• Title/Summary/Keyword: inorganic ion

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Characteristics of $\textrm{LiMn}_{2}\textrm{O}_{4}$ Cathode Material Prepared by Sol-Gel and Solid State Methods for Li Ion Battery (졸-겔법과 고상반응법에 의해 제조된 Li Ion 전지용 $\textrm{LiMn}_{2}\textrm{O}_{4}$ 정극재료 특성)

  • Kim, Guk-Tae;Sim, Yeong-Jae
    • Korean Journal of Materials Research
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    • v.7 no.6
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    • pp.529-535
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    • 1997
  • Li ion전지용 LiMn$_{2}$O$_{4}$분말을 졸-겔법과 고상반응법으로 제조하여 분말의 특성과 전지의 특성을 비교하였다. 졸-겔법에 의해 제조된 LiMn$_{2}$O$_{4}$분말은 고상반응법에 의해 제조된 분말보다 낮은 온도에서 합성이 가능하고, 균질하고 작은 입자들로 구성되었으며, Li stoichiometry가 우수하여 전지의 방전용량이 크나 양이온 혼합도가 높아 전지의 내부저항이 크게 나타났다. 졸-겔법은 높은 Li stoichiometry와 균질한 입자 크기를 갖는 LiMn$_{2}$O$_{4}$분말 제조에 적당한 것으로 생각되며, 전지의 내부저항 문제는 분말의 하소온도와 냉각속도의 조절에 의해 가능할 것으로 판단된다.

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Phenomenal study on the dopant activation behavior in polysilicon thin films doped by non-mass separated ion mass doping technique (비질량 분리 이온 질량 주입법으로 도핑시킨 다결정 박막의 도판트 활성화 거동)

  • Yoon, Jin-Young;Choi, Duck-Kyun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.1
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    • pp.143-150
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    • 1997
  • The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x=1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

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Fabrication of Thin Film Inductors Using Ni-Zn Ferrite Core (Ni-Zn 페라이트 박막을 이용한 박막 인덕터의 제조)

  • Kim, Min-Heung;Yeo, Hwan-Gun;Hwang, Gi-Hyeon;Lee, Dae-Hyeong;Yun, Ui-Jun;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.6 no.1
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    • pp.22-28
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    • 1996
  • 고주파 이동통신의 효용이 증가할수록 고주파 회로에 들어가는 부품들의 소형화가 중요한 과제로 대두되고 있다. 인덕터는 전자회로에 이용되는 주요 부품의 하나이며, 현재 교주파용 소형 인덕터를 박막화하려는 시도가 진행중이다. 본 연구에서 열산화시킨 Si(100)기판위에 성공적으로 박막형 인덕터를 제조하였다. Core 물질로는 ion beam sputtering 법으로 증착한 Ni-Zn 페라이트와 PECVD법으로 증착한 SiO2를 사용하였다. 고온산화분위기의 박막 증착과정을 고려하여 귀금속류인 Au를 전극으로 이용하였으며, life-off법으로 미세회로를 구현하였다. 상하부 전극의 안정적인 연결을 위하여 2차 전극배선 전에 via를 채워넣었다. 제조된 박막 인덕터의 고주파 특성은 network analyzer로 측정한 후 HP사의 Mecrowave Design System으로 분석하였다.

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Gas permeation property of organic-inorganic hybrid membrane made by ion-beam irradiation

  • Kawakami, Hiroyoshi
    • Proceedings of the Membrane Society of Korea Conference
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    • 2004.05a
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    • pp.90-93
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    • 2004
  • In this study, we have reported an organic-inorganic hybrid membrane, which exhibits an asymmetric structure consisted of a carbonized skin layer and a polyimide porous substructure, to synthesize a novel gas separation membrane combining high gas permeability and selectivity. Both the gas permeability and selectivity of the carbonized layer significantly enhanced when compared with those determined in the control polyimide.

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A Study on Electro-Optical Characteristics of the Ion Beam Aligned FFS Cell on the Inorganic Thin Film (무기 박막을 이용한 이온빔 배향 FFS 셀의 전기광학특성에 관한 연구)

  • Hwang, Jeoung-Yeon;Park, Chang-Joon;Jeong, Youn-Hak;Ahn, Han-Jin;Baik, Hong-Koo;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.94-97
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    • 2004
  • In this paper, we investigate fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C:H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film An excellent voltage-transmittance (V-T) and response time curve of the IB-aligned FFS-LCD was observed with oblique IB exposure on the DLC thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IB exposure on the DLC thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

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Reaction Route to the Crystallization of Copper Oxides

  • Chen, Kunfeng;Xue, Dongfeng
    • Applied Science and Convergence Technology
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    • v.23 no.1
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    • pp.14-26
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    • 2014
  • Copper is an important component from coin metal to electronic wire, integrated circuit, and to lithium battery. Copper oxides, mainly including $Cu_2O$ and CuO, are important semiconductors for the wide applications in solar cell, catalysis, lithium-ion battery, and sensor. Due to their low cost, low toxicity, and easy synthesis, copper oxides have received much research interest in recent year. Herein, we review the crystallization of copper oxides by designing various chemical reaction routes, for example, the synthesis of $Cu_2O$ by reduction route, the oxidation of copper to $Cu_2O$ or CuO, the chemical transformation of $Cu_2O$ to CuO, the chemical precipitation of CuO. In the designed reaction system, ligands, pH, inorganic ions, temperature were used to control both chemical reactions and the crystallization processes, which finally determined the phases, morphologies and sizes of copper oxides. Furthermore, copper oxides with different structures as electrode materials for lithium-ion batteries were also reviewed. This review presents a simple route to study the reaction-crystallization-performance relationship of Cu-based materials, which can be extended to other inorganic oxides.

EO performance of IPS cell on the inorganic films surface using DuoPIGatron ion source (유기박막표면에 DuoPIGatron 이온소스를 이용한 IPS 셀의 전기광학 특성)

  • Kim, Byoung-Yong;Hwang, Jeoung-Yeon;Kim, Sang-Hun;Han, Jung-Min;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.04a
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    • pp.89-90
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    • 2006
  • Electro-optical (EO) characteristics of in-plane switching (IPS) cell on the polyimide surface using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the polyimide surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned IPS-cell on poly imide surface ; the stable VT curve in the ion-beam-aligned IPS cell on a poly imide (PI) surface with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned IPS cell on a polyimide (PI) surface with ion beam exposure using new type IB equipment was obtained.

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EO performance of TN cell on the inorganic films surface using DuoPIGatron ion source on NDLC thin film (무기박막표면에 DuoPIGatron 이온소스를 이용한 TN-LCD 셀의 전기광학 특성)

  • Kim, Byoung-Yong;Hwang, Jeoung-Yeon;Kim, Sang-Hun;Han, Jung-Min;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.432-433
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    • 2006
  • Electro-optical (EO) characteristics of twisted nematic (TN) - liquid crystal display (LCD) on the NDLC thin film using obliquely ion beam (IB) exposure as new ion beam (IB) type system (DuoPIGatrion ion source). A good uniform alignment of the nematic liquid crystal (NLC) alignment with the ion beam exposure on the NDLC thin film was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned TN-cell on polyimide surface ; the stable VT curve in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained. and the fast response time in the ion-beam-aligned TN cell on the NDLC thin film with ion beam exposure using new type IB equipment was obtained.

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