• Title/Summary/Keyword: injection-locked

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Characteristics of Injection-Locked High Power Diode Laser (고출력 다이오드 레이저의 주입-잠금 과정 연구)

  • 문한섭;김중복;이호성;양성훈;김점술
    • Korean Journal of Optics and Photonics
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    • v.6 no.3
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    • pp.222-227
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    • 1995
  • A single mode, 100-mW diode laser was injection-locked by the master laser which was spectrally narrowed with Littman-type grating feedback. In the incomplete-injection-locking, we observed that two frequencies were simultaneously generated from the slave laser. The power ratio and frequency shift of two frequency components were proportional to the square of injected laser intensity. When the ratio of the injection intensity to the slave laser intensity was about $10^{-3}$, the injection-locking bandwidth was to be about 1.4 GHz. The bandwidth proportionally increased to the square root of the injection intensity, which was in good agreement with the theoretical predictions. The Iinewidth of the locked-laser was about 2.5 MHz, which was five times as narrow as that of free-running operation. ation.

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A 90-nm CMOS 144 GHz Injection Locked Frequency Divider with Inductive Feedback

  • Seo, Hyo-Gi;Seo, Seung-Woo;Yun, Jong-Won;Rieh, Jae-Sung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.3
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    • pp.190-197
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    • 2011
  • This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90-nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm ${\times}$ 0.69 mm including the DC and RF pads.

Comparativy Characteristics between Microstrip-Line Resonator(HR) and Dielectric Resonator(DR) for Injection-Locked Oscillators (ILOs)

  • Kim, Nam-Young;Kim, Jong-Heon;Hong, Ui-Seok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.239-244
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    • 1997
  • A hair-pin shaped microstrip-line resonator and a dielectric resonator for injection-locked oscillators have been designed and fabricated for the comparative studying of their characteristics. In general, a commonly used dielectric resonator shows lower phase noise value than hair-pin resonator in the free-running mode. In the injection-locked mode, however, a hair-pin resonator is superior to the dielectric resonator; the wider tuning range, the 22% improved locking bandwidth, the lower noise effect, the short term stability, and the higher power level. The planar structure of a hair-pin shaped microstrip-line resonator will be easily applied to monolithic microwave integrated circuits.

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Design and Fabrication of Self-Oscillating Mixer Using Subharmonic Injection Locked Oscillator for 5GHz (주입 동기 방식을 이용한 5GHz 대역 자기발진 주파수 혼합기의 설계 및 제작)

  • 류재종;이주갑;류원열;윤영섭;최현철
    • Proceedings of the IEEK Conference
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    • 2003.11c
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    • pp.86-89
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    • 2003
  • In this paper, Self-Oscillating Mixer is designed by oscillator that was based on a general nonlinear input-output model for the subharmonic injection locked oscillator is analysed. We have designed and fabricated the Self-Oscillating Mixer for 5GHz by proposed subharmonic injection locked oscillator based frequency synthesizer structure that have characteristic of good frequency sensitivity, good phase noise. The design strategy leading to an optimized SILO with regards to its locking range is described and a test SOM circuit is demonstrated a 4dB conversion gain at 280MHz IF frequency from the carrier.

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Comparative Performances between Hair-pin Shaped Microstrip-line Resonator and Dielectric Resonator for Injection Locked Oscillators at 11GHz

  • Lee, Du-Han;Kim, Kye-Hun;Kim, Nam-Youn;Kim, Jong-Heon;Hong, Ui-Seok
    • Journal of Electrical Engineering and information Science
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    • v.2 no.6
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    • pp.171-176
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    • 1997
  • A hair-pin shaped microstrip-line resonator and dielectric resonator for injection-locked oscillators have been designed and fabricated for the comparative studying of their performances. In general, a commonly used dielectric resonator shows lower phase noise value than hair-pin resonator in the free-running mode. In the injection-locked mode, however, a hair-pin resonator is superior to the dielectric resonator, the wider tuning range, the 22% improved locking bandwidth, the lower noise effect, the short term stability, and the higher power level. The planar structure of a hair-pin shaped microstrip-line resonator will be easily applied to monolithic microwave integrated circuits.

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Design of Subharmonic Injection Locked Oscillator (부고조파를 이용한 X-band 주입 동기 발진기 설계 및 제작)

  • 전영상;이문규;남상욱
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.10 no.5
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    • pp.653-662
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    • 1999
  • In this paper, subharmonically injection locked oscillator(SILO) was designed and measured. SILO with series feedback was designed using Two Signal Method(TSM). The free-running oscillator frequency was 9.4 GHz with 6 dBm output power. In case of injection, the multiplied injected signal locked the free-running frequency. The locked signal output power was higher than any other spurious response at least 40 dB. The locking range was 220MHz (second subharmonic locking), 100 MHz(4th subharmonic locking), and phase noise was -111 dBc/Hz, -104 dBc/Hz at 100kHz offset, respectively.

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Amplitude Modulation Response and Linearity Improvement of Directly Modulated Lasers Using Ultra-Strong Injection-Locked Gain-Lever Distributed Bragg Reflector Lasers

  • Sung, Hyuk-Kee;Wu, Ming C
    • Journal of the Optical Society of Korea
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    • v.12 no.4
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    • pp.303-308
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    • 2008
  • Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

Analyses of Encryption Method for Chaos Communication Using Optical Injection Locked Semiconductor Lasers (반도체 레이저의 광 주입을 이용한 혼동 통신망의 암호화 기법 분석)

  • Kim Jung-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.4
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    • pp.811-815
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    • 2005
  • We theoretically studied synchronization of chaotic oscillation in semiconductor lasers with chaotic light injection feed-back induced chaotic light generated from a master semiconductor laser was injected into a solitary slave semiconductor laser. The slave laser subsequently exhibited synchronized chaotic output for a wide parameter range with strong injection and frequency detuning within the injection locking scheme. We also analytically examined chaos synchronization based on a linear stability analysis from the view point of synchronization based on a linear stability analysis from the view point of modulation response of injection locked semiconductor lasers to chaotic light signal.

Effects of the Injected ASE Bandwidth on the Performance of Wavelength-locked Fabry-Perot Laser Diodes

  • Park Kun-Youl;Baik Jin-Serk;Lee Chang-Hee
    • Journal of the Optical Society of Korea
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    • v.9 no.2
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    • pp.45-48
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    • 2005
  • We investigate effects of the injected ASE (Amplified spontaneous emission) bandwidth on the performance of the wavelength-locked Fabry-Perot laser diodes (F-P LDs) under constant injection power density and constant injection power. For the constant injection power density, we can determine the minimum injection bandwidth by the required intensity noise or the bit-error rate (BER) performance. On the other hand, there exists the optimal ASE bandwidth for the constant injection power to minimize the intensity noise.

A New All-optical Flip-flop Based on Absorption Nulls of an Injection-locked FP-LD

  • Lee, Hyuek Jae
    • Current Optics and Photonics
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    • v.4 no.5
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    • pp.405-410
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    • 2020
  • A new all-optical flip-flop (AOFF) method based on the absorption nulls of an injection-locked Fabry-Perot laser diode (FP-LD) in transverse magnetic (TM) mode is proposed and experimentally demonstrated. For the set and reset operations of the AOFF, injection locking and the destructive minus of beating in transverse electric (TE) mode are used. The absorption nulls on the TM mode are modulated according to the operations, and then non-inverted (Q) and inverted (${\bar{Q}}$) outputs can be obtained simultaneously. Thanks to the use of several absorption nulls, the proposed AOFF can achieve multiple outputs with extinction ratios of more than 15 dB. Even though the experiment is demonstrated at 100 Mbit/s, the results of previous experiments using the injection of a CW holding beam imply that the operation speed can increase to 10 Gbit/s.