• Title/Summary/Keyword: insertion layer

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A Study on the Rx/Tx Switch Module with integrated Low Pass Filter (LPF가 집적화된 Rx/Tx 스위치 모듈에 관한 연구)

  • Song Jae-Sung;Min Bok-Ki;Jeong Soon-Jong;Kim In-Sung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.5
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    • pp.185-189
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    • 2005
  • This paper focuses on the design for Rx/Tx switch module of GSM(global standard mobile) band, characterization of a miniature, low power and dual-band implementation of the front-end switch module with low-pass filer And the effort to make agreement between the simulated design and the measured data for these solutions takes the place through accumulated design and manufacturing data library. We present the design, modeling and measurement of switch module integrating GSM Rx/Tx switching circuit and LPF(low pass filter) on a LTCC(low temperature co-fired ceramic) substrate. For GSM application, insertion and return loss of the low pass filter designed was less than 0.3 dB which was less than 12.7 dB at 900 MHz. The LTCC switch module contained 10 embedded passives and 3 surface mount components integrated on 4.6$\times$4.8$\times$1.2 mm, 6-layer multi-layer integrated circuit. The insertion loss of switch module measured at 900 MHz was 11 dB. In both of the design approach yielded excellent agreement between measured and simulated results.

A study on the integration of Rf switch module using LTCC technology (LTCC 기술을 이용한 RF Switch Module의 집적화에 관한 연구)

  • Kim, Ji-Young;Kim, In-Sung;Min, Bok-Ki;Song, Jae-Sung;Suh, Young-Suk;Nam, Hyo-Duk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.710-713
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    • 2004
  • The design, simulation, modeling and measurement of a low temperature co-fired ceramic (LTCC) RF switch module for GSM applications is presented in this paper. RF switch module is constructed using a Rx/Tx switching circuit and integrated low pass filter. The low pass filter function was designed to operate in th GSM band. Insertion and return loss of the low pass filter were designed less than 0.3 dB and better than 12.7 dB at 900 MHz. The RF switch module contained 10 embedded passives and 3 surface mount components integrated on $4.6{\times}4.8{\times}1.2$ nm, 6-layer multi-layer integrated circuit. The insertion loss of switch module was measured at 900 MHz was 11 dB.

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Effects of thermal annealing of AlN thin films deposited on polycrystalline 3C-SiC buffer layer (다결정 3C-SiC 버퍼층위 증착된 AlN 박막의 열처리 효과)

  • Hong, Hoang-Si;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.112-112
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    • 2009
  • In this study, the effect of a long post-deposition thermal annealing(600 and 1000 $^{\circ}C$) on the surface acoustic wave (SAW) properties of polycrystalline (poly) aluminum-nitride (AlN) thin films grown on a 3C-SiC buffer layer was investigates. The poly-AlN thin films with a (0002) preferred orientation were deposited on the substrates by using a pulsed reactive magnetron sputtering system. Experimental results show that the texture degree of AlN thin film was reduced along the increase in annealing temperature, which caused the decrease in the electromechanical coupling coefficient ($k^2$). The SAW velocity also was decreased slightly by the increase in root mean square (RMS) roughness over annealing temperature. However, the residual stress in films almost was not affect by thermal annealing process due to small lattice mismatch different and similar coefficient temperature expansion (CTE) between AlN and 3C-SiC. After the AlN film annealed at 1000 $^{\circ}C$, the insertion loss of an $IDT/AlN/3C-SiC/SiO_2/Si$ structure (-16.44 dB) was reduced by 8.79 dB in comparison with that of the as-deposited film (-25.23 dB). The improvement in the insertion loss of the film was fined according to the decrease in the grain size. The characteristics of AlN thin films were also evaluated using Fourier transform-infrared spectroscopy (FT-IR) spectra and X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) images.

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Effects of the Freeze-thaw Process on the Strength Characteristics of Soils (IV) -Insulation Performance beneath the Freezed Tested Banking by Inclusion of Insulation Material- (동결-융해작용이 흙의 강도특성에 미치는 영향 (IV) - 단열재를 삽입한 동결성토의 단열거동 -)

  • 유능환;박승범;유영선
    • Magazine of the Korean Society of Agricultural Engineers
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    • v.32 no.3
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    • pp.39-46
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    • 1990
  • This paper was analized the thermal conductivity of polystylene (TENSAR- GEOGRID) embeding into the subbase through frost penetration depth, frost heave, change of bearing capacity, and soil moisture movement due to freezing, thawing and icing actions, and their results were as follows : 1.The change of temperature into the sub-base was much increased by the Tensar-Geogrid insertion, and the frost penetration and frost heave were decreased as the thinner of the insulation thickness but the thawing velocity of melting period was appeared to be faster in case of non-insulated. 2.The frost heave had a close relationship with the thickness of insulations which was reasonably included anti-frost effects. 3.The moisture content during the freezing period of upper layer of the insulation insertion was increased by 15 per cent but it was returned to initial state of the thawing period, and at the down layer temporarily increased by 10 per cent and returned to the original state at once. 4.The insulation was acted as a function of distribution of surcharge, and the settlement of the sub-base was about 1.5 mm under 15 tonnage of load and which was included within the allowable limits. 5.The sliding resistance due to the icing which was induced by the insulation insertion into the sub-base was appeared as more 40 per cent than noninsulation area, so that the insulations should be restricted on the place such as mountains, curved and cross area which were required the braking power under the traffics.

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A STUDY ON THE MARGINAL LEAKAGE OF CLASS II LIGHT CURING COMPOSITE RESIN RESTORATION ACCORDING TO FILLING METHODS (2급와동 광중합 복합레진의 충전방법에 따른 변연누출에 관한 실험적 연구)

  • Kim, Kyung-Hyun;Kwon, Hyuk-Choon
    • Restorative Dentistry and Endodontics
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    • v.18 no.1
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    • pp.55-72
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    • 1993
  • The aim of this study was to compare the marginal leakage of class II light curing composite resin restoration according to filling methods. With using acid etching technique and dentin bonding agent, various methods were suggested to eliminate or reduce the marginal leakage. In this study, class II cavities were prepared in 100 extracted human premolars with cementum margin(1mm below the CEJ) and the teeth were randomly assigned to 5 groups of 20 teeth each. The teeth in group 1, 2, 3 and 4 were restored by direct filling methods using P-50 and Clearfil Photoposterior of 10 teeth each, but the method of insertion of the restorative materials varied with each group. And the teeth in group 5 were restored by inlay method using Kulzer Inlay and CR Inlay. Filling methods are as follows : Group 1 : The composite resin was inserted in one layer in the proximal box and one layer in the occlusal portion. Group 2 : Insertion was in two equally thick horizontal layers in the proximal box. Group 3 : Insertion was in two diagonally placed layers in the proximal box. Group 4 : The composite resin was inserted in the same way as in group 3 except that a glass ionomer liner was first placed on the axial wall and gingival floor. Group 5 : The teeth were restored by Inlay technique using dure cure resin cement. All the teeth were thermocycled, stained with 1 % methylene blue solution, sectioned mesiodistally, and scored for marginal leakage. To compare the marginal leakage, ANOVA and T-test were used in analysis. The following results were obtained : 1. In direct filling methods, there was no significant difference in marginal leakage at both occlusal and cervical margins. 2. In all groups, occlusal margin showed significantly less leakage than cervical margin. 3. In group using glass ionomer liner, there was no significant reduction of marginal leakage at the cervical margin. 4. The group restored by inlay method showed significantly less marginal leakage than groups restored by direct filling methods at both occlusal and gingival margins. 5. There was no significant difference in each group according to filling materials.

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Improved Efficiency by Insertion of TiO2 Interfacial Layer in the Bilayer Solar Cells

  • Xie, Lin;Yoon, Soyeon;Kim, Kyungkon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.432.1-432.1
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    • 2016
  • We demonstrated that the power conversion efficiency (PCE) of bilayer solar cell was significantly enhanced by inserting interfacial layer between the organic bilayer film and the Al electrode. Moreover, the water contact angle shows that the bilayer solar cells suffer from the undesirable surface component which limits the charge transport to the Al electrode. The AFM measurement has revealed that the pre- and post-thermal annealing treatments results in different morphologies of the interfacial layer which is critical for the higher PCE of the bilayer solar cells. Furthermore we have investigated the electrical properties of the bilayer solar cells and obtained insights into the detailed device mechanisms. The transient photovoltage measurements suggests that the significantly enhanced Voc is caused by reducing the recombination at the interface between the organic films and the Al electrode. By inserting the TiO2 layer between the bilayer film and Al electrode, the open circuit voltage (Voc) was increased from 0.37 to 0.66V. Consequently, the power conversion efficiency (PCE) of bilayer solar cells was significantly enhanced from 1.23% to 3.71%. As the results, the TiO2 interfacial layer can be used to form an ohmic contact layer, serveing as a blocking layer to prevent the penetration of the Al, and to reduce the recombination at the interface.

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Impedance spectroscopy analysis of polymer light emitting diodes with the LiF buffer layer at the cathode/organic interface (LiF 음극 버퍼층을 사용한 폴리머의 효율 향상에 관한 임피던스 분석)

  • Kim, H.M.;Jang, K.S.;Yi, J.;Sohn, Sun-Young;Park, Kuen-Hee;Jung, Dong-Geun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.277-278
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    • 2005
  • Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance ($R_c$), parallel resistance ($R_p$) and increment in parallel capacitance ($C_p$).

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Effects of Acupuncture at Varying Depths at the Connecting Point on the Changes of Levels of nNOS, No and Norepinephrine in Rats (수삼양경 락혈의 깊이별 침자가 백서의 nNOS, NO 및 Norepinephrine의 변화에 미치는 영향)

  • Lee, Yumi;Shin, Wook;Lee, Kyoungin;Choi, Donghee;Kim, Mirae;Na, Changsu;Kim, Sunmin;Pyo, Byoungsik;Youn, Daehwan
    • Korean Journal of Acupuncture
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    • v.32 no.4
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    • pp.160-168
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    • 2015
  • Objectives : This study was intended to observe the changes in the expression of neurotransmitters, such as nNOS, NO and NE upon the needle insertion at varying depths at the connecting point. Methods : Needles were inserted into rats, on both left and right sides of the connecting point, including the LI6, SI7 and TE5 acupoints which are three yang meridians of the hand. After insertion, needles were retained for five minutes. Each acupuncture groups were treated acupuncture at each acupoint and at the depths of superficial, middle and deep layer. After the retention, blood was drawn via cardiac puncture, and tissues of each point near meridian vessels were extracted to examine the changes in the expression of nNOS, NO and NE. Results : In terms of the effect in nNO production, there was a significant increase only in the middle and deep layer at SI7 acupoint, but there was no significant change in the expression of NO. Regarding the formation of norepinephrine within tissues, the middle layer on LI6 acupoint, the middle layer and the deep layer on TE5 acupoint showed a significant increase, while production of plasma norepinephrine was significantly decreased at the middle layer and the deep layer on LI6 acupoint and the deep layer on SI7 acupoint. Conclusions : The effect of needles applied at the connecting point of three yang meridians on the activities of nNOS, and NE could be observed, and it can be induced that the effect of needle stimulation on disrupted nervous system can be examined through additional researches based on this one.

Optimization of energy level alignment for efficient organic photovoltaics (에너지 준위 접합 최적화를 통한 유기태양전지 효율 향상법)

  • Lee, Hyunbok
    • Vacuum Magazine
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    • v.2 no.2
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    • pp.12-16
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    • 2015
  • Organic photovoltaics (OPVs) have attracted significant interest in an interdisciplinary research field for the decades as a next-generation photovoltaic device due to their unique advantages. One of requirements for OPVs having high power conversion efficiency is the favorable energy level alignment between the electrode/organic and organic/organic interfaces to manage the exciton dissociation and improve the charge transport. In this review, strategies to enhance the OPV performance by controlling the energy level alignment are discussed. The insertion of an exciton blocking layer leads to the efficient dissociation of photogenerated excitons at the donor/acceptor interface enhancing the short-circuit current density. The choice of a donor having a high ionization energy and an acceptor having a low electron affinity increases the open-circuit voltage. The insertion of an appropriate work function modifier which reduces the charge injection barrier removes the S-kink in current density-voltage characteristics of OPVs and improves the fill factor. This review would give a valuable guide to design the efficient OPV structure.

Characterization of ZnO:Ga Films with Ag Insertion Layer

  • Kim, Min-Yeong;Son, Gyeong-Tae;Kim, Jong-Wan;Kim, Gi-Rim;Im, Dong-Geon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.316-316
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    • 2013
  • GZO/Ag/GZO 다층 투명 전도막은 투명 산화물 전극 사이에 빛이 투과할 수 있는 수준의 매우 얇은 금속을 삽입하여 낮은 면저항과 높은 투과율을 구현하는 기술로 금속의 유연성과 낮은 비저항, 산화물은 높은 투과도와 안정성을 동시에 이용할 수 있는 투명전도막이다. 본 연구에서는 RF 마그네트론 스퍼터와 전자빔 증착을 이용하여 GZO 박막 사이에 Ag 박막을 삽입한 GZO/Ag/GZO 구조의 박막을 제작하였다. Ag 박막의 두께와 공정 압력이 박막에 미치는 영향을 연구하였으며, 급속 열처리에 따른 GZO/Ag/GZO 박막의 특성을 분석하였다. Ag 삽입 박막 두께와 GZO/Ag/GZO 박막의 열처리 온도 최적화를 통하여 $2.2{\times}10-5{\Omega}{\cdot}cm$의 가장 낮은 비저항과 88.9%의 투과율을 나타내었다.

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