• Title/Summary/Keyword: injection-locking

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Design of Subharmonic Injection Locked Oscillator (부고조파를 이용한 X-band 주입 동기 발진기 설계 및 제작)

  • 전영상;이문규;남상욱
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.10 no.5
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    • pp.653-662
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    • 1999
  • In this paper, subharmonically injection locked oscillator(SILO) was designed and measured. SILO with series feedback was designed using Two Signal Method(TSM). The free-running oscillator frequency was 9.4 GHz with 6 dBm output power. In case of injection, the multiplied injected signal locked the free-running frequency. The locked signal output power was higher than any other spurious response at least 40 dB. The locking range was 220MHz (second subharmonic locking), 100 MHz(4th subharmonic locking), and phase noise was -111 dBc/Hz, -104 dBc/Hz at 100kHz offset, respectively.

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The Design of a X-Band Frequency Synthesizer using the Subharmonic Injection Locking Method (Subharmonic Injection Locking 방법을 이용한 X-Band 주파수 합성기 설계)

  • 김지혜;윤상원
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.2
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    • pp.152-158
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    • 2004
  • A low phase noise frequency synthesizer at X-Band which employs the subharmonic injection locking was designed and tested. The designed frequency synthesizer consists of a 1.75 GHz master oscillator - which also operates as a harmonic generator - and a 10.5 GHz slave oscillator. A 1.75 GHz master oscillator based on PLL technique used two transistors - one constitutes the active part of VCO and the other operates as a buffer amplifier as well as harmonic generator. The first stage operates a fixed locked oscillator and using the BJT transistor whose cutoff frequency is 45 GHz, the second stage is designed, operating as a harmonic generator. The 6th harmonic which is produced from the harmonic generator is injected into the following slave oscillator which also behaves as an amplifier having about 45 dB gain. The realized frequency synthesizer has a 7.4 V/49 mA, -0.5 V/4 mA of the low DC power consumption, 4.53 dBm of output power, and a phase noise of -95.09 dBc/Hz and -108.90 dBc/Hz at the 10 kHz and 100 kHz offset frequency, respectively.

Analyses of Spectral Behaviors of Semiconductor Lasers under Weak Optical Injection Locked to External Light Injected

  • Kim, Jung-Tae
    • Journal of information and communication convergence engineering
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    • v.7 no.4
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    • pp.556-560
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    • 2009
  • We have investigated the spectral characteristics of semiconductor lasers locked to the external light injected from a modulated laser. study on FM sideband injection locking has shown that when SLs are locked to the target sidebands of the directly modulated ML, the presence of the unselected sidebands influences the resulting microwave signals. The unselected signals can produce the unwanted beat signals around the desired beat signal, which degrade the overall system performance. This analysis way to generate Giga HZ signal generation.

The Design of a X-Band Frequency Synthesizer using the Subharmonic Injection Locking method (Subharmonic Injection Locking 방법을 이용한 X-Band 주파수 합성기 설계)

  • Kim, Ji-Hye;Yun, Sang-Won
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.269-272
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    • 2003
  • A low phase noise frequency synthesizer at X-Band which employs the subharmonic injection locking was designed and tested. The frequency synthesizer consists of two oscillators - master and slave : A 1.75GHz master oscillator made of PLL synthesizer produces 6th harmonic at 10.5GHz, which excites the following 10.5GHz slave oscillator. The realized frequency synthesizer has a 4.5dBm of output power, and a phase noise of -108dBc/Hz at the 100kHz offset frequency.

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Cost Effective Mutual Injection Locked F-P LD for WDM-PON System (WDM-PON 시스템을 위한 저가격 상호 주입 잠김 F-P LD)

  • Hwang, Ji-Hong;Lee, Hyuek-Jae;Park, Jun-Mo
    • Journal of the Institute of Convergence Signal Processing
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    • v.21 no.4
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    • pp.162-169
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    • 2020
  • In this paper, we attempted a qualitative understanding of mutual injection locking without rigorous mathematics, and analyzed the proposed mutual injection locked light source. Also, a low-cost WDM-PON light source based on mutual injection locking using two unpolarized Fabry-Perot Laser Diodes (F-P LDs), was implemented. The RIN (Relative Intensity Noise) characteristic for the wavelength change of the F-P LD was measured, and when the variable wavelength range was 2.07 nm, it showed a RIN of at least -110 dB/Hz.

Experimental Analyses and Millimeter Wave Signal Generation Using Sideband Injection Locking Method (측파대 광 주입 락킹 기법을 이용한 밀리미터파 신호생성 및 실험적 분석)

  • Kim, Jung-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.12
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    • pp.2769-2774
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    • 2010
  • In this paper, we have proposed sideband injection locking method, heterodyne technique, to generate millimeter-wave signal. Microwave signals in cellular broadband mobile communication networks and distributed networks can favorably be generated and distributed by optical techniques. In principle, these techniques have already been investigated for optical control of phase-array antennas, characterization of photo-detector and phase locking of millimeter-wave oscillators and now being applied to wireless communications. The generation and transmission of millimeter-wave radio signals by optical means is of interest for future pico-cell broadband mobile communication system, especially for systems operating at frequencies of tens of GHz applicable to LMDS. We experimented and analysed the generation of millimeter wave signal.

Mode Selection and Amplification of an Optical Frequency Comb Using Femto-Second Laser Injection-locking Technique (펨토초 레이저 주입잠금법을 이용한 광주파수 빗의 모드 선택과 증폭)

  • Moon, H.S.;Kim, E.B.;Park, S.E.;Park, C.Y.
    • Korean Journal of Optics and Photonics
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    • v.17 no.3
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    • pp.268-272
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    • 2006
  • We have demonstrated the selection and the amplification of the components of an optical frequency comb using femto-second laser injection-locking technique. We used a mode-locked Ti:sapphire laser as a master laser and a single-mode diode laser as a slave laser. After passing through the interference filter with the center wavelength 794.7 nm and the transmittance bandwidth 1.5 nm, the optical frequency comb by mode-locked femto-second laser was injected into the slave laser. The injection-locked slave laser had $3{\sim}4$ multi-mode with the mode spacing 100.5 MHz, whichcorrespond to the repetition rate of a mode-locked Ti:sapphire laser. The power of the modes selected by femto-second laser injection-locking technique was amplified to several thousands times

Modeling of Active Layer and Injection-locking Characteristics in Polarized and Unpolarized Fabry-Perot Laser Diodes (편광 또는 무편광 패브리-페롯 레이저 다이오드의 활성층 및 주입 잠금 동작 특성 모델링)

  • Chung, Youngchul;Yi, Jong Chang;Cho, Ho Sung
    • Korean Journal of Optics and Photonics
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    • v.23 no.1
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    • pp.42-51
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    • 2012
  • In this paper, injection-locking characteristics versus active layer structures in Fabry-Perot laser diodes (FP-LD) are compared. TE and TM gain spectra and peak gains versus carrier density in polarized and unpolarized multiple quantum well structures and in an unpolarized bulk structure are calculated. The calculated gain parameters are applied to a time-domain large-signal model to simulate the injection-locking characteristics. The results show that RIN in unpolarized FD-LDs is about 3 dB lower than that in a polarized FP-LD and that the eye characteristics of the unpolarized FP-LD are much better than those of the polarized FP-LD.

Optical Millimeter-wave Signal Generation using Injection Locking Scheme (광주입 방법을 이용한 밀리미터파 신호 생성)

  • Kim, Jung-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.5
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    • pp.1076-1081
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    • 2003
  • A new technique for generating millimeter-wave signals from a semiconductor laser is presented. The method multiples the signal frequency by using optical injection of short optical pulses at a sub-harmonic of the cavity round-trip frequency to drive the laser oscillating at its resonant frequency. A 32GHz signal is generated using a multisection semiconductor laser operated under continuous wave conditions, by injection optical pulses at a repetition rate equal to the fourth subhamonic(8GHz). The generated millimeter-wave signal exhibits a large submamonic suppression ratio(>17 dB), large frequency detuning range (>300 MHz) low levels of phase-noise(-77.5 dBc/Hz), and large locking (>400 MHz)

A New All-optical Flip-flop Based on Absorption Nulls of an Injection-locked FP-LD

  • Lee, Hyuek Jae
    • Current Optics and Photonics
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    • v.4 no.5
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    • pp.405-410
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    • 2020
  • A new all-optical flip-flop (AOFF) method based on the absorption nulls of an injection-locked Fabry-Perot laser diode (FP-LD) in transverse magnetic (TM) mode is proposed and experimentally demonstrated. For the set and reset operations of the AOFF, injection locking and the destructive minus of beating in transverse electric (TE) mode are used. The absorption nulls on the TM mode are modulated according to the operations, and then non-inverted (Q) and inverted (${\bar{Q}}$) outputs can be obtained simultaneously. Thanks to the use of several absorption nulls, the proposed AOFF can achieve multiple outputs with extinction ratios of more than 15 dB. Even though the experiment is demonstrated at 100 Mbit/s, the results of previous experiments using the injection of a CW holding beam imply that the operation speed can increase to 10 Gbit/s.