• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.10
• /
• pp.840-846
• /
• 2000

In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss Al$_2$O$_3$core material were investigated. The size of the chip inductors fabricated in this work were 15$\times$10$\times$0.7㎣, 2.1$\times$1.5$\times$10㎣, and 2.4$\times$2.0$\times$1.4㎣ and copper (Cu) wire with 40 ㎛ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured suing an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 33 to 100nH and exhibit the self-resonant frequency (SRF) of .26 to 1.1 GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 60 to 80 in the frequency range of 300 MHz to 1.1 GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully. It is suggested that the thin film-type inductor is necessary to fabricate the smaller size inductors at the expence of inductance and quality factor values.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.10a
• /
• pp.389-393
• /
• 2003

This paper presents circuit modeling and characterization of silicon-based on-chip integrated inductors in Giga Hertz range for wireless communication products. We compare several different designs of on-chip inductors for self-resonant frequency and quality factor. The measurement data could be used as a design guide for manufacturing practical spiral inductors for wireless applications. We provide the equivalent inductor circuit parameters from the actual measurement data.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.785-788
• /
• 2005

In this study, micro-scale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was $1.0{\times}0.5{\times}0.5mm^3$ The material and shape of the core were 96% $Al_2O_3$ and I-type. The material and number of turn of coil were copper (Cu) and 6. The diameter ($40{\mu}m$) of coil and length (0.35mm) of solenoid were determined by a Maxwell three-dimensional field simulator to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 at 250MHz, and show results comparable to those measured for the inductors prepared by CoilCraftTm that is one of the best chip inductor company in the world. The simulated data predicted the high-frequency data of the Land Q of the inductors developed well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.3
• /
• pp.340-347
• /
• 2004

Ultra-small size, high-performance, solenoid-type RF chip inductors utilizing low-loss A1$_2$O$_3$ core materials were investigated. The dimensions of the RF chip inductors fabricated were 1.0mm${\times}$0.5mm${\times}$0.5mm and copper coils were used. The materials (96％ A1$_2$O$_3$) and shape (I-type) of the core, the diameters (40${\mu}{\textrm}{m}$) and position (middle) of the coil, and the lengths (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. The high-frequency characteristics of the inductance (L) and quality-factor (Q) of the developed inductors were measured using a RF impedance/material analyzer (E4991A with E16197A test fixture). The developed inductors exhibit an inductance of 11 to 11.3nH and a qualify factor of 22.3 to 65.7 over the frequency ranges of 250 MHz to 1.7 GHz, and show results comparable to those measured for the inductors prepared by Coilcraft$^{TM}$. The simulated data described the high-frequency data of the L and Q of the fabricated inductors well.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.11
• /
• pp.501-507
• /
• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. 96% $Al_2$ $O_3$and I-type were used as the material and shape of the core, respectively. The copper (Cu) wire with 6 turns was employed as the coils. The diameter (40${\mu}{\textrm}{m}$) and position (middle) of the coil and the length (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 to 50 over the frequency ranges of 250MHz to l GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ . The simulated data predicted the high-frequency data of the L and Q of the inductors developed well.l.

• Proceedings of the KIEE Conference
• /
• 2004.07c
• /
• pp.2105-2107
• /
• 2004

In this study, Spiral inductors on the $SiO_2$/Si(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60 ${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays. Also, We recommend that the reasonable Q-factors, spec's turns and thickness of the coil for inductors cab be set to be ideal condition.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.39 no.12
• /
• pp.559-565
• /
• 2002

Today, because a quality factor of the inductor fabricated on silicon substrate for RFIC is under 12, the realization of inductor haying high-Q is essential. In this paper, two inductors having improved Q-factor are proposed and fabricated using a bondwire on silicon substrate. Also for the PGS is applied to the same inductors, four inductors are fabricated finally The bondwire Inductors have the relatively low conductor loss due to wide cross-section area and they can reduce the parastic capacitance very much because they are located in the air. Simulation and measurement results show that the proposed inductors have much more improved Q-factor, 15, than a conventional spiral inductor at 1.5 GHz. Because of the use of an automatic bonding machine, we can fabricate the high - Q inductors very easily, repeatedly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.912-915
• /
• 2004

Inductors material utilized in the downsizing passive devices and Rf components requires the physical and electrical properties at given area such as inductors thickness reduction, inductance and q-factor increase, low leakage current and thermal stability. In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of $2{\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to $60{\mu}m$ and from 20 to $70{\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.8
• /
• pp.641-644
• /
• 2009

We have studied on the microwave characteristics for the meander type inductors on the MgO substrates and $Al_2O_3$ substrates by employing 3-D high frequency simulation, respectively. Proper designs of meander type inductors were proposed and confirmed through the high frequency simulations, 5, 7, 9, 11, and 13 turns meander type inductors have been choose to analyze the electrical properties for the microwave passive component applications. The Al top electrodes have 282 nm length, 45 nm width, 100 nm thickness and 15 nm gap. The simulations were carried out from 50 MHz to 30 GHz, Frequency dependent inductances and quality factor were calculated by employing the equivalent circuit model of meander type inductors. The self resonances frequency of meander type inductor were shifted from high frequency to low frequency range as the number of the turn of inductors was increased. From the microwave simulations, the inductances and quality factors of meander type inductors were extracted through the scattering parameter.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2003.11a
• /
• pp.178-182
• /
• 2003

This paper presents the embedded inductors in PCB (Printed Circuit Board) for PAM(Power Amplifier Module) of mobile terminations. The inductors are designed, simulated, and compared to conventional chip inductors. The Quality factor(Q) and self-resonance frequency(SRF) of the inductors are evaluated. The quality factors of the inductors are two times higher than those of the chip inductors, and the self-resonance frequency is 1.3 times higher than those of chip inductors at the inductance of 2.7 nH and 3.3 nH respectively.