• Title/Summary/Keyword: interface damage

검색결과 349건 처리시간 0.03초

휠체어 추진속도 및 등받이 경사각도에 따른 둔부 압력 변화 특성 (Characteristics of the Buttock Interface Pressure According to Wheelchair Propulsion Speed and Various Back Reclined Seating Position)

  • 권혁철;공진용
    • 한국전문물리치료학회지
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    • 제12권2호
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    • pp.1-10
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    • 2005
  • Pressure ulcers are serious complications of tissue damage that can develop in patients with diminished pain sensation and diminished mobility. Pressure ulcers can result in irreversible tissue damage caused by ischemia resulting from external loading. There are many intrinsic and extrinsic contributors to the problem, including interface tissue pressure, shear, temperature, moisture, hygiene, nutrition, tissue tolerance, sensory and motor dysfunction, disease and infection, posture, and body support systems. The purposes of this study were to investigate the relationship between buttock interface pressure and seating position, wheelchair propulsion speed. Seated-interface pressure was measured using the Force Sensing Array pressure mapping system. Twenty subjects propelled wheelchair handrim on a motor-driven treadmill at different velocities (40, 60, 80 m/min) and seating position used recline ($100^{\circ}$, $110^{\circ}$, $120^{\circ}$) with a wheelchair simulator. Interface pressure consists of average (mean of the pressure sensor values) and maximum pressure (highest individual sensor value). The results of this study were as follows; No significant correlation in maximum/average pressure was found between a static position and a 40 m/min wheelchair propulsion (p>.05). However, a significant increase in maximum/average pressure were identified between conditions of a static position and 60 m/min, and 80 m/min wheelchair propulsion (p<.05). No significant correlation in maximum pressure were found between a $90^{\circ}$ recline (neutral position) and a $100^{\circ}$, $110^{\circ}$, or $120^{\circ}$ recline of the wheelchair back (p>.05). No significant difference in average pressure was found between conditions of a $90^{\circ}$ recline and both a $100^{\circ}$ and $110^{\circ}$ recline of wheelchair back. However, a significant reduction in average pressure was identified between conditions of a $90^{\circ}$ and $120^{\circ}$ recline of wheelchair back (p<.05). This study has shown some interesting results that reclining the seat by $120^{\circ}$ reduced average interface pressure, including the reduction or prevention in edema. And interface pressure was greater during dynamic wheelchair propulsion compared with static seating. Therefore, the optimal seating position and seating system ought to provide postural control and pressure relief. We need an education on optimal seating position and a suitable propulsion speeds for wheelchair users.

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탐침형 정보저장 기술을 위한 실리콘 탐침의 나노 마멸 특성에 관한 연구 (Nano-wear Characteristics of Silicon Probe Tip for Probe Based Data Storage Technology)

  • 이용하;정구현;김대은;유진규;홍승범
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2004년도 추계학술대회 논문집
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    • pp.552-555
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    • 2004
  • The reliability issue of the probe tip/recording media interface is one of the most crucial concerns in the Atomic Force Microscope (AFM)-based recording technology. In this work, the tribological characteristics of the probe/media interface were investigated by performing wear tests using an AFM. The ranges of applied normal load and sliding velocity for the wear test were 10 to 50nN and 2 to 20$\mu$m/s respectively. The damage of the probe tip was quantitatively as well as qualitatively characterized by Field Emission Scanning Probe Microscope (FESEM) analysis and calculated based on Archard s wear equation. It was shown that the wear coefficient of the probe tip was in the order of 10$^{-4}$ ~ 10$^{-3}$ , and significant contamination at the end of the probe tip was observed. Thus in order to implement the AFM-based recording technology, tribological optimization of the probe/media interface must be achieved.

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FE ANALYSIS OF INTERFACIAL BEHAVIOR OF COLD FORGING TOOL COATED BY HARD FILM

  • HAYAKAWA Kunio
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2003년도 The 8th Asian Symposium on Precision Forging ASPF
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    • pp.18-21
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    • 2003
  • A behavior of interface of cold forging tool coated by hard film is analyzed by FEM. The indentation of a hemispherical tool of SUJ2 in JIS coated by electroplated coating of chromium into a cylindrical workpiece of S25C in JIS is performed. The proposed constitutive equations are implemented by the non-linear springs model at the interface. Calculated results show that the maximum interfacial normal displacement is observed at an immediately forward from the lip of the indentation, whereas maximum interfacial tangential displacement is at the immediately backward of the lip of the indentation.

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Fabrication of interface-controlled Josephson Junctions by Ion beam damage

  • 김상협;김준호;성건용
    • Progress in Superconductivity
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    • 제3권2호
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    • pp.168-171
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    • 2002
  • We have demonstrated ramp-edge Josephson junctions using high temperature superconductors without depositing artificial barriers. We fabricated a surface barrier formed naturally during an ion beam etching process and the annealing under the oxygen atmosphere. The experimental results imply that the barrier natures such as the resistivity are varied by the annealing conditions and the ion milling conditions including the beam voltages. Thus, the ann eating and etching conditions should be optimized to obtain excellent junction properties. In optimizing the fabricating factors, the interface-controlled junctions showed resistively shunted junctions like current-voltage characteristics and an excellent uniformity. These junctions exhibited a spread ($1\sigma$) of $I_{c}$ is 10% fur chips containing 7 junctions at 50K.K.

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대기압 저감에 따른 헤드/디스크 인터페이스의 트라이볼로지 특성 분석 (Effect of Reduced Ambient Pressure on the Tribological Behavior of Head/Disk Interface)

  • 한동국;박준우;김대은
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 1999년도 제30회 추계학술대회
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    • pp.303-309
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    • 1999
  • Optimum tribological performance of the head/disk system is critical in maintaining reliable data processing in a hard disk drive. Particularly, as the flying height of the slider continues to decrease with increasing recording density, frictional interaction between the slider and the disk need to be better understood. In this work the effect of reduced ambient pressure on the tribological behavior of the head/disk interface is presented. It is found that surface damage of the components can be accelerated by reducing the ambient pressure. This method may be utilized to assess slider/disk compatibility of newly developed systems in short time.

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근 접촉 영역에서 부상중인 슬라이더의 Touch-Down특성의 실험적 해석 (Experimental investigation of TD characteristics of a flying head slider in the near-contact region)

  • 이용은;이상직;임건엽;박경수
    • 정보저장시스템학회논문집
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    • 제7권2호
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    • pp.65-69
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    • 2011
  • Head Disk Interface (HDI) in a Hard Disk Drive (HDD) has decreased to achieve high areal density. Thus, the contact between a slider and a disk becomes more important. The contact between the slider and the disk can cause severe wear and damage of both the slider and the disk. Especially, Touch Down (TD) that the contact occurs continuously and repeatedly is extremely dangerous. Therefore, it is necessary to analyze the unstable bouncing vibration of the slider in head-disk interface. In this paper, we investigate the characteristic and causes of the Touch Down.

플라즈마 에칭으로 손상된 4H-실리콘 카바이드 기판위에 제작된 MOS 커패시터의 전기적 특성 (Electrical Characterization of MOS (metal-oxide-semiconductor) Capacitors on Plasma Etch-damaged 4H-Silicon Carbide)

  • 조남규;구상모;우용득;이상권
    • 한국전기전자재료학회논문지
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    • 제17권4호
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    • pp.373-377
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    • 2004
  • We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

효율적인 빌딩 관제를 위한 표준설비 인터페이스 설계 (Design of Standard Facility Interface for Efficient Building Control)

  • Moon, Sang-Ho
    • 한국정보통신학회논문지
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    • 제25권2호
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    • pp.334-337
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    • 2021
  • Recently, the necessity of rapid response to social problems such as disasters and quarantine arising from the complex and diverse social structures has emerged. As the number of large buildings increases, large-scale human damage is expected in the event of a disaster such as fire. To solve this problem, efficient control must be achieved through interfacing with various equipment and facilities installed inside the building. In this paper, we intend to study the interface method for various facilities in the building for efficient control. In detail, the facility standard model is defined by examining the status and specification of building. In addition, we intend to design and propose a standard facility communication data frame to support the protocol applicable to this model.

초음파를 이용한 금속기지 복합재료의 열충격 손상 평가 (Evaluation of Thermal Shock Damage of Metal Matrix Composite Using Ultasonics)

  • 강문필;이민래;이준현
    • 대한기계학회논문집A
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    • 제29권11호
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    • pp.1480-1487
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    • 2005
  • Metal matrix composites(MMCs) have been rapidly becoming one of the strongest candidates for structural materials fur many high temperature application. However, among the various high temperature environments in which metal matrix composites was applied, thermal shock is known to cause significant degradation in most MMC system. Due to the appreciable difference in coefficient of thermal expansion(CTE) between reinforcement and metal matrix, internal stresses are generated following temperature changes. Infernal stresses affect degradation of mechanical properties of MMC by causing microscopic damage in interface and matrix during thermal cycling. Therefore, the nondestructive evaluation on thermal shock damage behavior of SiC/A16061 composite has been carried out using ultrasonics. For this study, SiC fiber reinforced metal matrix composite specimens fabricated by a squeeze casting technique were thermally cycled in the temperature range 298$\~$673 K up to 1000cyc1es. Three point bending test was conducted to investigate the efffct of thermal shock damage on mechanical properties. The relationship between thermal shock damage behavior and the propagation characteristics of surface wave and SH-ultrasonic wave was discussed by considering the result of SEM observation of fracture surface.

$Si^+$ 이온주입된 Si 기판의 결함형성 및 회복에 관한 연구 (Characteristics of $Si^+$ self implant Induced Damage and Its Annealing Behavior)

  • 김광일;이상환;정욱진;정호배;권영규;김범만
    • 전자공학회논문지A
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    • 제31A권8호
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    • pp.91-99
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    • 1994
  • Damage induced by Si ion implantation and its annealing behavior during rapid thermal annealing were investigated by cross-sectional TEM (transmission electron microscopy) and RB ( Rutherford backscattering) spectrum. 150keV and 50keV Si ions were implanted in Si (100) at room temperature with doses of 2${\times}10^{15}cm^{-2}$. And 100keV Si ions were implanted in Si with doses from 1${\times}10^{14}cm^{-2}$. A variety of damage structures were generated by Si ion implantation such as continuous amorphous layer extending to the surface buried amorphous layer and damage clusters. Damage clusters are annealed out at the lower annealing temperature of 550 $^{\circ}C$. However, event at the temperature of 110$0^{\circ}C$ end of range loops remain in the original lower amorphous/crystal interface in the case of continuous and buried amorphous layer formation. Extended defects in the shape of zipper dislocations are also observed at the middle of the recrystallized region in the buried amorphous layer.

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