• Title/Summary/Keyword: insertion loss

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Application of Au-Sn Eutectic Bonding in Hermetic Rf MEMS Wafer Level Packaging (Au-Sn 공정 접합을 이용한 RF MEMS 소자의 Hermetic 웨이퍼 레벨 패키징)

  • Wang Qian;Kim Woonbae;Choa Sung-Hoon;Jung Kyudong;Hwang Junsik;Lee Moonchul;Moon Changyoul;Song Insang
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.3 s.36
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    • pp.197-205
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    • 2005
  • Development of the packaging is one of the critical issues for commercialization of the RF-MEMS devices. RF MEMS package should be designed to have small size, hermetic protection, good RF performance and high reliability. In addition, packaging should be conducted at sufficiently low temperature. In this paper, a low temperature hermetic wafer level packaging scheme for the RF-MEMS devices is presented. For hermetic sealing, Au-Sn eutectic bonding technology at the temperature below $300{\times}C$ is used. Au-Sn multilayer metallization with a square loop of $70{\mu}m$ in width is performed. The electrical feed-through is achieved by the vertical through-hole via filled with electroplated Cu. The size of the MEMS Package is $1mm\times1mm\times700{\mu}m$. By applying $O_2$ plasma ashing and fabrication process optimization, we can achieve the void-free structure within the bonding interface as well as via hole. The shear strength and hermeticity of the package satisfy the requirements of MIL-STD-883F. Any organic gases or contamination are not observed inside the package. The total insertion loss for the packaging is 0.075 dB at 2 GHz. Furthermore, the robustness of the package is demonstrated by observing no performance degradation and physical damage of the package after several reliability tests.

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마이크로파 응용을 위한 고온초전도 필터 서브-시스템

  • 강광용;김현탁;곽민환
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.3
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    • pp.20-40
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    • 2003
  • Since unloaded Q-value of a high-temperature superconductor(HTS) filter is very high, a bandpass filter(BPF) and a lowpass filter(LPF) with an increase of pole numbers can be fabricated without an increase of an insertion loss(IL) ; recently a 70-pole BPF is developed in USA. They have an abrupt skirt property and an excellent attenuation level for out-of band. Moreover, they can be miniaturized when lumped element resonators or the slow-wave characteristic are used. Technology of fabricating a HTS epitaxial film as well as a film of a 4 inch area also makes the planar type filter with a various structure and an enhanced power handling capability possible. Recently, the HTS filter subsystems composed of a planar-type HTS filters, a GaAs-based LNA and a mini-cryocooler are developed. The extended receiver front- end subsystems for mobile radio communications decrease the noise-figure level of the communication system and the frequency interference interacted adjacent bands, and increase the efficiency of frequency and the capacity of communication system. In this paper, theory for developing the HTS filter, its kinds, its design rules, its characteristics are reviewed. The feature of the research and market trends related to the HTS filter systems for the receiver front-end subsystem of mobile base station are surveyed.

Miniaturized Hairpin Tunable Filter with the Single Control Voltage (단일 제어 전원을 갖는 소형화된 헤어핀 튠어블 필터)

  • Myoung, Seong-Sik;Hong, Young-Pyo;Jang, Byung-Jun;Lee, Yong-Shik;Yook, Jong-Gwan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.10
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    • pp.1126-1135
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    • 2007
  • This paper presents the varactor-tuned miniaturized hairpin tunable filter with a single control voltage. The previously proposed miniaturization method is a very straight-forward method to miniaturize a parallel coupled-line filter. In this paper, the miniaturized hairpin tunable filter is proposed with the constant ratio rule of that the capacitances of the each stage always have constant ratio without any dependency to miniaturized electrical length. To show the validity of the proposed method, a 3rd order 0.5 dB ripple Chebyshev fitter with a center frequency of 900 MHz and a fractional bandwidth(FBW) of 10 % was designed and fabricated. The fabricated filter was based on CER-10 substrate of Taconic Inc. with 1SV277 varactor diode of Toshiba Inc. The center frequency of the fabricated filter can be changed from 606 MHz to 944 MHz, 338 MHz with the control voltage from 0.5 V to 4 V. The insertion loss of the proposed filter is increased with the increment of the control voltage, and the filter characteristics are well reserved expect of slight change of the bandwidth with the various control voltage.

Optical True Time-Delay for Planar Phased Array Antennas Composed of a FBG Prism and a Fiber Delay Lines Matrix (FBG 프리즘과 광섬유 지연선로 행렬을 이용한 평면 위상 배열 안테나용 광 실시간 지연선로)

  • Jung, Byung-Min;Shin, Jong-Dug;Kim, Boo-Gyoun
    • Korean Journal of Optics and Photonics
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    • v.17 no.1
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    • pp.7-17
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    • 2006
  • In this paper, we proposed an optical true time-delay (TTD) for planar phased array antennas (PAAs), which is composed of a wavelength-dependent optical true time delay (WDOTTD) followed by a wavelength-independent optical true time delay (WIOTTD). The WDOTTD is a fiber Bragg gratings (FBGs) Prism and the WDOTTD is a fiber delay-lines matrix of which each component consists of a certain length of fiber connected to cross-ports of a 2${\times}$2 MEMS switch. A 10-GHz 2-bit${\times}$4-bit two-dimensional optical TTD has been fabricated by cascading a WDOTTD with a maximum time delay of 810 ps to a WIOTTD of $\pm$50 ps. Time delay and insertion loss for each radiation angle have been measured. Time delay error for the WIOTTD has been measured to be less than $\pm$1 ps. We have also designed a two-dimensional 10-GHz PAA composed of 8${\times}$8 microstrip patch antenna elements driven by the proposed TTD. The radiation patterns of this PAA have been obtained by simulation and analyzed.

Ti:LiNbO3 three-waveguide type traveling-wave optical modulator; outer fed, anti-symmetrical Detuning (Ti:LiNbO3 세 도파로형 진행파 광변조기;바깥입사, 반대칭 Detuning)

  • 이우진;정은주;피중호;김창민
    • Korean Journal of Optics and Photonics
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    • v.15 no.4
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    • pp.375-384
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    • 2004
  • Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

A Reconfigurable Active Array Antenna System with Reconfigurable Power Amplifiers Based on MEMS Switches (MEMS 스위치 기반 재구성 고출력 증폭기를 갖는 재구성 능동 배열 안테나 시스템)

  • Myoung, Seong-Sik;Eom, Soon-Young;Jeon, Soon-Ik;Yook, Jong-Gwan;Wu, Terence;Lim, Kyu-Tae;Laskar, Joy
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.4
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    • pp.381-391
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    • 2010
  • In this paper, a novel frequency reconfigurable active array antenna(RAA) system, which can be reconfigurable for three reconfigurable frequency bands, is proposed by using commercial RF MEMS switches. The MEMS switch shows excellent insertion loss, linearity, as well as isolation. So, the system performance degradation of the reconfigurable system by using MEMS switches can be minimized. The proposed frequency reconfigurable active antenna system is consisted with the noble frequency reconfigurable front-end amplifiers(RFA) with the simple reconfigurable impedance matching circuits(RMC), reconfigurable antenna elements(RAE), as well as a reconfiguration control board(RCB) for MEMS switch control. The proposed RAA system can be reconfigurable for three frequency bands, 850 MHz, 1.9 GHz, and 3.4 GHz, with $2{\times}2$ array of the RAE having broadband printed dipole antenna topology. The validity of the proposed RFA as well as RAA is also presented with the experimental results of the fabricated systems.

An Algorithm for Submarine Passive Sonar Simulator (잠수함 수동소나 시뮬레이터 알고리즘)

  • Jung, Young-Cheol;Kim, Byoung-Uk;An, Sang-Kyum;Seong, Woo-Jae;Lee, Keun-Hwa;Hahn, Joo-Young
    • The Journal of the Acoustical Society of Korea
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    • v.32 no.6
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    • pp.472-483
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    • 2013
  • Actual maritime exercise for improving the capability of submarine sonar operator leads to a lot of cost and constraints. Sonar simulator maximizes the capability of sonar operator and training effect by solving these problems and simulating a realistic battlefield environment. In this study, a passive sonar simulator algorithm is suggested, where the simulator is divided into three modules: maneuvering module, noise source module, and sound propagation module. Maneuvering module is implemented in three-dimensional coordinate system and time interval is set as the rate of vessel changing course. Noise source module consists of target noise, ocean ambient noise, and self noise. Target noise is divided into modulated/unmodulated and narrowband/broadband signals as their frequency characteristics, and they are applied to ship radiated noise level depending on the vessel tonnage and velocity. Ocean ambient noise is simulated depending on the wind noise considering the waveguide effect and other ambient noise. Self noise is also simulated for flow noise and insertion loss of sonar-dome. The sound propagation module is based on ray propagation, where summation of amplitude, phase, and time delay for each eigen-ray is multiplied by target noise in the frequency domain. Finally, simulated results based on various scenarios are in good agreement with generated noise in the real ocean.

The Results of Ender Nailing for the Proximal Humerus Fractures - Radiological Evaluation - (상완골 근위부 골절의 Erlder 정을 이용한 치료 결과-방사선학적 분석 -)

  • Park Jin Soo;Chung Moon Sang;Yoon Kang Sub;Baek Goo Hyun;Lee Ji Ho;Kang Seung Baek;Kim Dong Wook
    • Clinics in Shoulder and Elbow
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    • v.2 no.2
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    • pp.187-198
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    • 1999
  • Purpose: The authors compared the results of Ender nailing for the proximal humerus fractures with those of the conservative methods radiographically. Materials and Method: Nine patients(mean age: 69 years.) received Ender nailing, and the other nine patients, conservative treatments(mean age: 73 years). All fractures were 2 part fractures. The Ender nails were inserted either through posterior elbow approach or transepicondylar approach. A simple Velpeau bandage was applied to the conservative treatment group. The average follow-up was 15 months. Results: The initial status of the anatomical reduction, i.e., the values of the medial shift, overlapping and the varus agulation, were little changed at follow-up radiographs in both the Ender nailing group and the conservative treatment group. There was no significant difference for the status of anatomical reduction between the Ender nailing group and the conservative treatment group. The stability of fixation by Ender nails, i.e., the degree of fanning out of the nails was poor in most cases. Not a few problems/complications happened in cases of Ender nailing group; back­ing out of the nail in three cases, penetration of the nails into the humeral heads in 3, fractures or cracking of the humerus around the nail insertion area in 4 and reduction loss in one. Conclusion: We could not get better results with the use of Ender nail. We use no longer Ender nails for the proximal humerus fractures. Further studies are needed for the better option for the proximal humerus fractures.

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Inductor-less 6~18 GHz 7-Bit 28 dB Variable Attenuator Using 0.18 μm CMOS Technology (0.18 μm CMOS 기반 인덕터를 사용하지 않는 6~18 GHz 7-Bit 28 dB 가변 신호 감쇠기)

  • Na, Yun-Sik;Lee, Sanghoon;Kim, Jaeduk;Lee, Wangyoung;Lee, Changhoon;Lee, Sungho;Seo, Munkyo;Lee, Sung Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.1
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    • pp.60-68
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    • 2016
  • This paper presents a 6~18 GHz 7-bit digital-controlled attenuator. The proposed attenuator is based on switched-T architecture, but no inductor is used for minimum chip size. The designed attenuator was fabricated using $0.18{\mu}m$ CMOS process, and characterized using on-wafer testing setup. The resolution(minimum attenuation step) and the maximum attenuation range of the attenuator were measured to be 0.22 dB and 28 dB, respectively. The measured RMS attenuation error and the RMS phase error for 6~18 GHz were less than 0.26 dB and $3.2^{\circ}$, respectively. The reference state insertion loss was less than 12.4 dB at 6~18 GHz. The measured input and output return losses were better than 9.4 dB over all frequencies and attenuation states. The chip size is $0.11mm^2$ excluding pads.

Design of Active Antenna Diplexers Using UWB Planar Monopole Antennas (초광대역 평면형 모노폴 안테나를 이용한 능동 안테나 다이플렉서의 설계)

  • Kim, Joon-Il;Lee, Won-Taek;Chang, Jin-Woo;Jee, Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.9
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    • pp.1098-1106
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    • 2007
  • This paper presents active antenna diplexers implemented into an ultra-wideband CPW(Coplanar Waveguide) fed monopole antennas. The proposed active antenna diplexer is designed to direct interconnect the output port of a wideband antenna to the input port of two active(HEMT) devices, where the impedance matching conditions of the proposed active integrated antenna are optimized by adjusting CPW(Coplanar Waveguide) feed line to be the length of 1/20 $\lambda_0$(@5.8 GHz) in planar type wideband antenna. The measured bandwidth of the active integrated antenna shows the range from 2.0 GHz to 3.1 GHz and from 5.25 GHz to 5.9 GHz. The measured peak gains are 17.0 dB at 2.4 GHz and 15.0 dB at 5.5 GHz.