• Title/Summary/Keyword: interfacial adhesion

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Curing Behavior and Interfacial Properties of Electrodeposited Carbon Fiber/Epoxy Composites by Electrical Resistivity Measurement under Tensile/Compressive Tests (전기증착된 탄소섬유/에폭시 복합재료의 인장/압축 하중하에서의 전기저항 측정법을 이용한 경화 및 계면특성)

  • Park, Joung-Man;Lee, Sang-Il;Kim, Jin-Won
    • Journal of Adhesion and Interface
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    • v.2 no.1
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    • pp.9-17
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    • 2001
  • Curing behavior and interfacial properties were evaluated using electrical resistance measurement and tensile/compressive fragmentation test. Electrical resistivity difference (${\Delta}R$) during curing process was not observed in a bare carbon fiber. On the other hand, ${\Delta}R$ appeared due to the matrix contraction in single-carbon fiber/epoxy composite. Logarithmic electrical resistivity of the untreated single-carbon fiber composite increased suddenly to the infinity when the fiber fracture occurred under tensile loading, whereas that of the ED composite reached relatively broadly up to the infinity. Comparing to the untreated case, interfacial shear strength (IFSS) of the ED treated composite increased significantly in both tensile fragmentation and compressive Broutman test. Microfailure modes of the untreated and the ED treated fiber composite showed the debonding and the cone shapes in tensile test, respectively. For compressive test, fractures of diagonal slippage were observed in both untreated and the ED treated composite. Sharp-end shape fractures exhibited in the untreated composite, whereas relatively dull fractures showed in the ED Heated composite. It is proved that ED treatments affected differently on the interfacial adhesion and microfailure mechanism under tensile/compressive tests.

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Thermal Stability and Mechanical Interfacial Properties of DGEBA/PMR-15 Blend System Initiated by Cationic Latent Thermal Catalyst (잠재성 양이온 개시제를 이용한 DGEBA/PMR-15 블렌드계의 열안정성 및 기계적 계면 특성에 관한 연구)

  • Park, Soo-Jin;Lee, Hwa-Young;Han, Mijeong;Hong, Sung-Kwon
    • Journal of Adhesion and Interface
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    • v.5 no.1
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    • pp.3-11
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    • 2004
  • In this work, the cure behaviors of the DGEBA/PMR-15 blends initiated by N-benzylpyrazinium hexafluoroantimonate (BPH) as a cationic latent catalyst were performed in DSC and DMA analyses. And, the thermal stabilities were carried out by TGA analysis and their mechanical interfacial properties of blends were measured in the context of critical stress intensity factor ($K_{IC}$). As a result, the curing activation energy ($E_a$) determined from Ozawa's equation in DSC and the relaxation activation energy ($E_r$) from DMA were increased with increasing PMA-15 content. Also, the thermal stabilities obtained from the integral procedural decomposition temperature (IPDT) and the glass transition temperature ($T_g$) were highly improved with increasing the PMR-15 content, which were probably due to the high heat resistance. And, the $K_{IC}$ showed a similar behavior with $E_a$, which was attributed to the improving of the interfacial adhesion or hydrogen bondings between intermolecular chains.

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Effect of $Ar^+$ RF Plasma Treatment Conditions on Interfacial Adhesion Energy Between Cu and ALD $Al_2O_3$ Thin Films for Embedded PCB Applications ($Ar^+$ RF 플라즈마 처리조건이 임베디드 PCB내 전극 Cu박막과 ALD $Al_2O_3$ 박막 사이의 계면파괴에너지에 미치는 영향)

  • Park, Sung-Cheol;Lee, Jang-Hee;Lee, Jung-Won;Lee, In-Hyung;Lee, Seung-Eun;Song, Byoung-Ikg;Chung, Yul-Kyo;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.1
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    • pp.61-68
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    • 2007
  • Interfacial fracture energy(${\Gamma}$) between $Al_2O_3$ thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a $90^{\circ}$ peel test. While the interfacial fracture energy of $Cu/Al_2O_3$ is very poor, Cr adhesion layer increases the interfacial fracture energy to $39.8{\pm}3.2g/mm\;for\;Ar^+$ RF plasma power density of $0.123W/cm^2$, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.

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A Study on Surface Properties of Mechanical Interfacial Behavior of DGEBA/PMR-15 Blends (DGEBA/PMR-15 블렌드계의 표면특성 변화가 기계적 계면특성에 미지는 영향)

  • Park, Soo-Jin;Lee, Hwa-Young;Han, Mijeong;Hong, Sung-Kwon
    • Journal of Adhesion and Interface
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    • v.4 no.1
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    • pp.1-8
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    • 2003
  • In this work, the effect of PMR-15 content on the variation of surface free energy of the DGEBA/PMR-15 blend system was investigated in terms of contact angles and mechanical interfacial tests. Based on FT-IR result of the blend system. C=O (1,772, $1,778cm^{-1}$) and C-N ($1,372cm^{-1}$) peaks appeared with imidization of PMR-15 and -OH ($3,500cm^{-1}$) peak showed broadly at 10 phr of PMR-15 by ring-opening of epoxy. Contact angle measurements were performed by using deionized water and diiodomethane as testing liquids. As a result, the surface free energy of the blends gave a maximum value at 10 phr of PMR-15, due to the significant increasing of specific component. The mechanical interfacial properties measured from the critical stress intensity factor ($K_{IC}$) and the critical strain energy release rate ($G_{IC}$) showed a similar behavior with the results of surface energetics. This behavior was probably attributed to The improving of the interfacial adhesion between intermolecules, resulting from increasing the hydrogen bondings of the blends.

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광반응 폴리이미드위에 RF bias sputtering 방식으로 증착된 Cr의 접착력에 관한 연구

  • 김선영;김영호;윤종승
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.11a
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    • pp.171-177
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    • 2001
  • The adhesion enhancement from inserting a RF bias-sputtered Cr layer between Cu and polyimide (PI) has been studied. The RF bias power applied in this study was ranged from 0 to 400 W. Without the RF bias, the peel strength, which measures the adhesion strength, was nearly o g/mm. As the RF power was increased, the peel strength rose up to ~130 g/mm at 200 W, which remained constant with further increase of the RF bias power. Cross-sectional transmission electron microscopy(TEM) was used to investigate the interfacial reaction between the Cr film and PI substrate during the bias sputtering. The Cr/PI interface without the application of RF dais showed a clean, sharp interface while the RF raised Cr/PI interface had about 10~30 nm thick atomistically mixed interlayer between the metal film and PI substrate. This interlayer appeared to have resulted from the implantation of high energy adatoms during the RF bias sputtering of Cr film. This mixed layer serves as an interlocking layer, which enhances adhesion between the metal and PI layers.

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finite Element Modeling of a Hemispherical Asperity Adhesively Contacting the Plane Surface of Semi-Infinite Rigid Body (강체평면에 흉착접촉하는 반구헝돌기의 유한요소모델링)

  • Cho, Sung-San;Park, Seung-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.11
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    • pp.2436-2441
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    • 2002
  • Finite element technique considering adhesive forces is proposed and applied to analyze the behavior of elastic hemispherical asperity adhesively contacting the plane surface of semi -infinite rigid body. It is demonstrated that the finite element model simulates interfacial phenomena such as jump -to-contact and adhesion hysteresis that cannot be simulated with the currently available adhesive contact continuum models. This simulation aiso provides valuable information on contact pressure, contact region and stress distributions. This technique is anticipated to be utilized in designing a low-adhesion surface profile for MEMS/NEMS applications since various contact geometries can be analyzed with this technique.

Nanotribological Behavior of Cu Oxide and Silicon Tip (Cu Oxide와 Silicon Tip 사이의 나노트라이볼러지 작용)

  • Kim, Tae-Gon;Kim, In-Kwon;Park, Jin-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.364-365
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    • 2005
  • This paper report nanotribological behavior between Si tip and Cu wafer surfaces which was treated various concentration of $H_2O_2$. This experimental approach has proven atomic level insight into Cu CMP. It has been used to study interfacial friction and adhesion force between Si tip and Cu wafer surfaces in air by atomic force microscopy (AFM). Adhesion force of Cu surfaces which was pre-cleaned in diluted HF solution was lager than Cu oxide surfaces. Adhesion force of Cu oxide surface was saturated around 7 nN. Slope of normal force vs lateral signal was increased as increasing concentration of $H_2O_2$ and it was saturated around 24. Friction force of Cu oxide was lager than Cu.

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Strategy and progress to establish a micro-assembly technology archive considering the mechanisms of joining- and manipulating- processes

  • Takahashi, Kunio
    • Proceedings of the KWS Conference
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    • 2005.06a
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    • pp.367-369
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    • 2005
  • For the purpose of the optimization or the break through of production processes, it is essential to understand or theoretically interpret dominant mechanisms of the processes, and further more, archive them. and utilize them combining some of them which are needed. Especially in the technology for micro- or nano-scaled objects, adhesion phenomenon is no more negligible, because the adhesion force is proportional to the size of objects meanwhile gravity force is proportional to the third power of it. Author has been working about the mechanisms for micro-assembly processes, which include joining processes and manipulation processes. In the present paper, the strategy and the progress to establish the micro-assembly technology archive are introduced. Some of the mechanisms are introduced with related basic approaches to the adhesion phenomena. Also it will be expressed that our data base project for the surface and interfacial energies is strongly related to these basic approaches.

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Adhesion Strength Measurements of Cu-based Leadframe/EMC Interface

  • Lee, Ho-Young;Jin Yu
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.2
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    • pp.1-12
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    • 1999
  • Brown oxide and/or black oxide layers were formed on the surface of Cu-based leadframe by chemical oxidation of leadframe in hot alkaline solutions, and their growth characteristics were studied. Then, to measure the adhesion strength between leadframe and epoxy molding compound (EMC), oxidized leadframe samples were molded with EMC and machined to form sandwiched double-cantilever beam (SDCB) specimens and pull-out specimens, respectively. Results showed that the adhesion strength of un-oxidized leadframe/EMC interface was inherently very poor but could be increased drastically with the nucleation of acicular CuO precipitates on the surface of leadframe. The presence of smooth faceted $Cu_2O $ on the surfaces of leadframe gave close to zero interfacial fracture toughness (Gc) and reasonable pull strength (PS). A direct correlation between Gc and PS showed that PS can be a measure of Gc only in a limited range.

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Improvement in Interfacial Performances of Silicone Rubber by Oxygen Plasma Treatment

  • Lee, Ki-Taek;Seo, Yu-Jin;Huh, Chang-Su
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.232-233
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    • 2005
  • The Surface of semi-conductive silicone rubber was treated by oxygen plasma to improve adhesion and electric performance in joints between insulating and semi-conductive silicone materials. Surface characterizations were assessed using contact angle measurement and Fourier transform infrared spectroscope (FTIR). Adhesion level was understood from T-peel tests between plasma treated semi-conductive and insulating material. Electrical breakdown strength was measured to understand the charge of electrical performance. From the results, the oxygen plasma treatment produces a significant increase in function group of containing oxygen which can be mainly ascribed to the creation of carbonyl groups on the silicone surface from the strength were improved. Therefore it is concluded then plasma treatment leads to decrease voids originating form poor adhesive, and the improve the adhesion in silicone interface. So we could obtain higher electrical design level of silicone material used for electrical apparatus using oxygen plasma treatment.

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