• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.223-227
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• 2004

We have studied the interfacial diffusion of Fe/Cr multilayers using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and high-resolution x-ray scattering. The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers increased with the Cr-layer thickness. The Fourier transform (FT) of EXAFS data clearly showed that the Fe atoms dominantly diffused into the stable Cr layers at the Fe/Cr interface. The results of high-resolution x-ray scattering supported the interfacial diffusion of Fe atoms. Out study revealed that the dominantly interfacial diffusion of Fe atoms into the Cr layers effects the interfacial roughness of the Fe/Cr multilayers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.267-270
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• 2003

We have studied the interfacial diffusion phenomena and the role of ${\alpha}-Al_2O_3$ buffer layer as a diffusion barrier in the $Ba-ferrite/SiO_2$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite ($1900-{\AA}-thick)/SiO_2$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_2O_3$ buffer layer ($110-{\AA}-thick$) in the interface of $Ba-ferrite/SiO_2$ thin film. During the annealing of $Ba-ferrite/{\alpha}-Al_2O_3/SiO_2$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The smooth interface of the film was also clearly shown by the cross-sectional FESEM. The magnetic properties, such as saturation magnetization 3nd intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_2O_3$ buffer layer. Our study suggests that the ${\alpha}-Al_2O_3$ buffer layer act as a useful interfacial diffusion barrier in the $Ba-ferrite/SiO_2$ thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.84-87
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• 2003

The interfacial diffusion in Fe/Cr/MgO(001) multilayers has been studied using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and anomalous x-ray scattering (AXS). The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers with Cr-$4{\AA}$-thick was larger than that with Cr-$4{\AA}$-thick. The results of EXAFS indicated that the Fe element dominantly diffuse into the stable Cr layers at the Fe/Cr interface. The AXS was certified the existence of the interdiffused Fe element in the Cr layers. Our study revealed that the rough interface of the Fe/Cr multilayers was caused by the interfacia diffusion of Fe element into the Cr layers.

• Journal of the Korean Electrochemical Society
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• v.4 no.1
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• pp.21-25
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• 2001

This article is concerned with the application of the fractal geometry to interfacial electrochemistry. Especially, we dealt with diffusion kinetics at the fractal electrodes. This article first explained the basic concepts of the Sacral geometry which has proven to be fruitful for modelling rough and irregular surfaces. Finally this article examined the electrochemical responses to various signals under diffusion-limited reactions during diffusion towards the fractal interfaces: The generalised forms, including the fractal dimension of the electrode surfaces, of Cottrell, Sand and Randles-Sevcik equations were theoretically derived and explained in chronoamperomety, chronopotentiometry and linear sweep/cyclic voltammetry, respectively.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Proceedings of the Korean Society For Composite Materials Conference
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• 1999.11a
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• pp.32-35
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• 1999

Poly(arylene ether phosphin oxide) (PEPO), Udel$^{\circledR}$ P-1700, Ultem$^{\circledR}$ 1000. poly(hydroxy ether) (PHE), carboxy modified poly(hydroxy ether)(C-PHE) and poly(hydroxy ether ethanol amine) (PHEA) were utilized for a coating of carbon fibers. Interfacial shear strength(IFSS) of polymers to carbon fibers was also evaluated in order to understand the adhesion mechanism. IFSS was measured via micro-droplet tests, and failure surfaces were analyzed by SEM. Diffusion between polymer and vinyl ester resin was investigated as a function of styrene content; 33. 40 or 50wt.% and the solubility parameters of polymers were calculated. The results were correlated to the interfacial shear strength. The highly enhanced interfacial shear strength (IFSS) was obtained with PEPO coating, and marginally improved IFSS with PHE, Udel$^{\circledR}$ and C-PHE coatings, but no improvement with PHEA and Ultem$^{\circledR}$ coatings.

• Composites Research
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• v.12 no.6
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• pp.15-21
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• 1999

Carbon fibers were coated with carboxy modified poly(hydroxy ether)(C-PHE, water dispersed), water soluble polymers poly(hydroxy ether ethanol amine)(PHEA) or water insoluble poly(hydroxy ether)(PHE). Interfacial shear strength of polymer coated carbon fibers was measured by micro-droplet tests with vinyl ester resin, and approximately 30 samples were tested. The interfacial adhesion of poly-mers to carbon fibers was also evaluated, and diffusion behavior of polymer films in vinyl ester resin was investigated. The carbon fibers after testing and diffusion samples were analysed by SEM in order to understand adhesion mechanism. Interfacial shear strength of carbon fibers was enhanced by the coating of PHE and C-PHE which have good or marginal solubility in vinyl ester resin, respectively, but not by the coating of PHEA possibly due to the poor solubility in vinyl ester resin.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.115.1-115.1
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• 2014

Atom-thick 2-dimensional materials such as graphene, h-BN and MoS2 hold substantial potential for applications in future molecular-scale integrated electronics, transparent conducting membranes, nanocomposites, etc. From a fundamental point of view, 2-dim crystal-solid substrates can also serve as a unique system to study various physicochemical phenomena occurring at low dimensions or interfaces. In this talk, I will present our recent Raman spectroscopy studies on the surface science problems of graphene: interfacial charge transfer, molecular diffusion in confined space and structural deformation.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.7-12
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• 2018

The effects of Ru deposition temperature and post-annealing conditions on the interfacial adhesion energies of atomic layer deposited (ALD) Ru diffusion barrier layer and Cu thin films for the advanced Cu interconnects applications were systematically investigated. The initial interfacial adhesion energies were 8.55, 9.37, $8.96J/m^2$ for the sample deposited at 225, 270, and $310^{\circ}C$, respectively, which are closely related to the similar microstructures and resistivities of Ru films for ALD Ru deposition temperature variations. And the interfacial adhesion energies showed the relatively stable high values over $7.59J/m^2$ until 250h during post-annealing at $200^{\circ}C$, while dramatically decreased to $1.40J/m^2$ after 500 h. The X-ray photoelectron spectroscopy Cu 2p peak separation analysis showed that there exists good correlation between the interfacial adhesion energy and the interfacial CuO formation. Therefore, ALD Ru seems to be a promising diffusion barrier candidate with reliable interfacial reliability for advanced Cu interconnects.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.73-74
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• 1992