• Proceedings of the Korean Nuclear Society Conference
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• 1998.05a
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• pp.565-570
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• 1998

An interfacial condensation heat transfer phenomenon in a steam/water countercurrent stratified flow in a nearly horizontal pipe has been experimentally investigated. The present study has been focused on the measurement of the temperature and velocity distributions within the water layer. In particular, the water layer thickness used in the present work is large enough so that the turbulent mixing is limited and the thermal stratification is established. As a result, the thermal resistance of the water layer to the condensation heat transfer is increased significantly. An empirical correlation of the interfacial condensation heat transfer has been developed. The present correlation agrees with the data within $\pm$15%

• Journal of the Semiconductor & Display Technology
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• v.20 no.1
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• pp.113-117
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• 2021

A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 1.5~3.5 wt % PVP GQD, Vf changed from 2.16 ~ 2.72 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. The Al + ions are reduced and the device dominates at low resistance. In addition, as the PVP GQD concentration increased, the depth of the interfacial defect decreased, and the repetition of appropriate electrical properties was confirmed through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

• Journal of the Korean Society for Nondestructive Testing
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• v.23 no.6
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• pp.577-582
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• 2003

This paper describes a new technique for thickness measurement of a very thin layer less than one-quarter of the wavelength of ultrasonic wave used in the ultrasonic pulse-echo measurements. The technique determines the thickness of a thin layer in a tapered medium from constructive interference of multiple reflection waves. The interference characteristics are derived and investigated in theoretical and experimental approaches. Modified total reflection wave g(t) defined as difference between total and first reflection waves increases in amplitude as the interfacial layer thickness decreases down to zero. A layer thickness less than one-tenth of the ultrasonic wavelength is measured using the maximum amplitude of g(t) with a good accuracy and sensitivity. The method also requires no inversion process to extract the thickness information from the waveforms of reflected waves, so that it makes possible to have the on-line thickness measurement of a thin layer such as a lubricating oil film in thrust bearings and journal bearings during manufacturing process.

• 한국초전도학회:학술대회논문집
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• v.14
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• pp.80-80
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• 2004

• Nuclear Engineering and Technology
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• v.32 no.2
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• pp.142-156
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• 2000

An experimental study of steam condensation on a subcooled thick water layer (0.018 ~0.032 m) in a countercurrent stratified flow has been performed using a nearly horizontal circular pipe. A total of 103 average interfacial condensation heat transfer coefficients were obtained and parametric effects of steam and water flow rates and the degree of subcooling on condensation heat transfer were examined. The measured local temperature and velocity distributions in the thick water layer revealed that there was a thermal stratification due to the lack of full turbulent thermal mixing in the lower region of the water layer Two empirical Nusselt number correlations, one in terms of average steam and water Reynolds numbers, and the water Prandtl number, and the other in terms of the Jakob number in place of the Prandtl number, which agree with most of the data within $\pm$ 25%, were developed based on the bulk flow properties. Comparisons of the present data with existing correlations showed that the present data were significantly lower than the values predicted by existing correlations.

• Proceedings of the KOSOMBE Conference
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• v.1997 no.05
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• pp.35-38
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• 1997

The interfacial bonding energy between laser surface treated HA layer and Ti alloy substrate was investigated using a mechanical push-out tester. The initial slope of shear-stress and reduced displacement curves, maximum interfacial bond strength and bonding energy were calculated from results of the push-out test. The calculated initial slpoes are 38 MPa for the Ti alloy(A), 65 MPa for the sandblast finished specimen(B), 95 MPa for the HA plasma spray coated specimen and 49 MPa for the laser surface treated specimen(D). The maximum interfacial bonding strength are 3 MPa for the A, 19 MPa for the B, 20 MPa for the C, 10 MPa for the D. The interfacial bonding energies are $3.3\times10^{-9}J/mm^2$ for the A, $15.5\times10^{-9}J/mm^2$ for the B, $15.6\times10^{-9}J/mm^2$ for the C and $18.3\times10^{-9}J/mm^2$ for the D. Microscopic observation shows that the breaking of the laser treated specimen had been occured through the boundary between HA layer and polymer resin, but the untreated specimen had been occured through the inside of HA coating layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.74-74
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• 2011

Polymer solar cells utilize bulk heterojunction (BHJ) type photo-active layer in which the electron donating polymer and electron accepting C60 derivatives are mixed together. In the BHJ system the electron donating polymer and electron accepting C60 derivatives are blended. The blended system causes charge recombination at the interface between the BHJ active layer and electrode. To reduce the charge recombination at the interface, it is needed to use an interlayer that can selectively transfer electrons or holes. We have developed solution processable wide band gap inorganic interfacial layers for polymer solar cells. The effect of interlayers on the performance of polymer solar cell was investigated for various types of conjugated polymers. We have found that inorganic interfacial layers enhanced the solar cell efficiency through the reduction of charge recombination at the interface between active layer and electrode. Furthermore, the stability of the polymer solar cell using the interlayer was significantly improved. The efficiency of 6.5% was obtained from the PTB7:PCBM70 based solar cells utilizing $TiO_2$nanoparticles as an interlayers.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.7-12
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• 2018

The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.70-75
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• 2011

We introduced nanoscale interfacial layers between the PV layer and the cathode in poly (3-hexylthiophene):methanofullerene bulk-heterojunction polymer photovoltaic (PV) cells. The nanoscale double interfacial layers were made of ultrathin poly (oxyethylenetridecylether) surfactant and low-work-function alloy-metal of Al:Li layers. It was found that the nanoscale interfacial layers increase the photovoltaic performance, i.e., increasing short-circuit current density and fill factor with improved device stability. For PV cells with the nanoscale double interfacial layers, an increase in power conversion efficiency of $4.18{\pm}0.24%$ was achieved, compared to that of the control devices ($3.89{\pm}0.08%$) without the double interfacial layers.