• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.90-93
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• 1992

In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an $N_2O$ ambient have been studied. Compared with the oxides grown in $O_2$, $N_2O$ oxides show significantly improved breakdown field and low flat band voltage. Also, $N_2O$ oxide is more controllable for ultrathin film growth than $O_2$ oxide. This improvement is caused by nitrogen incorporation into the $N_2O$ oxide. Therefore, the nitrogen-rich-layer at the Si/$SiO_2$ interface formed during $N_2O$ oxidation not only strengthen $N_2O$ oxide structure at the interface and improves the gate dielectric quality, it also acts as a oxidant diffusion barrier that reduces the oxidation rate significantly.

• 대한금속재료학회지
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• 제48권8호
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• pp.749-756
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• 2010

Low carbon steels were oxidized isothermally at 1050 and $1180^{\circ}C$ for 4 hr in air in order to determine the effect of alloying elements Si, S, Cu, Sn, and Ni on oxidation. For oxidation resistance of low carbon steels, the beneficial elements were Si, Cu, and Ni, whereas the harmful elements were S and Sn. The most active alloying element, Si, was scattered inside the oxide scale, at the scale-alloy interface, and as an internal oxide precipitate. The relatively noble elements such as Cu and Ni tended to weakly segregate at the scale-alloy interface. Sulfur and Sn were weakly, uniformly distributed inside the oxide scale. Excessively thick, non-adherent scales containing interconnected pores formed at $1180^{\circ}C$.

• 전기전자학회논문지
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• 제18권4호
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• pp.447-455
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• 2014

본 연구에서는 4H-SiC MOSFET의 주요 문제점인 $SiC/SiO_2$ 계면의 특성을 향상시키기 위해 PECVD (plasma enhanced chemical vapor deposition) 공정을 이용하여 n-based 4H-SiC MOS Capacitor를 제작하였다. 건식 산화 공정의 낮은 성장속도, 높은 계면포획 밀도와 $SiO_2$의 낮은 항복전계 등의 문제를 극복하기 위하여 PECVD와 NO어닐링 공정을 사용하여 MOS Capacitor를 제작하였다. 제작이 끝난 후, MOS Capacitor의 계면특성을 hi-lo C-V 측정, I-V 측정 및 SIMS를 이용해 측정하고 평가하였다. 계면의 특성을 건식 산화의 경우와 비교한 결과 20% 감소한 평탄대 전압 변화, 25% 감소한 $SiO_2$ 유효 전하 밀도, 8MV/cm의 증가한 $SiO_2$ 항복전계 및 1.57eV의 유효 에너지 장벽 높이, 전도대 아래로 0.375~0.495eV만큼 떨어져 있는 에너지 영역에서 69.05% 감소한 계면 포획 농도를 확인함으로써 향상된 계면 및 산화막 특성을 얻을 수 있었다.

• Carbon letters
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• 제3권3호
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• pp.127-132
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• 2002

Unidirectional polymer composites were prepared using high-strength carbon fibers as reinforcement and phenolic resin as matrix precursor with keeping fiber volume fraction at 30, 40, 50 and 60% respectively. These composites were carbonized at $1000^{\circ}C$ and graphitised at $2600^{\circ}C$ in the inert atmosphere. The carbonized and graphitised composites were characterized for mechanical properties as well as microstructure. Microscopic studies were carried out of the polished surface of carbonized and graphitised composites after etching by chromic acid, to understand the effect of fiber volume fraction on oxidation at fiber-matrix interface. It is found that the flexural strength in polymer composites increases with fiber volume fraction and so does for the carbonised composites. However, the trend was found to be reversed in graphitised composites. In all the carbonized composites anisotropic region has been observed at fiber-matrix interface which transforms into columnar type microstructure upon graphitisation. The extension of strong and weak columnar type microstructure is function of fiber volume fraction. SEM microscopy of the etched surface of the sample reveal that composites containing 40% fiber volume has minimum oxidation at the interface, revealing a strong interfacial bonding.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.208-209
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• 2011

In this work, we developed self-assembled monolayers (SAMs) of alkanethiols on gold that can release amine groups, when an electrical potential was applied to the gold. The strategy was based on the introduction of the electroactive carbamate group, which underwent the two-electron oxidation with simultaneous release of the amine molecules, to alkanethiols. The synthesis of the designed thiol compounds was achieved by coupling isocyanate-containing compound with hydroquinone. The electroactive thiols were mixed with hydroxyl-containing alkanethiol [$HS(CH_2)_{11}OH$] to form mixed monolayers, and cyclic votammetry was used for the characterization of the release. The mixed SAMs showed a first oxidation peak at +540 mV (versus Ag/AgCl reference electrode), demonstrating irreversible conversion from carbamate to hydroqinone with simultaneous release of the amine groups. The second and third cycles showed typical reversible redox reaction of hydroquinone and quione: the oxidation and reduction occurred at +290 mV and -110 mV, respectively. The measurement of ToF-SIMS further indicates that electrochemical-assisted chemical reaction successfully released amine groups. This new SAM-based electrochemistry would be applicable for direct release of biologically active molecules that contain amine groups.

• 한국표면공학회지
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• 제34권5호
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• pp.494-498
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• 2001

Ferromagnets(FM)-Al-$O_{x}$ -Ferromagnets (FM) tunneling junctions were evaluated by changing the fabricating conditions of an Al-X$/_{x}$ layer. The junction composed of a thicker Al-$O_{x}$ shows the low resistance and the stable MR ratio about 16% in a wide range of oxidation time. For the junctions with the thinner Al-$O_{x}$ , they showed a fast increase of the barrier width as an increase of an oxidation time and exhibited a strong bias dependence. As oxidation time increased, the coercivity ($H_{c}$ ) of bottom Co layer increased gradually due to the local oxidation of Co bottom layer at a interface. However, the small formation of Co oxide did not largely influence on the deterioration of MR ratio.

• 전자공학회논문지A
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• 제33A권6호
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• pp.151-157
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• 1996

We propose a mechanism for the formation of pinholes in the Si-buffer layer, through the observations with varying the process- and structure variables in the SEPOX (selective poly-oxidation) process, an isolation method for sub-u DRAMs. Pinholes are formed through the accumulation of Si vacancies generated by the oxidation of Si, in which Si atoms leave the sites (vacancies) at the Si/SiO$_{2}$ interfaces and diffuse into the oxide to be oxidized near interface. In the course of the accumulation of Si-vacancies, the stress induced in the Si-buffer layer affects the migration of vacancies to result in the final size and distribution of pinholes. This paper may be, to our knowledge, the first report about the oxidation-induced pinhole in the Si/SiO$_{2}$ system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.360-360
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• 2010

Very initial stage of oxidation process of Si (001) surface was investigated using large scale molecular dynamics simulation. Reactive force field potential was used for the simulation owing to its ability to handle charge variation associated with the oxidation reaction. To know the detail mechanism of both adsorption and desorption of water molecule (for simulating wet oxidation), oxygen molecule (for dry oxidation) and their atom constituents, interaction of one molecule with Si surface was carefully observed. The simulation is then continued with many water and oxygen molecules to understand the kinetics of oxide growth. The results show that possibilities of desorption and adsorption depend strongly on initial atomic configuration as well as temperature. We observed a tendency that H atoms come relatively into deeper surface or otherwise quickly desorbed away from the silicon surface. On the other hand, most oxygen atoms are bonded with first layer of silicon surface. We also noticed that charge transfer is only occur in nearest neighbor regime which has been pointed out by DFT calculation. Atomic structure of the interface between the oxide and Si substrate was characterized in atomic scale.

• 한국재료학회지
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• 제21권2호
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• pp.120-124
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• 2011

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

• 연구논문집
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• 통권29호
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• pp.141-149
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• 1999

Brazing of Fe-Cr-Al alloy was carried out at $1200^{\circ}C$ in vacuum furnace using nickel-based filler metals : BNi-5 powder(Ni-Cr-Si-Fe base alloy} and MBF-50 foil (Ni-Cr-Si-B). The effect of boron content on the stability of oxide scale on the brazed joint was investigated by means of cyclic oxidation test performed at $1050^{\circ}C$ and $1200^{\circ}C$. Apparently, the joints brazed with MBF-50 containing boron showed relatively stable oxidation rates compared to boron-free BNi-5 at both temperatures. However, it was considered that the slower weight loss of MBF-50 brazed specimen wasn’t resulted from the low oxidation rate but from the spallation of oxide layer. The oxide layer consisted of thick spinel oxide on the surface and $Al_2 O_3$ internal oxide layer along the interface between mother alloy and braze, the mother alloy was also eroded seriously by the formation of spinel oxides such as $FeCr_2 O_4$ and $NiCr_2 O_4$ on the surface, likely to be induced by the change of oxide forming mechanism due to diffusion of boron from the braze. On the contrary, the joint brazed with BNi-5 showed the good oxidation resistance during the cyclic oxidation test. It seems that the oxidation can be retarded by the formation of stable $Al_2 O_3$ layer at the surface.