• Journal of KIISE:Computing Practices and Letters
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• v.11 no.1
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• pp.26-35
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• 2005

Generally, we employ FSMs for the design of controllers in digital systems. FSMs are Implemented with state diagrams generated from control flow. With HDL, we design and verify FSMs based on state diagrams. As the number of states in the system increases, the verification or modification processes become complicated, error prone and time consuming. In this paper, we propose a control flow oriented hardware description language at the register transfer level called Cycle-C. Cycle-C describes FSMs with timing information and control How intensive algorithms. The Cycle-C description is automatically converted into FSMs in the form of synthesizable RTL VHDL. In experiments, we design FSMs for control intensive interface circuits. There is little area difference between Cycle-C design and manual design. In addition, Cycle-C design needs only 10~50% of the number lines of manual RTL VHDL designs.

• Archives of design research
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• v.14
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• pp.87-106
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• 1996

Recent rapid development of electronic technologies and semiconductors has made it possible to perform diverse intelligent functions even in simple products. This technological sophistication, in turn, made it difficult to get required information on the usage of products by just its shape. Under these new circumstances, User-interface design became more important. However existing studies were mainly done with the emphasis of software development and focusing on the evaluation-stage after development of alternatives. This study sets the objective for developing modeling technique which can be applied to product design and the stage of concept development. At first the role of modeling was discussed to understand the nature of modeling. Then the existing techniques of modeling were reviewed for identifying advantages and limits. The review of existing modeling techniques revealed general objectives which new modeling techniques should fulfill. Based on objectives new modeling techniques were proposed. Following this new techniques, actual case of modeling a existing product were demonstrated to evaluate the validity of new technique and show the actual application. Finally findings were summarized and the limits of the study were identified.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2000.11b
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• pp.318-324
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• 2000

Ultrasonic and magnetic resonance imaging systems are used to visualize the interior states of biological objects. These nondestructive methods have many advantages but too much expensive. And they do not give exact color information and may miss some details. If it is allowed to destruct some biological objects to get the interior and exterior information, constructing 3D image from the series of the sliced sectional images gives more useful information with relatively low cost. In this paper, PC based automatic 3D model generator was developed. The system was composed of three modules. One is the object handling and image acquisition module, which feeds and slices objects sequentially and maintains the paraffin cool to be in solid state and captures the sectional image consecutively. The second is the system control and interface module, which controls actuators for feeding, slicing, and image capturing. And the last is the image processing and visualization module, which processes a series of acquired sectional images and generates 3D graphic model. The handling module was composed of the gripper, which grasps and feeds the object and the cutting device, which cuts the object by moving cutting edge forward and backward. Sliced sectional images were acquired and saved in the form of bitmap file. The 3D model was generated to obtain the volumetric information using these 2D sectional image files after being segmented from the background paraffin. Once 3-D model was constructed on the computer, user could manipulate it with various transformation methods such as translation, rotation, scaling including arbitrary sectional view.

• Journal of Korean Society on Water Environment
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• v.23 no.6
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• pp.951-960
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• 2007

Window interface to Hydrological Simulation Program-FORTRAN (WinHSPF) developed by the United States Environmental Protection Agency (EPA) was applied to the upstream of Nam-Han river watershed to examine its applicability for loading estimates in watershed scale and to evaluate non-point source control scenarios using BMPRAC in WinHSPF. The WinHSPF model was calibrated and verified for water flow using Ministry of Construction and Transportation (MOCT, 3 stations, 2003~2005) and water qualities using Ministry of Environment (MOE, 5 station, 2000~2006). Water flow and water quality simulation results were also satisfactory over the total simulation period. But outliers were occurred in the time series data of TN and TP at some regions and periods. Therefore, it required more profit calibration process for more various parameters. As a result, all the study was performed within the expectation considering the complexity of the watershed, pollutant sources and land uses intermixed in the watershed. The estimated pollutant load for annual average about $BOD_5$, T-N and T-P respectively. Nonpoint source loading had a great portion of total pollutant loading, about 86.5~95.2%. In WinHSPF, BMPRAC was applied to evaluate non-point source control scenarios (constructed wetland, wet detention ponds and infiltration basins). All the scenarios showed efficiency of non-point source removal. Overall, the HSPF model is adequate for simulating watersheds characteristics, and its application is recommended for watershed management and evaluation of best management practices.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• Restorative Dentistry and Endodontics
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• v.22 no.1
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• pp.470-478
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• 1997

The purpose of this study was to investigate the effects of moistening mechods of dentin on the morphologic states of hybrid layers and on the interfacial bond strength between dentin and composite. Specimens were divided into 6 groups based on the surface moistening methods and materials used. After the dentin surface was conditioned with 10 % phoporic acid and irrigated: 1. The dentin surface was dried. Then bonding agent and composite were applied. 2. The dentin surface was blot-dryed. Then primer, bonding atent and composite were applied. 3. The dentin surface was dryed first. Within 20 seconds, the surface was rewetted, then primer, bonding agent and composite were applied. 4. The dentin surface was dryed. Then primer, bonding agnent and composite were applied. 5. The dentin surface was dryed first. Atter 24hrs, the surface was rewetted, and then primer, bonding agent and composite were applied. 6. The surface was conditioned with NaOCl for 5min. Then primer, bonding agent and composite were applied. To reveal the hybrid layer, scanning electron microscopy was used after the samples were ion beam etched. The shear bond strength of each group was tom pared by ANOVA. In groups 2, 3 and 4, the hybrid layer was clearly visible, but the width was more limited in group 4. In group 1 and 5, the hybrid layer was not found, and a gap was formed between dentin and composite. In group 6, the hybrid layer was not found, but the interface between the dentin and composite was intimate. The shear bond strength of each group was as follows: Group 1 : 4MPa, Group 2 : 14MPa, Group 3 : 12MPa, Group 4 : 14MPa, Group 5 : 5MPa, Group 6 : 9MPa.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.93-93
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• 2003

Photoluminescence(PL) properties of Silicon nanocrystals (nc-Si) as a function of temperature is reported to consider the mechanism of PL. Nc-Si has been made by $Si^+$ ion-implantation into thermal $SiO_2$ and subsequent annealing. And after gold had been diffused at the same samples above, the resultant PL spectra has been compared to the PL spectra from the non-gold doped nc-Si. PL peak energy variation from nc-Si is same with the variation of energy bandgap of bulk silicon as temperature changes from 6 K to room temperature. This result may mean nc-Si is still indirect transition material like bulk silicon. Gold doped nc-Si reveals short peak wavelength of PL spectrum than gold undoped one. PL peak shift through gold doing process shows clearly the PL mechanism is not from defect or interface states. PL intensity increases from 6K to a certain temperature and then decrease to room temperature. This characteristic with temperature shows that phonon have a role for the luminescence as theory explains that electron and hole can be recombined radiatively by phonon's assist in nc-Si, which is almost impossible in bulk silicon. Therefore luminescence is observed in nc-Si constructed less than a few of unit cell and the peak energy of luminescence can be higher than the bulk bandgap energy by the bandgap widening effect occurs in nanostructure.

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.262-267
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• 2006

We proposed a PPLN fabrication setup that measures the voltage and current applied to $LiNbO_3$ in real time during application of a DC electric field. Because the duration for transferring a sufficient electron charge to $LiNbO_3$ increases, we are able to control the electron charge flow transferred to $LiNbO_3$ efficiently. We divided the domain inversion process of PPLN into 5 states: Nucleation (state 1), Spread of the domain inversion region under the electrode(state 2), Accumulation of the electron charge at the insulator/$LiNbO_3$ interface(state 3), Domain inversion under the insulator layer after breakdown(state 4), and Lowering the electric field applied to $LiNbO_3$ (state 5). We have found that the Threshold Point is essential for the domain inversion and that the domain inversion process must be stopped within state 3 for the optimum PPLN. Using these results, we could fabricate a stable and reproducible PPLN efficiently.

• The KIPS Transactions:PartA
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• v.11A no.2
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• pp.189-194
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• 2004

This paper describes method to distribute much high-dimensional facial expression motion data to 2 dimensional space, and method to create facial expression animation by select expressions that want by realtime as animator navigates this space. In this paper composed expression space using about 2400 facial expression frames. The creation of facial space is ended by decision of shortest distance between any two expressions. The expression space as manifold space expresses approximately distance between two points as following. After define expression state vector that express state of each expression using distance matrix which represent distance between any markers, if two expression adjoin, regard this as approximate about shortest distance between two expressions. So, if adjacency distance is decided between adjacency expressions, connect these adjacency distances and yield shortest distance between any two expression states, use Floyd algorithm for this. To materialize expression space that is high-dimensional space, project on 2 dimensions using Sammon's Mapping. Facial animation create by realtime with animators navigating 2 dimensional space using user interface.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.10
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.