• Title/Summary/Keyword: in-situ transmission electron microscope

Search Result 24, Processing Time 0.035 seconds

Dedicated preparation for in situ transmission electron microscope tensile testing of exfoliated graphene

  • Kim, Kangsik;Yoon, Jong Chan;Kim, Jaemin;Kim, Jung Hwa;Lee, Suk Woo;Yoon, Aram;Lee, Zonghoon
    • Applied Microscopy
    • /
    • v.49
    • /
    • pp.3.1-3.7
    • /
    • 2019
  • Graphene, which is one of the most promising materials for its state-of-the-art applications, has received extensive attention because of its superior mechanical properties. However, there is little experimental evidence related to the mechanical properties of graphene at the atomic level because of the challenges associated with transferring atomically-thin two-dimensional (2D) materials onto microelectromechanical systems (MEMS) devices. In this study, we show successful dry transfer with a gel material of a stable, clean, and free-standing exfoliated graphene film onto a push-to-pull (PTP) device, which is a MEMS device used for uniaxial tensile testing in in situ transmission electron microscopy (TEM). Through the results of optical microscopy, Raman spectroscopy, and TEM, we demonstrate high quality exfoliated graphene on the PTP device. Finally, the stress-strain results corresponding to propagating cracks in folded graphene were simultaneously obtained during the tensile tests in TEM. The zigzag and armchair edges of graphene confirmed that the fracture occurred in association with the hexagonal lattice structure of graphene while the tensile testing. In the wake of the results, we envision the dedicated preparation and in situ TEM tensile experiments advance the understanding of the relationship between the mechanical properties and structural characteristics of 2D materials.

Low-Temperature Si and SiGe Epitaxial Growth by Ultrahigh Vacuum Electron Cyclotron Resonance Chemical Vapor Deposition (UHV-ECRCVD)

  • Hwang, Ki-Hyun;Joo, Sung-Jae;Park, Jin-Won;Euijoon Yoon;Hwang, Seok-Hee;Whang, Ki-Woong;Park, Young-June
    • Proceedings of the Korea Association of Crystal Growth Conference
    • /
    • 1996.06a
    • /
    • pp.422-448
    • /
    • 1996
  • Low-temperature epitaxial growth of Si and SiGe layers of Si is one of the important processes for the fabrication of the high-speed Si-based heterostructure devices such as heterojunction bipolar transistors. Low-temperature growth ensures the abrupt compositional and doping concentration profiles for future novel devices. Especially in SiGe epitaxy, low-temperature growth is a prerequisite for two-dimensional growth mode for the growth of thin, uniform layers. UHV-ECRCVD is a new growth technique for Si and SiGe epilayers and it is possible to grow epilayers at even lower temperatures than conventional CVD's. SiH and GeH and dopant gases are dissociated by an ECR plasma in an ultrahigh vacuum growth chamber. In situ hydrogen plasma cleaning of the Si native oxide before the epitaxial growth is successfully developed in UHV-ECRCVD. Structural quality of the epilayers are examined by reflection high energy electron diffraction, transmission electron microscopy, Nomarski microscope and atomic force microscope. Device-quality Si and SiGe epilayers are successfully grown at temperatures lower than 600℃ after proper optimization of process parameters such as temperature, total pressure, partial pressures of input gases, plasma power, and substrate dc bias. Dopant incorporation and activation for B in Si and SiGe are studied by secondary ion mass spectrometry and spreading resistance profilometry. Silicon p-n homojunction diodes are fabricated from in situ doped Si layers. I-V characteristics of the diodes shows that the ideality factor is 1.2, implying that the low-temperature silicon epilayers grown by UHV-ECRCVD is truly of device-quality.

  • PDF

Study of Incipient Soot Particles with Measuring Methodologies (입자 측정방법을 통한 초기 수트입자 연구)

  • Lee Eui Ju
    • Journal of the Korean Society of Visualization
    • /
    • v.2 no.1
    • /
    • pp.12-17
    • /
    • 2004
  • The physical characteristics of soot near the soot inception point were investigated with various measurements. In-situ measurements of particle size and volume fraction were introduced based on time resolved laser-induced incandescence (TIRE-LII) and laser-induced ion mobility (LIIM). The one has more convenience and accuracy than conventional LII technique and the other works best for particle sizes of a few nanometers at high concentrations in a uniform concentration field. A complementary ex-situ measurement of particle size is nano differential mobility analyzer (Nano-DMA), which recently developed for measuring particle sizes between 2nm and 100nm and provides high-resolution size information for early soot. Particles will be also collected on transmission electron microscope (TEM) grids using rapid thermophoretic sampling and analyzed for morphology. These measurements will allow fresh and original insight into the characterizing soot inception process. The measured physical properties of incipient soot will clarify the controlling growth mechanism combined with chemical ones, and the dominant mechanism for soot modeling can be deduced from the information.

  • PDF

In-situ rf treatment of multiwall carbon nanotube with various post techniques for enhanced field emission

  • Ahn, Kyoung-Soo;Kim, Jun-Sik;Kim, Ji-Hoon;Kim, Chae-Ok;Hong, Jin-Pyo
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2003.07a
    • /
    • pp.859-862
    • /
    • 2003
  • Well-aligned multiwall carbon nanotubes (MWCNTs) were prepared at low temperature of 400 $^{\circ}C$ by utilizing a radio frequency plasma-enhanced chemical vapor deposition (rf-PECVD) system. The MWCNTs were treated by an external rf plasma source and an ultra-violet laser in order to modify structural defect of carbon nanotube and to ablate possible contamination on carbon nanotube surface. Structural properties of carbon nanotubes were investigated by using a scanning electron microscopy (SEM), Raman spectroscopy, Fourier transformer Infrared spectroscopy (FTIR) and transmission electron microscope (TEM). In addition, the emission properties of the MWNTs were measured for the application of field emission display (FED) in near future. Various post treatments were found to improve the field emission property of carbon nanotubes.

  • PDF

Measuring the Tensile Properties of the Nanostructure Using a Force Sensor (힘센서를 이용한 나노구조체의 인장물성 측정)

  • Jeon, Sang-Gu;Jang, Hoon-Sik;Kwon, Oh-Heon;Nahm, Seung-Hoon
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.34 no.2
    • /
    • pp.211-217
    • /
    • 2010
  • It is important to measure the mechanical properties of nanostructures because they are required to determine the lifetime and reliability of nanodevices developed for various fields. In this study, tensile tests for a multi-walled carbon nanotube (MWCNT) and a ZnO nanorod were performed in a scanning electron microscope (SEM). The force sensor was a cantilever type and was mounted in front of a nanomanipulator placed in the chamber. The nanomanipulator was controlled using a joystick and personal computer. The nanostructures dispersed on the cut area of a transmission electron microscope (TEM) grid were gripped with the force sensor by exposing an electron beam in the SEM; the tensile tests were the performed. The in situ tensile loads of the nanostructure were obtained. After the tensile test, the cross-sectional areas of the nanostructures were observed by TEM and SEM. Based on the TEM and SEM results, the elastic modulus of the MWCNT and ZnO nanorod were calculated to be 0.98 TPa and 55.85 GPa, respectively.

Nano-scale Observation of Nanomaterials and Nano-devices

  • An, Chi-Won
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2012.05a
    • /
    • pp.86.1-86.1
    • /
    • 2012
  • 나노재료와 나노기술의 연구개발 지원을 위하여 국가나노인프라인 나노종합팹센터에서 개발되고 있는 나노재료/나노현상의 실시간 관찰을 위한 SiN membrane chip 기술 및 나노그래핀 기반구축에 대한 최근 결과와 향후계획을 소개하고자 한다. 나노재료의 합성, 배열, 구조 등의 실시간 관찰을 가능하게 하기 위하여 제작된SiN membrane chip은 투과전자현미경(transmission electron microscope, TEM)에서 투명한 기판으로, 그 위에 나노재료를 합성, 배열하고 원하는 모양의 전극을 형성하여 나노재료 및 나노소자의 온도변화 및 전기적 특성 측정 등이 가능하다. 이러한 기술은 Ag, Sn, Cu 등 nano-cluster의 percolation 소자, SiN 및 Graphene 나노기공 소자, SiGe, BiTe, Si, ZnO 나노선 및 CNT의 내부구조변화, 상변화 등 다양한 나노재료/나노소자의 나노현상 관찰 및 해석에 적용되었다.

  • PDF

Antifungal Activity of Green and Chemically Synthesized ZnO Nanoparticles against Alternaria citri, the Causal Agent Citrus Black Rot

  • Hazem S. Elshafie;Ali Osman;Mahmoud M El-Saber;Ippolito Camele ;Entsar Abbas
    • The Plant Pathology Journal
    • /
    • v.39 no.3
    • /
    • pp.265-274
    • /
    • 2023
  • Citrus black rot is a serious disease of citrus plants caused by Alternaria citri. The current study aimed to synthesize zinc oxide nanoparticles (ZnO-NPs) by chemically or green method and investigate their antifungal activity against A. citri. The sizes of synthesized as measured by transmission electron microscope of ZnO-NPs were 88 and 65 nm for chemical and green methods, respectively. The studied prepared ZnO-NPs were applied, in vitro and in situ, at different concentrations (500, 1,000, and 2,000 ㎍/ml) in post-harvest treatment on navel orange fruits to verify the possible control effect against A. citri. Results of in vitro assay demonstrated that, at concentration 2,000 ㎍/ml, the green ZnO-NPs was able to inhibit about 61% of the fungal growth followed by 52% of chemical ZnO-NPs. In addition, scanning electron microscopy of A. citri treated in vitro with green ZnO-NPs showed swelling and deformation of conidia. Results showed also that, using a chemically and green ZnO-NPs at 2,000 ㎍/ml in situ in post-harvest treatment of orange, artificially-infected with A. citri, has reduced the disease severity to 6.92% and 9.23%, respectively, compared to 23.84% of positive control (non-treated fruits) after 20 days of storage. The out findings of this study may contribute to the development of a natural, effective, and eco-friendly strategy for eradicating harmful phytopathogenic fungi.

In situ UHV TEM studies on nanobubbles in graphene liquid cells

  • Shin, Dongha;Park, Jong Bo;Kim, Yong-Jin;Kim, Sang Jin;Kang, Jin Hyoun;Lee, Bora;Cho, Sung-Pyo;Novoselov, Konstantin S.;Hong, Byung Hee
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.102-102
    • /
    • 2016
  • Water, which is most abundant in Earth surface and very closely related to all forms of living organisms, has a simple molecular structure but exhibits very unique physical and chemical properties. Even though tremendous effort has been paid to understand this nature's core substance, there amazingly still lefts much room for scientist to explore its novel behaviors. Especially, as the scale goes down to nano-regime, water shows extraordinary properties that are not observable in bulk state. One of such interesting features is the formation of nanoscale bubbles showing unusual long-term stability. Nanobubbles can be spontaneously formed in water on hydrophobic surface or by decompression of gas-saturated liquid. In addition, the nanobubbles can be generated during electrochemical reaction at normal hydrogen electrode (NHE), which possibly distorts the standard reduction potential at NHE as the surface nanobubble screens the reaction with electrolyte solution. However, the real-time evolution of these nanobubbles has been hardly studied owing to the lack of proper imaging tools in liquid phase at nanoscale. Here we demonstrate, for the first time, that the behaviors of nanobubbles can be visualized by in situ transmission electron microscope (TEM), utilizing graphene as liquid cell membrane. The results indicate that there is a critical radius that determines the long-term stability of nanobubbles. In addition, we find two different pathways of nanobubble growth: i) Ostwald ripening of large and small nanobubbles and ii) coalescence of similar-sized nanobubbles. We also observe that the nucleation and growth of nanoparticles and the self-assembly of biomolecules are catalyzed at the nanobubble interface. Our finding is expected to provide a deeper insight to understand unusual chemical, biological and environmental phenomena where nanoscale gas-state is involved.

  • PDF

Direct Imaging of Polarization-induced Charge Distribution and Domain Switching using TEM

  • O, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.08a
    • /
    • pp.99-99
    • /
    • 2013
  • In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

  • PDF

An Experimental Study on Composition Characteristics of $SiO_2/TiO_2$ Multicomponent Particle in Coflow Diffusion Flame (화염중 발생하는 $SiO_2/TiO_2$ 다성분입자의 조성특성에 관한 실험적 연구)

  • Kim, Tae-Oh;Suh, Jeong-Soo;Choi, Man-Soo
    • Proceedings of the KSME Conference
    • /
    • 2000.04b
    • /
    • pp.441-446
    • /
    • 2000
  • Chemical compositions of monodisperse $SiO_2/TiO_2$ multicomponent aggregates were measured for different heights from the burner surface and different mobility diameters of aggregates. $SiO_2/TiO_2$ multicomponent particles were generated in a hydrogen/oxygen coflow diffusion flame from two sets of precursors: TTIP (titanium tetraisopropoxide), TEOS(tetraethylorthosilicate). To maintain 1:1 mole ratio of TTIP:TEOS vapor theoretically, flow rate of carrier gas $N_2$ was fixed at 0.61pm for TTIP, at 0.11pm for TEOS. In situ sampling probe was used to supply particles into differential mobility analyzer(DMA) which was calibrated with using commercial DMA(TSI 3071A) and classifying monodisperse multicomponent particles. Classified particles were collected with electrophoretic collector. The distributions of composition from particle to particle were determined using EDS (energy dispersive spectrometry) coupled with TEM (transmission electron microscope). The chemical (atomic) compositions of classified monodisperse particle were obtained for different heights; z=40mm, 60mm, 80mm. The results suggested that the atomic composition of $SiO_2$ decreased with the height from burner surface and the composition of $SiO_2$ and $TiO_2$ approached to the value of 1 to 1 in far downstream. It is also found that the composition of $SiO_2$ decreases as the mobility diameter of aggregate increases.

  • PDF