm)/NiFe(7 nm)/IrMn(10 nm)/Ta(5 nm) at room temperature have shown different magnetoresistance properties. When the samples were annealed at $250^{\circ}C$ in vacuum, the magnetoresistance ratio, the coercivity of pinned ferromagnetic layer, and the interlayer coupling field of free ferromagnetic layer were enhanced while the exchange bias coupling field did not show noticeable changes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.367-367
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• 2012

We investigate Landau level spectra of twisted bilayer graphene under a perpendicular magnetic field, showing that the layers provide rich electronic structure depending on misoriented angle. New types of excitations with Landau level sequences due to the reflection of interlayer coupling level are matter of interest in the present work. We calculate the electronic structure of bilayer systems with a relative small angle rotation of the two graphene layers. Calculated Landau level spectra for twisted bilayer graphene using a continuum formulation are in good agreement with existing experimental and theoretical studies. Twist angle dependent numerical simulations provide significant insights for the nature of the Landau level spectra in bilayer graphene, combining signals from both massive and massless Dirac fermions. We finally discuss the influence of the graphene layers in the experimental sample that related to the magneto-transport measurements including quantum Hall conductance.

• Journal of Magnetics
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• v.10 no.3
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• pp.113-117
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• 2005

Some polycrystalline ferromagnetic mms are composed of continuously connected nanometer scale islands with random crystallite orientations. The nanometer perturbations of the mm introduce a large number of nearly degenerate local field configurations that are indistiguishable on a macroscopic scale. As a first step, this situation is modelled as a thin ferromagnetic disc coupled by exchange and dipole interactions to a homogeneous ferromagnetic plane, where the disc and plane have different easy axes. The model is solved to find the partial $N\acute{e}el$ domain walls that minimize the magnetic energy. The two solutions give a bistable configuration that, for appropriate geometries, provides an important microsopic ferromagnetic degree of freedom for the mm. These results are used to interpret recent measurements of exchange biased bilayer films.

• Journal of the Korean Magnetics Society
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• v.7 no.5
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• pp.265-273
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• 1997

The MR ratios and the exchange biasing field and interlayer coupling field were investigated in $Ni_{91}Fe_{19}/Co_{90}Fe_{10}/Cu/Co_{90}Fe_{10}/NiO$ spin-valve sandwiches grown on antiferromagnetic NiO films as a function of the NiO thickness, the thickness of Cu and pinning layer $Co_{90}Fe_{10}$. The spin-valve sandwiches were deposited on the Corning glass 7059 by means of the 3-gun dc and 1-gun rf magnetron sputtering at a 5 mtorrpartial Ar pressure and room temperature. The deposition field was 50 Oe. The MR curve was measured by the four-terminal method with applied magnetic soft bilayer [NiFe/CoFe] (90$\AA$) decreased dramatically to less than 10 Oe when the NiFe/CoFe bilayer used an NiFe bilayer thicker that 20$\AA$. So NiFe layer improved the softmagnetic properties in the NiFe/CoFe bilayer. The GMR ratio and the magnetic field sensitivity of the spin-valve film $Ni_{91}Fe_{19}(40{\AA})/Co_{90}Fe_{10}(50{\AA}) /Cu(30{\AA})/Co_{90}Fe_{10}(35{\AA})/NiO(800{\AA})$ was 6.3% and about 0.5 (%/Oe), respectively. The MR ratio had 5.3% below an annealing temperature of 20$0^{\circ}C$ which slowly decreased to 3% above 30$0^{\circ}C$. The large blocking temperature of the spin-valve film was taken (as being) due to the good stability of the NiO films. Thus, the spin-valve films with a free NiFe/CoFe layer clearly had a high large GMR output and showed a effective magnetic field sensitivity for a suitable spin-valve head material.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.62-66
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• 2000

Annealing cycle number and nonmagnetic layer thickness dependences of interlayer coupling field ( $H_{inf}$ ) and coercivity ( $H_{cf}$ ) of free magnetic layer on NiMn alloy-spin valve films (SVF) were investigated. The SVF is Glass (7059)/N $i_{81}$F $e_{l9}$(70 $\AA$)/Co(10 $\AA$)/Cu(t $\AA$)/Co(15 $\AA$)N $i_{81}$$Fe_{19}$(35 $\AA$)/N $i_{25}$M $n_{75}$(250 $\AA$)Ta(50 $\AA$) films, it were fabricated using the dc sputtering method at different pinning layer thickness and nonmagnetic spacer thickness (Cu thickness; 30 $\AA$, 35 $\AA$, 40 $\AA$) of NiMn alloy with 25 at.%. Ni In case that Cu thickness of SVF is 35 $\AA$ and peak exchange coupling field ( $H_{ex}$) was 620 Oe, while coercivity $H_{c}$ = 280 Oe and MR ratio showed 2.5%. As for $H_{inf}$ and $H_{cf}$ , every SVF increased up to the stabilized values with the increase of annealing cycle number 15, which were $H_{inf}$ of 120 Oe and $H_{cf}$ of 75 Oe. The increase of $H_{cf}$ with the annealing cycle number seems to be caused by the effective reduction of Cu layer thickness due to the increase of interfacial mixing of Cu layer and Co layer. In addition, the $H_{inf}$ and $H_{cf}$ dependences of free NiFe layer by the interfacial mixing effect were appeared the different aspects when Cu layer becomes more thinner and thicker than Cu layer thickness of 35 $\AA$, respectively.ively....

• Journal of Adhesion and Interface
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• v.24 no.3
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• pp.100-104
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• 2023

Van der Waals heterostructures have garnered significant attention in recent research due to their excellent electronic characteristics arising from the absence of dangling bonds and the exclusive reliance on Van der Waals forces for interlayer coupling. However, most studies have been confined to fundamental research employing the Scotch tape (mechanical exfoliation) method. We fabricated Van der Waals vertical heterojunction transistors to advance this field using materials exclusively grown via chemical vapor deposition (CVD). CVDgrown graphene was patterned through photolithography to serve as electrodes, while CVD-grown MoSe₂ was employed as the pickup/transfer material, resulting in the realization of Van der Waals heterojunction transistors with interlayer charge transfer effects. The electrical characteristics of the fabricated devices were thoroughly examined. Additionally, we observed variations in the transistor's performance based on the presence of defects in MoSe₂ layer.