• Elastomers and Composites
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• v.58 no.1
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• pp.11-16
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• 2023

Electronic skin (e-skin), devices that are mounted on or attached to human skin, have advanced in recent times. Yet, the development of a power supply for e-skin remains a challenge. A stretchable thermoelectric generator is a promising power supply for the e-skin patches. It is a safe and semi-permanent energy harvesting device that uses body heat for generating power. Carbon nanotube (CNT) clays are used in energy-harvesting e-skin patches. In this study, we report improved thermoelectric performance of CNT clays by using chemical doping and physical blending of thermoelectric enhancers. The n-type and p-type thermoelectric enhancers increase electrical conductivity, leading to increased power factors of the thermoelectric CNT clays. The blend of CNT clays and enhancers is intrinsically stretchable up to 50% while maintaining its thermoelectric property.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.364-368
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• 2013

Vibrational energy harvester based on piezoelectricity has been expected to be the dominant energy harvesting technology due to the advantages of high conversion efficiency, light weight and small size, night operation, etc. Its commercialization is just around the corner but the integration with power management electronics should be solved in advance. In this paper, therefore, fully-integrated design environment for piezoelectric energy harvesting systems is presented to assist co-design with the power management electronics. The proposed design environment is capable of analyzing the energy harvester including the package-induced damping effects and simulating the device and its power management electronics simultaneously. When the developed design environment was applied to the fabricated device, the simulated resonant frequency matched well with the experimental result with a difference of 2.97% only. Also, the complex transient response was completed in short simulation time of 3,001 seconds including the displacement distribution over the device geometry. Furthermore, a full-bridge power management circuit was modeled and simulated with the energy harvester simultaneously. Therefore the proposed, fully-integrated design environment is accurate and fast enough for the contribution on successful commercialization of piezoelectric energy harvester.

• International journal of advanced smart convergence
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• v.11 no.4
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• pp.1-9
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• 2022

The recent development of information and communication technology is also affecting audio/video systems used in industry. The audio/video device configuration system changes from analog to digital, and the network-based audio/video system control has the advantage of reducing costs in accordance with system operation. However, audio/video systems released on the market have limitations in that they can only control their own products or can only be performed on specific platforms (Windows, Mac, Linux). This paper is a study on a device (Network Audio Video Integrated Control: NAVICS) that can integrate and control multiple audio / video devices with different functions, and can control digitalized audio / video devices through network and serial communication. As a result of the study, it was confirmed that individual control and integrated control were possible through the protocol provided by each audio/video device by NAVICS, and that even non-experts could easily control the audio/video system. In the future, it is expected that network-based audio/video integrated control technology will become the technical standard for complex audio/video system control.

• Journal of Magnetics
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• v.12 no.1
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• pp.21-26
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• 2007

Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.

• Proceedings of the KSR Conference
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• 2011.05a
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• pp.1550-1555
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• 2011

This paper presents the system interface standard that are associated with additional devices like sensor nodes as well as fire monitoring panel, panic button and emergency call in city railroad environment. Existing fire monitoring panel, panic button and emergency call system is responsible for fire detection and alarm, emergency alarm and communication with the manager. Recently, researches that are associated with NVR-based intelligent integrated surveillance systems and existing alarm system are activated but most of the system is dedicated to it existing. In order to expand devices that is supported other monitoring function, separate device configuration or modification of integrated surveillance system are inevitable. In this study, interface standard between standard controller, integrated command center and each device that facilitate additional expansion of integrated surveillance system and avoid the extra cost is presented.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.975-976
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• 2006

The passive type RFID (Radio Frequency Identification) System using Surface Acoustic Wave (SAW) tag at 900 MHz in the range of more than 1 m was fabricated. To improve interrogation range of the system propose a method to increase isolation between transmitter and receiver. This method using a direct conversion architecture achieves a leakage rejection of 10 dB increased compared with conventional system. Measured interrogation range is more than 1 m.

• The Transactions of the Korean Institute of Power Electronics
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• v.28 no.1
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• pp.39-47
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• 2023

This paper applies a structural technique with uniform parallel switch characteristics in gates and power loops to minimize the ringing and current imbalance that occurs when a general discrete package (TO-247)-based power semiconductor device is operated in parallel. Also, this propose a heat sink integrated switching module with heat sink design flexibility and high power density. The developed heat dissipation-integrated switching module verifies the symmetry of the parasitic inductance of the parallel switch through Q3D by ansys and the validity of the structural technique of the parallel switch using the LLC resonant converter experiment operating at a rated capacity of 7.5 kW.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.12 no.2
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• pp.150-154
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• 2019

In the design of semiconductor integrated circuits, ESD is one of the important issues related to product quality improvement and reliability. In particular, as the process progresses and the thickness of the gate oxide film decreases, ESD is recognized as an important problem of integrated circuit design. Many ESD protection circuits have been studied to solve such ESD problems. In addition, the proposed device can modify the existing SCR structure without adding external circuit to effectively protect the gate oxide of the internal circuit by low trigger voltage, and prevent the undesired latch-up phenomenon in the steady state with high holding voltage. In this paper, SCR-based novel ESD(Electro-Static Discharge) device with the high holding voltage has been proposed. The proposed device has the lower triggering voltage without an external trigger circuitry and the high holding voltage to prevent latch-up phenomenon during the normal condition. Using TCAD simulation results, not only the design factors that influence the holding voltage, but also comparison of conventional ESD protection device(ggNMOS, SCR), are explained. The proposed device was fabricated using 0.35um BCD process and was measured electrical characteristic and robustness. In the result, the proposed device has triggering voltage of 13.1V and holding voltage of 11.4V and HBM 5kV, MM 250V ESD robustness.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1027-1029
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• 2004

In this paper, we have fabricated pentacene thin film transistors (TFTs) using polyvinylphenol (PVP) copolymer and cross-linked PVP as gate insulator on glass and plastic (PET) substrate. Depending on the density of PVP and cross-link material the performance has been changed. We obtained the best device performance with the mobility of 0.32cm2/V${\cdot}$sec and the on/off current ratio of 1.19${\times}$106 for the case of 10wt% PVP copolymer mixed with 5wt% poly (melamine-co-formaldehyde). Additionally using pentacene TFTs with the above PVP gate insulator, we fabricated the integrated circuits including inverter which produced the gain of 9.7.