• Journal of the Korean Society for Precision Engineering
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• v.15 no.8
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• pp.156-164
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• 1998

IMS is a more advanced manufacturing system than FMS. However, IMS do not have sufficient performance for the work in the various and uncertain environment, because of the difficulty of the work and occurrence of the unexpected condition. If IMS is hard to work properly, teleoperation system can support it by using the human's consideration and judgment. The master mechanism is a basic component of the teleoperation system and the development of the useful one is important for efficiency of the work. A master mechanism of exoskeleton type can increase the work efficiency, mobility and harmony between a working robot and an operator. This paper describes an arm-harness of exoskeleton type, which is able to drive a robot according to judgment. This device is applied to a robot system for evaluating the system performance through the experiment.

• Journal of Korea Society of Digital Industry and Information Management
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• v.14 no.3
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• pp.21-28
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• 2018

As computer performance and needs of user convenience increase, computer user interface are also changing. This changes had great effects on software development environment. In past, text editors like vi or emacs on UNIX OS were the main development environment. These editors are very strong to edit source code, but difficult and not intuitive compared to GUI(Graphical User Interface) based environment and were used by only some experts. Moreover, the trends of software development environment was changed from command line to GUI environment and GUI Editor provides usability and efficiency. As a result, the usage of text based editor had decreased. However, because GUI based editor use a lot of computer resources, computer performance and efficiency are decreasing. The more contents are, the more time to verify and display the contents it takes. In this paper, we provide a new parser that provide multi view editing, incremental parsing and multiple entry of abstract syntax tree.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.47-51
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• 2008

Computer and communication of based IT technology use to das that remote control, monitoring, measuring automation gas switch, recloser totaled far about $20{\sim}30km$. For increasing efficiency billing, metering of high voltage customer use to amr system. If between das and amr interface operate when generated fault in high voltage electric equipment of customer part, amr system serve to das quickly in fault information data, correct fault location.

• Proceedings of the KSR Conference
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• 2009.05a
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• pp.476-482
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• 2009

A signal equipment improvement project for the existing facility ATS to ATP is under construction in Kyung-Bu and Ho-Nam commercial line including 400 rolling stocks. But there was a concern for the interface between KTX OBCS and ATP from the beginning of the project. At present, this is the front burner event. This paper introduces interface checking and predicted failure point between KTX OBCS and ATP improvement system. Through this measure the optimal installation of the ATP will be possible. The study was made under maintenance efficiency including reliability because the KTX signal equipment must qualify the above condition.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.59.2-59.2
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• 2012

Polymer solar cells utilize bulk heterojunction (BHJ) type photo-active layer in which the electron donating polymer and electron accepting $C_{60}$ derivatives are blended. We found there is significant charge recombination at the interface between the BHJ active layer and electrode. The charge recombination at the interface was effectively reduced by inserting wide band gap inorganic interfacial layer, which resulted in efficiency and stability enhancement of BHJ polymer solar cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.224-224
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• 2016

Many researchers have been tried to improve the performance of the phosphorescent organic light-emitting diode(PHOLED) by controlling of the dopant profile in the emission layer. In this work, as shown in Fig. 1 insert, a typical red PHOLED device which has the structure of ITO/NPB(50nm)/CBP(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) is fabricated with a 5nm thick doping section in the emission layer. The doping section is formed by co-deposition of CBP and Ir(btp)2acac with a doping concentration of 8%, and it's location(x) is changed from HTL/EML interface to EML/HBL in 5nm steps. The current efficiency versus current density of the devices are shown in Fig. 1. By changing the location of doping section, as shown in Fig. 1 and 2, at x=5nm, the efficiency shows the maximum of 3.1 cd/A at 0.5 mA/cm2 and it is slightly decreased when the section is closed to HTL and slightly increased when the section is closed to HBL. If the doping section is closed to HTL(NPB) the excitons can be quenched easily to NPB's triplet state energy level(2.5eV) which is relatively lower than that of CBP(2.6eV). Because there is a hole accumulation at EML/HBL interface the efficiency can be increased slightly when the section is closed to HBL. Even the thickness of the doping section is only 5nm,. the maximum efficiency of 3.1 cd/A with x=5 is closed to that of the homogeneously doped device, 3.3 cd/A, because the diffusion length of the excitons is relatively long. As a result, we confirm that the current efficiency of the PHOLED can be improved by the doping profile optimization such as partially, not homogeneously, doped EML structure.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.275-286
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• 2005

The performance of the InGaN LED's in terms of the photon extraction efficiency has been analyzed by the Monte Carlo photon simulation method. Simulation results show that the sidewall slanting scheme, which works well for the AlInGaP or InGaN/SiC LED, plays a very minimal role in InGaN/sapphire LED's. In contrast to InGaN/SiC LED's, the lower refractive index sapphire substrate restricts the generated photons to enter the substrate, minimizing the chances for the photons to be deflected by the slanted sidewalls of the epitaxial semiconductor layers that are usually very thin. The limited photon transmission to the sapphire substrate also degrades the. photon extraction efficiency especially in the epitaxial-side down mount. One approach to exploit the photon extraction potential of the epitaxial-side down mount may be to texture the substrate-epitaxy interface. In this case, randomized photon deflection off the textured interface directly increases the number of the photons entering the sapphire substrate, from which they easily couple out of the chip and thereby improving the photon extraction efficiency drastically.

• Journal of Information Technology Services
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• v.14 no.3
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• pp.183-196
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• 2015

The concept of energy-efficient networking has begun to spread in the past few years, gaining increasing popularity. A common opinion among networking researchers is that the sole introduction of low consumption silicon technologies may not be enough to effectively curb energy requirements. Thus, for disruptively boosting the network energy efficiency, these hardware enhancements must be integrated with ad-hoc mechanisms that explicitly manage energy saving, by exploiting network-specific features. The IEEE 802.3az Energy Efficient Ethernet (EEE) standard is one of such efforts. EEE introduces a low power mode for the most common Ethernet physical layer standards and is expected to provide large energy savings. However, it has been shown that EEE may not achieve good energy efficiency because mode transition overheads can be significant, leading to almost full energy consumption even at low utilization levels. Coalescing techniques such as packet coalescing and interrupt coalescing were proposed to improve energy efficiency of EEE, but their implementations typically adopt a simple policy that employs a few fixed values for coalescing parameters, thus it is difficult to achieve optimal energy efficiency. The paper proposes adaptive interrupt coalescing (AIC) that adopts an optimal policy that could not only improve energy efficiency but support performance. AIC has been implemented at the sender side with the Intel 82579 network interface card (NIC) and e1000e Linux device driver. The experiments were performed at 100 M bps transfer rate and show that energy efficiency of AIC is improved in most cases despite performance consideration and in the best case can be improved up to 37% compared to that of conventional interrupt coalescing techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.432.1-432.1
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• 2016

We demonstrated that the power conversion efficiency (PCE) of bilayer solar cell was significantly enhanced by inserting interfacial layer between the organic bilayer film and the Al electrode. Moreover, the water contact angle shows that the bilayer solar cells suffer from the undesirable surface component which limits the charge transport to the Al electrode. The AFM measurement has revealed that the pre- and post-thermal annealing treatments results in different morphologies of the interfacial layer which is critical for the higher PCE of the bilayer solar cells. Furthermore we have investigated the electrical properties of the bilayer solar cells and obtained insights into the detailed device mechanisms. The transient photovoltage measurements suggests that the significantly enhanced Voc is caused by reducing the recombination at the interface between the organic films and the Al electrode. By inserting the TiO2 layer between the bilayer film and Al electrode, the open circuit voltage (Voc) was increased from 0.37 to 0.66V. Consequently, the power conversion efficiency (PCE) of bilayer solar cells was significantly enhanced from 1.23% to 3.71%. As the results, the TiO2 interfacial layer can be used to form an ohmic contact layer, serveing as a blocking layer to prevent the penetration of the Al, and to reduce the recombination at the interface.