• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.741-746
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• 2009

Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1496-1499
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• 2009

A diode-pumped Nd:$YVO_4$ laser was used to obtain indium tin oxide (ITO) patterns on glass substrate with various overlapping rates. The results showed that the overlapping rate of laser beam influences on the edge structure of ITO pattern and the surface roughness of ablated groove bottom. At a laser repetition rate of 40 kHz, the optimized condition of overlapping rate was 75 %.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.421-425
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• 2013

The effect of pretreatment on indium-tin oxide (ITO) electrodes has been rarely studied, although that on metal and carbon electrodes has been enormously done. The electrochemical and surface properties of ITO electrodes are investigated after 6 different pretreatments. The electrochemical behaviors for oxygen reduction, $Ru(NH_3){_6}^{3+}$ reduction, $Fe(CN){_6}^{3-}$ reduction, and p-hydroquinone oxidation are compared, and the surface roughness, hydrophilicity, and surface chemical composition are also compared. Oxygen reduction, $Fe(CN){_6}^{3-}$ reduction, and p-hydroquinone oxidation are highly affected by the type of the pretreatment, whereas $Ru(NH_3){_6}^{3+}$ reduction is almost independent of it. Interestingly, oxygen reduction is significantly suppressed by the treatment in an HCl solution. The changes in surface roughness and composition are not high after each pretreatment, but the change in contact angle is substantial in some pretreatments.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.316-319
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• 2001

Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 cd/㎡ at 8 V

• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.563-567
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• 2000

We presented the etch results of indium-tin oxide thin films by using SF$_{6}$/O$_2$gas electron cyclotron resonance plasma and conducted X-ray phtoelectron spectroscopy and quadrupole mass spectrometer analyses for the etch characteristics. The etch rate of the films was greatly dependent on that of oxygen which was the major constituent element of the films. The oxygen was removed by the forms like $O_2$or SOF$_2$. We examined the ratio of atomic content of O and In and the change of this ratio was related to the removal rate of InF$_{x}$ and the S-metal bonding.ing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2404-2406
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• 2005

본 연구에서는 전기촉매제를 사용하여 증가된 감도를 가지는 검출 시스템을 제작하였다. 전극과 검출물질 사이의 산화환원반응을 촉진시키기 위한 물질로 Prussian blue (PB)를 indium tin oxide (ITO) 전극에 전착하였다. 본 실험에서는 분석물질의 이동 및 분리를 위하여 모세관 전기영동방법을 사용하였으며 측정방법은 전류량법을 사용하였다. 전착된 PB 박막의 특성은 원자 현미경으로 분석하여 0.1V, 3min의 전착조건으로 최적화하였다. 전기 촉매제로써의 PB의 특성을 확인하기 위하여 ITO 전극만을 사용한 전기화학적 검출기와 비교하였으며 본 연구에서 제안된 검출기의 감도가 20배정도 더 좋다는 것을 확인하였다.

• 대한전자공학회논문지SD
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• 제39권9호
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• pp.1-10
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• 2002

유기 발광 다이오드를 위한 indium oxide (ITO) 기판을 여러 가지로 방법으로 표면처리를 하고, 이에 따른 atomic force microscopy (AFM)에 의한 morphology의 변화와 표면에서 변화된 원소들의 조성비를 Auger electron spectroscopy (AES)분석에 의하여 조사하였다. 또한 이 기판을 사용하여 초고진공분자선 증착방법에 의하여 유기 발광다이오드를 제작하고 그 특성을 조사하였다. 그 결과 산소플라즈마으로 표면 처리한 ITO 기판 위에 제조된 organic light-emitting diode (OLED)소자의 특성이 향상되었다. 그것은 AES의 분석에 의하면 ITO 표면의 오염된 탄소가 제거되고 ITO의 일함수가 증가되어 정공이 유기물 층으로 용이하게 주입한 결과로 판단된다.

• 대한치과기공학회지
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• 제23권1호
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• pp.31-43
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• 2001

This study was performed to observe the micro-structure change of surface, behavior of oxide change of element, the component transformation of the alloy and the bonding strength between the porcelain interface in order to investigate effects of indium, tin on interfacial properties of porcelain fused to low gold alloy. Hardness of castings was measured with a micro-Vicker's hardness tester. The compositional change of the surface of heat-treated specimen was analyzed with an EDS and an EPMA. The interfacial shear bonding strength between alloy specimen and fused porcelain was measured with a mechanical testing system(MTS 858.20). The results were as follows: 1) The hardness value of alloy increased as increasing amount of indium addition. 2) The formation of oxidation increased as increasing indium and tin contents after heat treatment. 3) Diffusion of indium and tin elements increased as increasing indium and tin contents in metal-porcelain surface after porcelain fused to metal firing. 4) The most interfacial shear bonding strength was increased as increasing a composition of adding elements, and a heat-treatment time, and an oxygen partial pressure. From the results of this study it was found that the addition of alloying elements such as indium and tin increase hardness of as-cast alloy, produce surface oxide layer of adding elements by heat-treatment which may improve interfacial bonding strength between alloy and porcelain.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.59-62
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• 2013

At an infra-red (IR) wavelength of 1,064 nm, a diode-pumped Q-switched $Nd:YVO_4$ laser was used for the direct patterning of various transparent conductive oxide (TCO) thin films on glass substrate. With various laser beam conditions, the laser ablation results showed that the indium tin oxide (ITO) film was removed completely. In contrast, zinc oxide (ZnO) film was not etched for any laser beam conditions and indium gallium zinc oxide (IGZO) was only ablated with a low scanning speed. The difference in laser ablation is thought to be due to the crystal structures and the coefficient of thermal expansion (CTE) of ITO, IGZO, and ZnO. The width of the laser-patterned grooves was dependent on the film materials, the repetition rate, and the scanning speed of the laser beam.

• 한국분말재료학회지
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• 제11권6호
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• pp.467-471
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• 2004

In order to fabricate a high density sintered body of ITO, nano-sized ITO powders were synthesized by coprecipitation methods. Aqueous solutions of indium and tin salts were mixed and coprecipitated by changing their pH. Coprecipitated ITO powders possessed 20-30 nm crystallite size and a relatively high BET value ($35m^2/g$), however, aggregation of particles were occurred. Therefore, a novel recrystallization technique was applied in order to eliminate the aggregates. The recrystallized ITO material consists of a little bit larger needlelike crystals, $20nm{\times}80nm$, and it possesses a higher BET value $(57m^{2}/g)$ compared to the plain coprecipitated material $(35m^{2}/g)$. Metastable phase formation and higher content of aggregated particles were observed in the coprecipitated materials. Densification was 95% to 98% complete after 5 hour sintering at $1500^{\circ}C$ for the recrystallized powders while densities of the coprecipitated powders were below 75%.