• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.142-143
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.153-154
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• 2001

• Information and Communications Magazine
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• v.32 no.2
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• pp.109-110
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• 2015

• Journal of the Optical Society of Korea
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• v.9 no.2
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• pp.54-58
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• 2005

A novel mode analysis method and differential mode delay measurement technique for a multimode optical fiber based on optical frequency domain reflectometry has been proposed for the first time. We have used a conventional OFDR with a tunable external cavity laser and a Michelson interferometer. A few-mode optical multimode fiber was prepared to test our proposed measurement technique. The differential mode delay (DMD) of the sample fiber was measured to be 16.58 ps/m with a resolution of 1.5 ps/m. We have also compared the OFDR measurement results with those obtained using a traditional time-domain measurement method.

• Proceedings of the KSRS Conference
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• 2004.10a
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• pp.405-409
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• 2004

We chose the Kushiro wetland in Hokkaido, Japan, as a test site to monitor wetland areas. Synthetic aperture radar (SAR) can carry out continuous observation in any weather conditions, and can therefore be used to observe high humidity areas such as wetlands. We applied multi-parameter SAR data (dual-frequency, multi-polarization, and multi-incidence angle) to monitoring the wetland forest. To find the optimum incidence angle and polarization for monitoring the wetland biomass, a simple backscattering model of wetland vegetation was developed and applied to estimate backscattering coefficients for different biomass and surface conditions.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1575-1577
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• 2002

In this research we propose a method far rain rate estimation by using Doppler spectrum's data of wind profiler. The Doppler spectrum is used to calculate the wind velocity and wind direction. But in this research uses the parameters from Doppler spectrum, it calculates the rain rate. The rain rate estimation in this method will be compared to the obtained rain rate from the surface rain gauge. Two equipments are installed in the same area. The correlation coefficient between rain rate measuring method is 0.65.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.249-250
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• 2008

We report on the visible photoluminescence of the Tb/Yb co-doped alumino-germano-silicate fibers for visible fiber laser application. By changing the concentration ratios of $Tb^{3+}$ to $Yb^{3+}$, we optimized the solution doping conditions and obtained the highest emission efficiency at 546nm. The luminescence intensity at 546nm was found to increase with the relative increase of $Tb^{3+}$ ions.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.282-282
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• 2006

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.523-523
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• 2006

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.63-68
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• 2003

The DC and RF characteristics of $In_{0.5}Ga_{0.5}P/In_{0.22}Ga_{0.78}As/GaAs$ p-HEMTs with a gate oxide layer of various thicknesses ($50{\;}{\AA},{\;}300{\;}{\AA}$) were investigated and compared with those of a Schottky-gate p-HEMT without the gate oxide layer. A prominent improvement in the breakdown voltage characteristics were observed for a p-HEMT having a gate oxide layer, which was implemented by using a liquid phase oxidation technique. The on-state breakdown voltage of the p-HEMT having the oxide layer of $50{\;}{\AA}$was ~2.3 times greater than that of a Schottky-gate p-HEMT. However, the p-HEMT having the gate oxide layer of $300{\;}{\AA}$ suffered from a poor gate-control capability due to the drain induced barrier lowering (DIBL) resulting from the thick gate oxide inspite of the lower gate leakage current and the higher on-state breakdown voltage. The results for a primitive p-HEMT having the gate oxide layer without any optimization of the structure and the process indicate the potential of p-HEMT having the gate oxide layer for high-power applications.