• Proceedings of the Safety Management and Science Conference
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• 2004.05a
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• pp.247-257
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• 2004

Electrodes were fabricated based on activated carbon powder BP-20, conducting agent such as Super P, vapor grown carbon fiber (VGCF) and acetylene black (AB), and the mixed binders of flexible poly(vinylidenefluoridehexafluoropropylene) [P(VdF-co-HFP)] and cross linking dispersion agent of polyvinylpyrrolidone (PVP) to increase mechanical strength. According to impedance measurement of the electrode with the addition of conducting agent, we found that it was possible to charge rapidly by the fast steady-state current convergence due to low equivalent series resistance (AC-ESR, fast charge transfer rate at interface between electrode and electrolyte and low RC time constant. The self-discharge of unit cell showed that diffusion process was controlled by the ion concentration difference of initial electrolyte due to the characteristics of Electric Double Layer Capacitor (EDLC) charged by ion adsorption in the beginning, but this by current leakage through the double-layer at the electrode/electrolyte interface had a minor effect and voltages of curves were remained constant regardless of electrode material. We found that the 2.3V/230F grade EDLC would be applied to industrial safety usage such as uninterrupted power supply (UPS) because of the constant DC-ESR by IR drop regardless of discharge current.

• Interaction and multiscale mechanics
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• v.1 no.2
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• pp.251-278
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• 2008

In this study, we investigate the discontinuous-derivative treatment at the gas-liquid interface in underwater explosion (UNDEX) problems by using the Moving Least Squares-Smoothed Particle Hydrodynamics (MLS-SPH) method, which is known as one of the particle methods suitable for problems where large deformation and inhomogeneity occur in the whole domain. Because the numerical oscillation of pressure arises from derivative discontinuity in the UNDEX analysis using the standard SPH method, the MLS shape function with Discontinuous-derivative Basis Function (DBF) that is able to represent the derivative discontinuity of field function is utilized in the MLS-SPH formulation in order to suppress the nonphysical pressure oscillation. The effectiveness of the MLS-SPH with DBF is demonstrated in comparison with the standard SPH and conventional MLS-SPH though a shock tube problem and benchmark standard problems of UNDEX of a trinitrotoluene (TNT) charge.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.411-414
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• 1999

70 ${\AA}$-thick oxides nitridied at various conditions were reoxidized at pemperatures of 900$^{\circ}C$ in dry-O$_2$ ambients for 5～40 mininutes. The gate oxide interface porperties as well as the oxide substrate interface properties of MOS(Metal Oxide Semiconductor) capacitors with various nitridation conditions, reoxidation conditions and pure oxidation condition were investigated. We stuided I$\sub$g/-V$\sub$g/ characteristics, $\Delta$V$\sub$g/ shift under constant current stress from electrical characteristics point of view and breakdown voltage from leakage current point of view of MOS capacitors with SiO$_2$, NO, RNO dielectrics. Overall, our experimental results show that reoxidized nitrided oxides show inproved charge trapping porperites, I$\sub$g/-V$\sub$g/ characteristics and gate $\Delta$V$\sub$g/ shift. It has also been shown that reoxidized nitridied oxide's leakage currented voltage is better than pure oxide's or nitrided oxide's from leakage current(1${\mu}$A) point of view.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.2
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• pp.53-63
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• 1993

Device degradations by the Fowler-Nordheim tunneling have been studide. The changes of device characteristics such as the threshold voltage, subthreshold slope, I-.or. curves have been measured after bidirectionally stressing n-channel MOSFET's and p-channel MOSFET's. Also the interface states have been directly measured by the charge pumping methodIt is shown that the change of interface states is determined by the number of hole carriers tunneling the gate oxide and electrons which are trapped in the gate oxide. Also, in this paper, we propose a model for device lifetime limited by the increase of interface states.

• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.356-360
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• 2015

The specific role of current collectors was investigated at the electrolyte/electrode interface of solid oxide fuel cells (SOFCs). Ag grids were fabricated as current collectors using electrohydrodynamic (EHD) jet printing for precise control of the grid geometry. The Ag grids reduced both the ohmic and polarization resistances as the pitch of the Ag grids decreased from $400{\mu}m$ to $100{\mu}m$. The effective electron distribution along the Ag grids improved the charge transport and transfer at the interface, extending the active reaction sites. Our results demonstrate the applicability of EHD jet printing to the fabrication of efficient current collectors for performance enhancement of SOFCs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.903-906
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• 2009

In this contribution, we designed a serial port interface (SPI) suitable for embedded systems, especially for Bluetooth baseband. Proposed architecture is compatible for the APB bus in AMBA bus architecture. The 8-bit design of the SPI module is in charge of transferring the data and the instructions between the external devices and the coprocessors. We adopted the cyclic redundancy check method for the error correction. Also, we provided the interface for multimedia cards. The designed SPI module was automatically synthesized, placed, and routed. Implementation was performed through the Altera FPGA and well operated at 25MHz clock frequency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1079-1084
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• 2002

Because complex insulation method is used in EHV(extra high voltage) insulation systems, macro Interfaces between two different bulk materials which affect the stability of insulation system exist inevitably. Interface between toughened epoxy and silicone rubber was selected as a interface in EHV insulation systems and tested AC interfacial breakdown properties with variation of many conditions to influence on electrical Properties, such as interfacial pressure, roughness and oil. Specimen was designed to reduce the effect of charge transport from electrode in the process of breakdown and to have the tangential electrical potential with the direction of the interface between epoxy and silicone rubber by using FEM(finite elements method). It could control the interfacial pressure, roughness and viscosity of oil. From the result of this study, it was shown that the interfacial breakdown voltage is improved by increasing interfacial Pressure and oil. In particular, the dielectric strength saturates at certain interracial Pressure level. The decreasing ratio of the interfacial breakdown voltage in non-oiled specimen was increased by the temperature rising, while oiled specimen was not affected by temperature.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.25-29
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• 2000

In this paper, PET(Ployethylene Terephthalate) films with semiconducting and interface layers were investigated, The electrical properties, such as volume resistivity, tan$\delta$(dissipation factor) and breakdown strength at various temperatures were measured. Thermal analysis of PET and semiconducting films were measured and compared by differential scanning calorimeter(DSC) of each film. It is found that the volume resistivity of films(dependence on semiconducting interface layers)and electrical properties of PET films are changed ,Breakdown strength and dissipation factor of PET films with semiconducting layer (PET/S/PET) are decreased more greatly than PET and PET/PET films, due to the increase of charge density of charges at two contacted interfaces between PET and semiconductor, The dissipation factor of each films in increased with temperature,. For PET/S/PET film, is depended on temperature more than PET of PET/PET. However, the breakdown strength is increased up to 85$\^{C}$ and then decreased over 100$\^{C}$The electrical properties of PET films with semiconducting/interface layer are worse than without it It is due to a result of temperature dependency, which deeply affects thermal resistance property of PET film more than semiconducting/interface layers.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• Journal of IKEEE
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• v.18 no.4
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• pp.620-624
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• 2014

In this study, the electrical characteristics of Ni/CNT/$SiO_2$ structures were investigated in order to analyze the mechanism of carbon nanotubes in 4H-SiC MIS device structures. We fabricated 4H-SiC MIS capacitors with or without carbon nanotubes. Carbon nanotubes were dispersed by isopropyl alcohol. The capacitance-voltage (C-V) is characterized at 300 to 500K. The experimental flat-band voltage ($V_{FB}$) shift was positive. Near-interface trapped charge density and oxide trapped charge density values of Ni/CNT/$SiO_2$ structure were less than values of reference samples. With increasing temperature, the flat-band voltage was negative. It has been found that its oxide quality is related to charge carriers or defect states in the interface of 4H-SiC MIS capacitors. Gate characteristics of 4H-SiC MIS capacitors can be controlled by carbon nanotubes between Ni and $SiO_2$.